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Journal Article
Low power flexible monolayer MoS2 integrated circuits
2023
Overview
Monolayer molybdenum disulfide (ML-MoS
2
) is an emergent two-dimensional (2D) semiconductor holding potential for flexible integrated circuits (ICs). The most important demands for the application of such ML-MoS
2
ICs are low power consumption and high performance. However, these are currently challenging to satisfy due to limitations in the material quality and device fabrication technology. In this work, we develop an ultra-thin high-κ dielectric/metal gate fabrication technique for the realization of thin film transistors based on high-quality wafer scale ML-MoS
2
on both rigid and flexible substrates. The rigid devices can be operated in the deep-subthreshold regime with low power consumption and show negligible hysteresis, sharp subthreshold slope, high current density, and ultra-low leakage currents. Moreover, we realize fully functional large-scale flexible ICs operating at voltages below 1 V. Our process could represent a key step towards using energy-efficient flexible ML-MoS
2
ICs in portable, wearable, and implantable electronics.
The application of 2D MoS
2
flexible integrated circuits (ICs) is currently limited by the material quality over large areas and the device fabrication technology. Here the authors report a gate-first fabrication technique to realize wafer-scale monolayer MoS
2
ICs on rigid and flexible substrates with high performance and low power consumption.
Publisher
Nature Publishing Group UK,Nature Publishing Group,Nature Portfolio
Subject
