Explore the vast range of titles available.

Monolayer molybdenum disulfide (ML-MoS 2 ) is an emergent two-dimensional (2D) semiconductor holding potential for flexible integrated circuits (ICs). The most important demands for the application of such ML-MoS 2 ICs are low power consumption and high performance. However, these are currently challenging to satisfy due to limitations in the material quality and device fabrication technology. In this work, we develop an ultra-thin high-κ dielectric/metal gate fabrication technique for the realization of thin film transistors based on high-quality wafer scale ML-MoS 2 on both rigid and flexible substrates. The rigid devices can be operated in the deep-subthreshold regime with low power consumption and show negligible hysteresis, sharp subthreshold slope, high current density, and ultra-low leakage currents. Moreover, we realize fully functional large-scale flexible ICs operating at voltages below 1 V. Our process could represent a key step towards using energy-efficient flexible ML-MoS 2 ICs in portable, wearable, and implantable electronics. The application of 2D MoS 2 flexible integrated circuits (ICs) is currently limited by the material quality over large areas and the device fabrication technology. Here the authors report a gate-first fabrication technique to realize wafer-scale monolayer MoS 2 ICs on rigid and flexible substrates with high performance and low power consumption.

Monolayer molybdenum disulfide (MoS 2 ), an emergent two-dimensional (2D) semiconductor, holds great promise for transcending the fundamental limits of silicon electronics and continue the downscaling of field-effect transistors. To realize its full potential and high-end applications, controlled synthesis of wafer-scale monolayer MoS 2 single crystals on general commercial substrates is highly desired yet challenging. Here, we demonstrate the successful epitaxial growth of 2-inch single-crystal MoS 2 monolayers on industry-compatible substrates of c -plane sapphire by engineering the formation of a specific interfacial reconstructed layer through the S/MoO 3 precursor ratio control. The unidirectional alignment and seamless stitching of MoS 2 domains across the entire wafer are demonstrated through cross-dimensional characterizations ranging from atomic- to centimeter-scale. The epitaxial monolayer MoS 2 single crystal shows good wafer-scale uniformity and state-of-the-art quality, as evidenced from the ~100% phonon circular dichroism, exciton valley polarization of ~70%, room-temperature mobility of ~140 cm 2 v −1 s −1 , and on/off ratio of ~10 9 . Our work provides a simple strategy to produce wafer-scale single-crystal 2D semiconductors on commercial insulator substrates, paving the way towards the further extension of Moore’s law and industrial applications of 2D electronic circuits. 2D MoS 2 is being intensively investigated as a promising candidate to extend the downscaling of electronic devices. Here, the authors report a buffer-layer-control method for the growth of wafer-scale single-crystalline MoS 2 monolayers on industry-compatible sapphire substrates with competitive optical and electronic properties.

Recent advances have uncovered an exotic sliding ferroelectric mechanism, which endows to design atomically thin ferroelectrics from non-ferroelectric parent monolayers. Although notable progress has been witnessed in understanding the fundamental properties, functional devices based on sliding ferroelectrics remain elusive. Here, we demonstrate the rewritable, non-volatile memories at room-temperature with a two-dimensional (2D) sliding ferroelectric semiconductor of rhombohedral-stacked bilayer MoS 2 . The 2D sliding ferroelectric memories (SFeMs) show superior performances with a large memory window of >8 V, a high conductance ratio of above 10 6 , a long retention time of >10 years, and a programming endurance greater than 10 4 cycles. Remarkably, flexible SFeMs are achieved with state-of-the-art performances competitive to their rigid counterparts and maintain their performances post bending over 10 3 cycles. Furthermore, synapse-specific Hebbian forms of plasticity and image recognition with a high accuracy of 97.81% are demonstrated based on flexible SFeMs. Functional devices based on sliding ferroelectrics remain elusive. This work demonstrates the rewritable, non-volatile memory devices at room-temperature with two-dimensional sliding ferroelectric rhombohedral-stacked bilayer MoS 2 . The device shows overall good performance and can be made flexible.

Two-dimensional (2D) semiconductors, combining remarkable electrical properties and mechanical flexibility, offer fascinating opportunities for flexible integrated circuits (ICs). Despite notable progress, so far the showcased 2D flexible ICs have been constrained to basic logic gates and ring oscillators with a maximum integration scale of a few thin film transistors (TFTs), creating a significant disparity in terms of circuit scale and functionality. Here, we demonstrate medium-scale flexible ICs integrating both combinational and sequential elements based on 2D molybdenum disulfide (MoS 2 ). By co-optimization of the fabrication processes, flexible MoS 2 TFTs with high device yield and homogeneity are implemented, as well as flexible NMOS inverters with robust rail-to-rail operation. Further, typical IC modules, such as NAND, XOR, half-adder and latch, are created on flexible substrates. Finally, a medium-scale flexible clock division module consisting of 112 MoS 2 TFTs is demonstrated based on an edge-triggered Flip-Flop circuit. Our work scales up 2D flexible ICs to medium-scale, showing promising developments for various applications, including internet of everything, health monitoring and implantable electronics. Flexible integrated circuits (ICs) based on 2D semiconductors hold promise for various applications, but their scale has so far remained limited to a low number of devices. Here, the authors report the fabrication of medium-scale flexible ICs integrating both combinational and sequential elements based on 2D MoS 2 transistors.

Background Although platelet-rich plasma (PRP) has been increasingly used for the treatment of lumbar disc herniation (LDH), its effect on patient outcomes lacks systematic assessment. This study aimed to compare the effects of PRP treatment and other treatments in LDH patients using the Oswestry Disability Index (ODI) and two visual analog scales (VASs) via a meta-analysis. Methods We systematically searched relevant studies from the PubMed, Embase, and Cochrane Library databases from their inception to October 24, 2024. The visual analog scale of back pain (VAS-BP), visual analog scale of leg pain (VAS-LP), pooled VAS and ODI score data at 1, 3, 6, and 12 months after surgery were extracted. A fixed/random effects model was used for the meta-analysis. Sensitivity analysis was performed to explore the main sources of heterogeneity and investigate the robustness of the results. Results This meta-analysis included 8 studies involving 697 patients. The results revealed that the ODI in the PRP group was significantly lower than that in the control group at most time points after surgery ( P  < 0.05). The VAS-BP score at 3 and 6 months after surgery, the VAS-LP score at 3, 6, and 12 months after surgery, and the pooled VAS score at the 3 months after surgery ( P  < 0.05) were significantly lower in the PRP group. Conclusions Intradiscal PRP injection can significantly alleviate long-term pain and dysfunction in LDH patients, and its efficacy is greater than that of the control treatment; however, further studies are needed to verify the long-term mechanism involved.

Serine/threonine protein phosphatase 2C (PP2C) dephosphorylates proteins and plays crucial roles in plant growth, development, and stress response. In this study, we characterized a clade B member of maize PP2C family, i.e., ZmPP2C26, that negatively regulated drought tolerance by dephosphorylating ZmMAPK3 and ZmMAPK7 in maize. The ZmPP2C26 gene generated ZmPP2C26L and ZmPP2C26S isoforms through untypical alternative splicing. ZmPP2C26S lost 71 amino acids including an MAPK interaction motif and showed higher phosphatase activity than ZmPP2C26L. ZmPP2C26L directly interacted with, dephosphorylated ZmMAPK3 and ZmMAPK7, and localized in chloroplast and nucleus, but ZmPP2C26S only dephosphorylated ZmMAPK3 and localized in cytosol and nucleus. The expression of ZmPP2C26L and ZmPP2C26 was significantly inhibited by drought stress. Meanwhile, the maize zmpp2c26 mutant exhibited enhancement of drought tolerance with higher root length, root weight, chlorophyll content, and photosynthetic rate compared with wild type. However, overexpression of ZmPP2C26L and ZmPP2C26S significantly decreased drought tolerance in Arabidopsis and rice with lower root length, chlorophyll content, and photosynthetic rate. Phosphoproteomic analysis revealed that the ZmPP2C26 protein also altered phosphorylation level of proteins involved in photosynthesis. This study provides insights into understanding the mechanism of PP2C in response to abiotic stress.

Stacking order plays a crucial role in determining the crystal symmetry and has significant impacts on electronic, optical, magnetic, and topological properties. Electron-phonon coupling, which is central to a wide range of intriguing quantum phenomena, is expected to be intricately connected with stacking order. Understanding the stacking order-dependent electron-phonon coupling is essential for understanding peculiar physical phenomena associated with electron-phonon coupling, such as superconductivity and charge density waves. In this study, we investigate the effect of stacking order on electron-infrared phonon coupling in graphene trilayers. By using gate-tunable Raman spectroscopy and excitation frequency-dependent near-field infrared nanoscopy, we show that rhombohedral ABC-stacked trilayer graphene has a significant electron-infrared phonon coupling strength. Our findings provide novel insights into the superconductivity and other fundamental physical properties of rhombohedral ABC-stacked trilayer graphene, and can enable nondestructive and high-throughput imaging of trilayer graphene stacking order using Raman scattering. Via Raman and infrared spectroscopy measurements, X. Zan et al . find that rhombohedral ABC trilayer graphene has stronger electron/infrared-phonon coupling than Bernal ABA trilayer graphene.

The effects of soybean oil (20%, v/w) and extraction time (30, 60, or 90 min) on volatile compounds in cinnamon bark extract were investigated. The relative content and odor activity values (OAVs) of volatile compounds were measured by Gas Chromatography-Mass Spectrometer (GC-MS). The results showed that a total of 26 and 27 volatile compounds were detected in the water extract and the aqueous phase of the water/oil extraction, respectively. Hexanal, nonanal, cinnamaldehyde, D-limonene, 1-octen-3-ol, linalool, and anethole were the major aroma-active compounds, accounting for 85% of the total substance content. Cinnamaldehyde had the highest contribution rate to the aroma of the water extract (26%), whereas anethole has the highest contribution rate to the aroma of the oil/water extract (30%). Whether or not the extraction medium contained soybean oil, the relative content of aroma-active compounds in the aqueous phase decreased with increased extraction time, and the relative content of these compounds in the aqueous phase further decreased when soybean oil was present. This should be due to the high hydrophobicity of these compounds, which were prone to dissolving in the oil layer during the extraction process, resulting in a decrease in the relative content of aroma-active compounds in the aqueous phase.

Excitons dominate the photonic and optoelectronic properties of a material. Although significant advancements exist in understanding various types of excitons, progress on excitons that are indirect in both real- and momentum-spaces is still limited. Here, we demonstrate the real- and momentum-indirect neutral and charged excitons (including their phonon replicas) in a multi-valley semiconductor of bilayer MoS2, by performing electric-field/doping-density dependent photoluminescence. Together with first-principles calculations, we uncover that the observed real- and momentum-indirect exciton involves electron/hole from K/Γ valley, solving the longstanding controversy of its momentum origin. Remarkably, the binding energy of real- and momentum-indirect charged exciton is extremely large (i.e., ~59 meV), more than twice that of real- and momentum-direct charged exciton (i.e., ~24 meV). The giant binding energy, along with the electrical tunability and long lifetime, endows real- and momentum-indirect excitons an emerging platform to study many-body physics and to illuminate developments in photonics and optoelectronics.

Monolayer molybdenum disulfide (MoS 2 ) has emerged as one of the most promising channel materials for next-generation nanoelectronics and optoelectronics owing to its atomic thickness, dangling-bond-free flat surface, and high electrical quality. Currently, high-quality monolayer MoS 2 wafers are primarily grown on sapphire substrates incompatible with conventional device fabrication, and thus transfer processes to a suitable substrate are typically required before the device can be processed. Here, we demonstrate the batch production of transfer-free MoS 2 top-gate devices directly on sapphire growth substrates via step engineering. By introducing substrate steps on growth substrate sapphire, high- κ dielectric layers with superior quality and uniform can be directly deposited on the epitaxially grown monolayer MoS 2 . For the substrate with a maximum step density of 100 µm −1 , the gate capacitance can reach ∼ 1.87 µF·cm −2 , while the interface trap state density ( D it ) can be as low as ∼ 7.6 × 10 10 cm −2 ·eV −1 . The direct deposition of high-quality dielectric layers on grown monolayer MoS 2 enables the batch fabrication of top-gate devices devoid of transfer and thus excellent device yield of > 96%, holding great promise for large-scale two-dimensional (2D) integrated circuits.