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The rapidly evolving opto-electronic field demands photo-detectors that are fast, energy efficient and low cost. These challenges lead researcher to exploration of novel materials. Among the IV-VI compound semiconductor, In0.02Sn0.73Se0.25 is a 2D layered material that promises high optoelectronic properties and has many applications in optoelectronics and photonics. In this work, we report the fabrication and characterization of a photodetector based on In0.02Sn0.73Se0.25 ternary crystals, grown via the direct vapor transport technique. The device demonstrates better response speed, with rise and decay times as fast as 12 ms, positioning it among the quickest photodetectors reported. With a responsivity of 11.81 μAW−1 and detectivity of 1.84 × 107 Jones at a wavelength of 450 nm under an applied power density of 100 mWcm−2, the rapid response time highlights the potential of In0.02Sn0.73Se0.25 based devices for high-speed optoelectronic applications. The photodetector’s performance was further analysed under varying wavelengths, applied biases, and incident power intensities. Structural analysis through X-ray diffraction (XRD) confirmed the crystalline quality of the In0.02Sn0.73Se0.25 materials, underscoring the potential of these ternary crystals in the development of next-generation optoelectronic devices.

Layered chalcogenide materials (LCMs) are emerging materials in recent years for its much more potential for application in photonics. As a member of the LCM family, SnSe2 is explored with a band gap of nearer to 1.2 eV semiconducting material. In this research work, direct vapour transport method has been used to synthesize pristine SnSe2 and Indium doped SnSe2. Raman spectra analysis were conducted on SnSe2 and (InxSn1–x)Se2 crystals. The photo switches on/off ratio under LED illumination intensities 50 mW/cm2 and 75 mW/cm2to obtain photo response parameters for high-performance photo conducting devices.

Single crystals of Indium Selenide (InSe) were successfully grown by direct vapor transport method. The grown crystals were characterized by estimating their surface morphology, chemical composition, structural, optical and photoconductive properties using appropriate techniques. SEM image suggested that InSe crystal has layered-type surface without morphological defects. Also, the hexagonal structure of crystal has been confirmed by X-ray diffraction (XRD) spectra and selected area electron diffraction (SAED) pattern. The crystal exhibits high absorption coefficient (10 4 cm −1 ) in visible region and direct bandgap of 1.22 eV. The trap depth parameters and photoconductivity parameters were determined by the growth-decay curve and they depend upon illumination intensity, temperature and wavelength of incident light. The grown InSe crystals have excellent photoconductive properties and hence can be utilized in different photoelectrical applications.

The current-voltage characteristics of In/p-Si Schottky diode measured over a temperature range of 120-360 K have been interpreted on the basis of thermionic emission across an inhomogenous Schottky contact. The experiment shows that the apparent barrier height Φbe increases and ideality factor decreases from 0.26 eV and 6.36 at 120 K to 0.70 eV and 1.91 at 360 K respectively. The variation of effective Schottky barrier height and ideality factor with temperature has been explained considering lateral inhomogeneties at the metal-semiconductor interface. We have also discussed whether or not the junction current has been connected themionic field emission (TFE) mechanisms.

Investigation and understanding of Schottky diodes continue to be interesting both for basic as well as technological points of view. Even now the evolutionary aspects of such contacts are not very clearly understood. In this paper it is shown that in respect of interfacial strain contribution to the barrier heights of such contacts semiconductor - liquid metal contacts are relatively better placed than solid semiconductor-solid metal contacts. Results on Ga-Si(p) contact are discussed in this paper to show phase sensitive contribution to the barrier height of such Schottky contacts.

The evolution of barrier at Schottky contact and its stabilization to value characterized by the barrier height and unambiguous measurement is still being curiously perused as they hold the key control and manufacture of tailor made Schottky devices for a host of existing and potential for future applications in electronics, optoelectronics and microwave devices. In this context, gallium - silicon Schottky diode has been fabricated and analyzed.

This research used system dynamics modeling to assess the synergies generated by industrial symbiosis in food supply chains, focusing on resource recovery and waste reduction. The examined symbiotic systems included food waste valorization, energy recovery, and by-product interchange across sectors including agricultural, food processing, and bioenergy production. The findings indicated that the agriculture sector achieved a 15% decrease in waste via effective by-product exchange. Food processing showed a 20% reduction in energy use via waste-to-energy conversion. The statistical study revealed a substantial association between enhanced symbiotic relationships and improved resource efficiency. Furthermore, the significance of inter-industry cooperation was paramount, since food waste was reused more efficiently in areas with robust industrial networks. Moreover, system performance was affected by external influences, including market demand and regulatory rules. These results provide significant insights into the capacity of industrial symbiosis to improve circular economy practices within food supply chains, hence promoting sustainability and resource efficiency.