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Significant construction and demolition waste (CDW) is produced by many useless concrete buildings, bridges, airports, highways, railways, industrial mining, etc. The rising need for new construction has increased the use of natural materials, impacting the ecosystem and incurring high costs from mining natural aggregates (NA) and processing CDW. The concept and implementation of recycled aggregate concrete (RAC) offer a sustainable solution for the concrete industry. Crushed concrete, made from recycled concrete, can be used instead of natural aggregates in structural concrete. This sustainable byproduct, recycled concrete aggregate (RCA), has the potential to replace natural aggregate. This paper examines the benefits of RAC from economic, social, environmental, and technological perspectives and discusses the replacement ratio (RR)—the weight percentage of natural aggregate replaced by recycled aggregate—which is crucial to RAC performance. A collection of used data on mechanical properties and economic performance, national specifications, standards, and guidelines is reviewed to determine the optimal replacement ratio for RCA, which was found to be 20%. Finally, we discuss the challenges and future of using RAC in structural concrete.

As a promising candidate for high-density data storage and neuromorphic computing, cross-point memory arrays provide a platform to overcome the von Neumann bottleneck and accelerate neural network computation. In order to suppress the sneak-path current problem that limits their scalability and read accuracy, a two-terminal selector can be integrated at each cross-point to form the one-selector-one-memristor (1S1R) stack. In this work, we demonstrate a CuAg alloy-based, thermally stable and electroforming-free selector device with tunable threshold voltage and over 7 orders of magnitude ON/OFF ratio. A vertically stacked 64 × 64 1S1R cross-point array is further implemented by integrating the selector with SiO 2 -based memristors. The 1S1R devices exhibit extremely low leakage currents and proper switching characteristics, which are suitable for both storage class memory and synaptic weight storage. Finally, a selector-based leaky integrate-and-fire neuron is designed and experimentally implemented, which expands the application prospect of CuAg alloy selectors from synapses to neurons. Designing efficient selector devices remains a challenge. Here, the authors propose a CuAg alloy-based selector with excellent ON/OFF ratio and thermal stability. It can effectively suppress the sneak-path current in 1S1R arrays, making it suitable for storage class memory and neuromorphic computing applications.

A weak-axis moment connection incorporating a double reduced beam section and a box-reinforced panel zone (WDRBS) is introduced for hot-rolled H-shaped columns. The configuration is intended to shift inelastic demand away from the column face and to constrain weak-axis panel-zone distortion. A series of finite element models is established and calibrated to examine the cyclic response of this connection type. By varying the geometric parameters of the second reduction zone, a closed-form expression for determining its cutting depth (c2) is formulated, allowing both reduced regions to yield concurrently, i.e., the Optimum State. The numerical investigation demonstrates that connections designed according to this equation exhibit stable hysteresis, limited weld-adjacent plastic ll rightstrain, and sufficient deformation and energy-dissipation capacities. All specimens exhibit plastic rotations greater than 0.03 rad, ductility ratios greater than 3.0, and equivalent viscous damping ratios greater than 0.3. To facilitate engineering implementation using common hot-rolled sections, a simplified method is further proposed to approximate the admissible range of c2 with practical accuracy. While the length of the second reduction region has only a modest influence on peak strength (approximately 1.5–6%), it markedly affects the failure mechanism and plastic-hinge distribution. A stepwise design procedure for WDRBS connections is accordingly recommended. The study does not consider composite-slab interaction or gravity-load effects, and the findings—based solely on finite element simulations—require future verification through full-scale experimental testing.

Following the Northridge and Kobe earthquakes, research has increasingly focused on achieving high ductility in beam-to-column connections. This study investigates the seismic performance of connections featuring widened beam-end flanges in mid-flange H-beams and box columns, an area with limited prior research compared to I-section columns and narrow-flange H-beams. Detailed finite element modeling using ABAQUS 6.1.4 demonstrates that widened beam-end flanges significantly improve bending capacity and ductility by relocating the plastic hinge away from the connection, thereby enhancing seismic resilience. Key findings include the identification of optimal design parameters: flange length ranging from 0.55 to 0.75 times the beam flange width, beam flange cutting length between 0.36 and 0.39 times the beam depth, and flange cutting depth from 0.19 to 0.23 times the beam flange width. These parameters ensure effective plastic hinge development and improved structural performance. This study introduces a novel approach that emphasizes geometric optimization over material-based enhancements, offering a cost-effective and practical solution for improving seismic performance and extending previous research insights.

The evolution of the contact scheme has driven the technology revolution of crystalline silicon (c‐Si) solar cells. The state‐of‐the‐art high‐efficiency c‐Si solar cells such as silicon heterojunction (SHJ) and tunnel oxide passivated contact (TOPCon) solar cells are featured with passivating contacts based on doped Si thin films, which induce parasitic optical absorption loss and require capital‐intensive deposition processes involving flammable and toxic gasses. A promising solution to tackle this problem is to employ dopant‐free passivating contact, involving the use of transparent and cost‐effective wide band gap materials. In this review, we first introduce the dopant‐free passivating contact, from carrier transport mechanisms, material classification to evaluation methods. Then we focus on the advances in different strategies to improve cell performance, including material property optimization, structural and interfacial engineering, as well as various post‐treatments. At the end, the challenge and perspective of dopant‐free passivating contact c‐Si solar cells are discussed. This article provides an overview of the mechanism and materials of dopant‐free passivating contacts for crystalline silicon solar cells, and focuses on the recent advances in contact configuration and interface engineering for efficiency and stability enhancement.

Owing to its large work function, MoOX has been widely used for hole-selective contact in both thin film and crystalline silicon solar cells. In this work, thermally evaporated MoOX films are employed on the rear sides of p-type crystalline silicon (p-Si) solar cells, where the optical and electronic properties of the MoOX films as well as the corresponding device performances are investigated as a function of post-annealing treatment. The MoOX film annealed at 100 °C shows the highest work function and proves the best hole selectivity based on the results of energy band simulation and contact resistivity measurements. The full rear p-Si/MoOX/Ag-contacted solar cells demonstrate the best performance with an efficiency of 19.19%, which is the result of the combined influence of MoOX’s hole selectivity and passivation ability.

Silicon heterojunction (HJT) solar cells use hydrogenated amorphous silicon (a-Si:H) to form passivating contacts. To obtain high performance, many crucial applications have been confirmed and introduced. In this work, extensive light soaking (ELS) was used to comprehensively investigate a-Si:H films and HJT solar cells. The enhanced effective minority carrier lifetime ( τ eff ) for c-Si wafers passivated with a-Si:H was achieved via extensive light soaking, and the passivation enhancement can reach saturation in few seconds. It was observed that there was a significant contribution of low thermal annealing (LTA) process, excellently improving the ultimate passivation function of ELS. A comparison of c-Si wafers passivated with different a-Si stacks under various temperatures was examined, and the activation and deactivation performance during repeated extensive light soaking-low thermal annealing cycles was systematically discussed. Finally, the reversibility of efficiency enhancement and degradation in HJT solar cells related to extensive light soaking-low thermal annealing cycles was demonstrated for the first time.

To evaluate the slip resistance of high-strength bolted friction-type connections subjected to different corrosion-protection treatments, calibration tests were performed on six representative faying-surface conditions: sand-blasted (uncoated), epoxy zinc-rich primer, waterborne inorganic zinc-rich coating, alcohol-soluble inorganic anti-corrosion anti-slip primer, a complete multi-layer protective coating system, and cold galvanizing. Fifteen test groups comprising 45 tensile specimens were examined to determine slip factors, which were then compared with values recommended in domestic and international design standards. The results show that sand-blasted surfaces (W type) exhibit stable slip factors of μ = 0.43–0.45; alcohol-soluble inorganic primer surfaces (S type) provide the highest slip resistance with μ = 0.49–0.51, representing an increase of approximately 13%–18% compared with sand-blasted surfaces; and cold-galvanized surfaces (D type) achieve favourable performance with μ ≈ 0.44. Waterborne inorganic zinc-rich surfaces (A type) yield μ ≈ 0.33, corresponding to a reduction of about 25%, and are suitable for non-slip-critical connections. In contrast, epoxy zinc-rich primers (C type) and complete multi-layer coating systems (X type) present lower slip factors of μ = 0.26–0.28 and μ ≈ 0.23, corresponding to reductions of approximately 35%–45% and about 50%, respectively, indicating that the X-type treatment is unsuitable for slip-critical applications. The influence of bolt diameter is limited, with slip-factor variations within 5%–8% under the same surface condition, and no statistically significant effect confirmed by two-way ANOVA. These findings provide a quantitative experimental basis for the design, classification, and future standardization of friction-type bolted connections with coated faying surfaces.