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Resistance switching characteristics of CeO 2 /Ti/CeO 2 tri-layered films sandwiched between Pt bottom electrode and two different top electrodes (Ti and TaN) with different work functions have been investigated. RRAM memory cells composed of TaN/CeO 2 /Ti/CeO 2 /Pt reveal better resistive switching performance instead of Ti/CeO 2 /Ti/CeO 2 /Pt memory stacks. As compared to the Ti/CeO 2 interface, much better ability of TaN/CeO 2 interface to store and exchange plays a key role in the RS performance improvement, including lower forming/SET voltages, large memory window (~10 2 ) and no significant data degradation during endurance test of >10 4 switching cycles. The formation of TaON thinner interfacial layer between TaN TE and CeO 2 film is found to be accountable for improved resistance switching behavior. Partial charge density of states is analyzed using density functional theory. It is found that the conductive filaments formed in CeO 2 based devices is assisted by interstitial Ti dopant. Better stability and reproducibility in cycle-to-cycle (C2C) resistance distribution and V set /V reset uniformity were achieved due to the modulation of current conduction mechanism from Ohmic in low field region to Schottky emission in high field region.

The effectiveness of deferred surgical repair of ventricular septal rupture (VSR) post-myocardial infarction (MI) with cardiogenic shock remains limited to case reports. Our study aimed to investigate the outcomes and survival analysis following mechanical circulatory support (MCS) in patients after VSR who develop cardiogenic shock. We analyzed 27 patients with post-MI VSR and cardiogenic shock who received deferred surgical repair while stabilized on MCS between January 2018 and March 2020. After normality test adjustments, continuous variables were expressed as mean ± standard deviation (SD). These were compared using the Mann-Whitney U test and Student's t-test. Categorical variables were compared using chi-square or Fisher's exact test. To identify predictors of operative mortality, univariate analysis of clinical characteristics and interventions followed by logistic regression was carried out. P-value of < 0.05 was considered significant. All patients had preoperative MCS. Emergency repair was avoided in all the patients. The mean age of the participants was 64.96 with the majority being males (74.1%). On average, the mean time from MI to VSR repair was 18.85 days. Delayed revascularization was associated with increased mortality (OR 17.500, 95% CI 2.365-129.506, P = 0.005). Other factors associated with increased mortality were ejection fraction (EF), three-vessel disease, Killip class, early surgery, and prolonged use of inotropes. The operative mortality was 11% with an overall mortality of 33.3%. The one-year survival rate was 66.7%. The use of MCS in adjunct to a deferred surgical approach shows an improved survival outcome of patients with VSR complicated by cardiogenic shock. Further investigations are required regarding the optimal time for MCS and surgical repair.

Nitrogen is crucial for plant growth, but deficiency and excess can harm plants. Fertilizers like Diammonium Phosphate ( DAP), which releases ammonium (NH 4 + ), are common, yet over-application can cause NH 4 + toxicity, resulting in stunted roots and leaf damage. This study investigated the impact of NH 4 + toxicity on strawberry growth, yield, and fruit quality to inform better fertilization practices. The experiment was conducted at The Islamia University of Bahawalpur, Pakistan. Five treatments with varying DAP rates (0 g, 4 g, 7 g, 10 g, and 13 g per plant) were applied to strawberry plants in a completely randomized design with four replications. Photosynthetic pigments, hydrogen peroxide (H 2 O 2 ), malondialdehyde (MDA), electrolyte leakage (EL), and yield parameters were measured. The 4 g DAP treatment yielded the highest chlorophyll-a (0.5775 mg/g FW) and total chlorophyll content (0.705 mg/g FW). However, increasing DAP doses led to a decline in chlorophyll-a, chlorophyll-b, and total chlorophyll content, with the 13 g DAP treatment exhibiting the lowest levels. H 2 O 2 content increased with higher DAP doses, with the 13 g DAP treatment showing the highest value (75 µmol/g FW). Higher DAP doses also increased MDA content and EL, indicating oxidative stress and membrane damage. The 4 g DAP treatment showed minimal changes in H 2 O 2 and MDA content. Moderate DAP levels (4 g per plant) enhanced strawberry growth, yield, and photosynthetic activity, while higher doses caused significant stress, leading to reduced growth and yield. Managing NH 4 + levels in fertilization is crucial for optimizing strawberry production. Therefore, moderate doses of DAP (ammonium ion) should be used to avoid ammonium toxicity.

Objective: To compare early outcomes of different surgical repair techniques used in adult patients with unrepaired Tetralogy of Fallot. Study Design: Analytical Cross-sectional study. Place and Duration of Study: Armed Forces Institute of Cardiology/National Institute of Heart Diseases, Rawalpindi Pakistan, from Jan 2014 to Dec 2023. Methodology: Seventy seven adults with unrepaired Tetralogy of Fallot were recruited through universal sampling and divided into 3 groups of Tetralogy of Fallot repair techniques, Group A: Pulmonary Valve Sparing, Group B: Transannular patch +MonoCusp, Group C: TAP+Pulmonary Valve Replacement. Chi-square and one-way ANOVA were applied to compare early outcomes like Cardiopulmonary Bypass time, Aortic cross clamp time, reopening for bleeding, mortality, in-hospital stay etc. with repair techniques. p<0.05 was considered as statistically significant. Results: Out of seventy seven patients, 50(64.9%) were males and 27(35.1%) were females. Median age of participants was 19(IQR=18-22) years. Group A had 35(45.5%) patients, while Group B and Group C included 20(25.9%) and 22(28.6%) patients respectively. Group A had shorter CBP time, ACC time, Intensive Care Unit stay and inotropic support etc. (p<0.05). Single case of mortality in group A 1(2.9%) out of 35 and in Group C 1(4.5%) out of 22 patients was observed, while high mortality of 4(20.0%) cases was observed in Group B. Conclusion: Efforts should be made to preserve the patient's native pulmonary valve and annulus since PVS TOF repair provides better early results. When dividing, a hypoplastic pulmonary valve annulus cannot be avoided. TAP + PVR produces better results than TAP + MonoCusp.

The mechanism of forming-free bipolar resistive switching in a Zr/CeOx/Pt device was investigated. High-resolution transmission electron microscopy and energy-dispersive spectroscopy analysis indicated the formation of a ZrOy layer at the Zr/CeOx interface. X-ray diffraction studies of CeOx films revealed that they consist of nano-polycrystals embedded in a disordered lattice. The observed resistive switching was suggested to be linked with the formation and rupture of conductive filaments constituted by oxygen vacancies in the CeOx film and in the nonstoichiometric ZrOy interfacial layer. X-ray photoelectron spectroscopy study confirmed the presence of oxygen vacancies in both of the said regions. In the low-resistance ON state, the electrical conduction was found to be of ohmic nature, while the high-resistance OFF state was governed by trap-controlled space charge-limited mechanism. The stable resistive switching behavior and long retention times with an acceptable resistance ratio enable the device for its application in future nonvolatile resistive random access memory (RRAM).

Background Excessive or inappropriate use of social media has been linked to disruptions in regular work, well-being, mental health, and overall reduction of quality of life. However, a limited number of studies documenting the impact of social media on health-related quality of life (HRQoL) are available globally. Aim This study aimed to explore the perceived social media needs and their impact on the quality of life among the adult population of various selected countries. Methodology A cross-sectional, quantitative design and analytical study utilized an online survey disseminated from November to December 2021. Results A total of 6689 respondents from ten countries participated in the study. The largest number of respondents was from Malaysia (23.9%), followed by Bangladesh (15.5%), Georgia (14.8%), and Turkey (12.2%). The prevalence of social media users was over 90% in Austria, Georgia, Myanmar, Nigeria, and the Philippines. The majority of social media users were from the 18–24 age group. Multiple regression analysis showed that higher education level was positively correlated with all four domains of WHOQoL. In addition, the psychological health domain of quality of life was positively associated in all countries. Predictors among Social Media Needs, Affective Needs (β = -0.07), and Social Integrative Needs (β = 0.09) were significantly associated with psychological health. Conclusion The study illuminates the positive correlation between higher education levels and improved life quality among social media users, highlighting an opportunity for policymakers to craft education-focused initiatives that enhance well-being. The findings call for strategic interventions to safeguard the mental health of the global social media populace, particularly those at educational and health disadvantages.

Resistance switching characteristics of CeO /Ti/CeO tri-layered films sandwiched between Pt bottom electrode and two different top electrodes (Ti and TaN) with different work functions have been investigated. RRAM memory cells composed of TaN/CeO /Ti/CeO /Pt reveal better resistive switching performance instead of Ti/CeO /Ti/CeO /Pt memory stacks. As compared to the Ti/CeO interface, much better ability of TaN/CeO interface to store and exchange plays a key role in the RS performance improvement, including lower forming/SET voltages, large memory window (~10 ) and no significant data degradation during endurance test of >10 switching cycles. The formation of TaON thinner interfacial layer between TaN TE and CeO film is found to be accountable for improved resistance switching behavior. Partial charge density of states is analyzed using density functional theory. It is found that the conductive filaments formed in CeO based devices is assisted by interstitial Ti dopant. Better stability and reproducibility in cycle-to-cycle (C2C) resistance distribution and V /V uniformity were achieved due to the modulation of current conduction mechanism from Ohmic in low field region to Schottky emission in high field region.