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With the advancement of technology, inexpensive and highly scalable deposition techniques are extremely desirable for low-cost device fabrication. Aerosol-assisted chemical vapor deposition (AACVD) is a less complex and scalable deposition technique that works at atmospheric pressure. In this article, we demonstrate the growth of chromium oxide (Cr 2 O 3 ) films onto n-type silicon substrates utilizing the AACVD method, leading to the first-ever p-Cr 2 O 3 /n-silicon heterojunction device by this method. In this paper, we have analyzed the effect of temperature and concentration of precursor solution on the morphology of the deposited films. The structural analysis of the Cr 2 O 3 films shows a closely packed uniform structure with the root mean square (RMS) value of surface roughness varying from 1.6 nm to 5.99 nm. The maximum growth rate of 45.20 nm/min on silicon substrate was observed at 500 °C with 0.05 M precursor solution. X-ray photoelectron spectroscopy (XPS) showed a mixed phase layer, with the ratio of Cr 3+ to Cr 6+ for the film deposited at 450 °C, with 0.05 M precursor solution being 1.51 and increasing with the deposition temperature. The current–voltage characteristics showed a diode-like behavior with a high cut-in voltage of about 2 V. A high cut-in voltage exists due to a significant band offset at both the conduction band and valence band exists between Cr 2 O 3 and silicon. The utilization of the AACVD technique to grow Cr 2 O 3 on silicon substrate using chromium acetylacetonate as a precursor combined with the illustration of diode characteristics provide the novelty of this work.

This paper analyzes the growth process of high-quality α -Fe 2 O 3 thin films using aerosol-assisted chemical vapor deposition (AACVD) in a custom-built setup. The work investigates the influence of solvents and deposition temperature on the film characteristics. The samples of α -Fe 2 O 3 thin films were prepared using three different solvents for a combination of five different temperatures of 250°C, 300°C, 350°C, 400°C, and 450°C. Structural investigations were conducted using x-ray diffraction, revealing solvent-dependent variations in the full width at half maximum (FWHM) of the x-ray rocking curve implying a change in the crystallite size and film thickness. Energy-dispersive x-ray spectroscopy (EDX) detected changes in the weight percentage of iron with solvents, indicating a variation in the thickness of α -Fe 2 O 3 films. Morphological analysis using field-emission scanning electron microscopy (FESEM) demonstrated solvent- and temperature-dependent changes in film morphology. Ethanol and methanol at higher temperatures resulted in a flake-like structure, while deionized (DI) water maintained the original film structure. The choice of solvent significantly impacted film thickness, with methanol producing a 648.2-nm-thick film of α -Fe 2 O 3 grown within 15 min at 350°C. Surface roughness variations were observed using atomic force microscopy (AFM), showing smoother films at lower temperatures and rougher surfaces at higher temperatures, particularly for methanol samples, reaching a root-mean-square (RMS) value of 9.32 nm at a deposition temperature of 450°C. X-ray photoelectron spectroscopy (XPS) analysis revealed changes in the stability of the Fe 3+ state depending on the solvent used in the precursor solution, with ethanol exhibiting the highest stability. This study highlights the importance of considering solvent properties during thin film deposition, as they influence morphology, thickness, and chemical composition, especially under high-temperature conditions. Graphical Abstract

Nickel oxide (NiO x ) is an optimum material for hole selective contacts and is extensively used in multiple photovoltaic technologies. The deposition of nickel oxide for photovoltaic applications is primarily performed with sputtering. In this paper, we will report on the deposition of nickel oxide thin film with aerosol-assisted chemical vapor deposition (AACVD). Nickel nitrate hexahydrate was used as the nickel salt while the deposition was performed at 550 °C for a time of 15 min. The thin films as obtained showed a uniform surface morphology with a thickness of about 15 nm and a grain size of 40 nm. The AFM results showed a surface with a root-mean square surface roughness value varying between 1.69 to 2.23 nm. The XPS analysis showed that the NiO x layer is slightly non-stoichiometric with a slight excess of oxygen and can be denoted as NiO 1.05 . The current–voltage measurements showed a diode-like behaviour with a current density of 4.54 mA/cm 2 obtained at 1 V. The combination of developing NiO x thin films with AACVD on silicon and using nickel nitrate as precursor along with showing the diode characteristics provide the novelty of this work.

α -Cr 2 O 3 is used as a buffer layer for the growth of α -Ga 2 O 3 on sapphire for power devices. Presently, the growth of crystalline corundum-structured metal oxides layers, except for α -Cr 2 O 3 , is performed with metal acetylacetonates. This article investigates the development of a crystalline α -Cr 2 O 3 thin films on c -plane sapphire with chromium acetylacetonate (CrAc) as precursor over a wide temperature range varying from 400 to 550 °C. The temperature range not only ensures the compatibility of the process with α -Ga 2 O 3 technology but also satisfies the requirement that the window is large enough to adequately optimize the quality of crystalline α -Cr 2 O 3 thin film. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS) were performed to analyse the quality of the crystalline α -Cr 2 O 3 layer. The XPS result showed that the ratio of different oxidation states of α -Cr 2 O 3 changes with deposition temperature. An optimal deposition temperature at 500 °C with the molarity of CrAc being 0.05 M is achieved for better quality α -Cr 2 O 3 thin film deposition. Thin film of α -Cr 2 O 3 of thickness 530.5 nm has been deposited at optimal condition with a deposition rate of 35.37 nm/min and has a crystallite size of 31.21 nm and root mean square value of surface roughness of 0.647 nm.

This study reports the development of titanium dioxide thin film with aerosol-assisted chemical vapour deposition and demonstrates the formation of a heterojunction diode with p-type silicon. The structural analysis of the thin film shows a nanostructured layer, with an average particle size of 32 nm, a layer thickness of 12 nm and the root mean square surface roughness value varying from 1.11 to 1.45 nm. The chemical analysis with XPS showed a non-stoichiometric and mixed state titanium dioxide thin film, with TiO 1.9 being an appropriate representation of the film composition. The current–density voltage characteristics showed a high cut-in voltage of close to 2 V. A high cut-in voltage is due to the large value of valence band offset existing between titanium dioxide and silicon. However, the series resistance in the on-state is significantly high and can be attributed to the undoped nature of the titanium dioxide thin film.

The aim of the study was to compare the effectiveness of point-of-care ultrasound (POCUS) with direct radiography in diagnosis and management of the patients with distal radius fractures (DRFs). In this study, patients between ages 5 and 55 years admitted to the emergency department with low energy upper extremity trauma with suspected DRF were evaluated with POCUS and direct radiography by emergency physicians (EPs) trained in either musculoskeletal (MSK) imaging or x-ray interpretation of DRF. The EP performing the POCUS examination was blinded to the x-ray results. A total of 83 patients with DRF were included in the study. There were 18 (22%) females, and 65 (78%) males enrolled in the study. Mean age was 13 ± 14 years for males, and 15 ± 13 years for females. Compared with direct radiography, POCUS yielded 98% sensitivity, 96% specificity, 98% positive predictive value, 96% negative predictive value, and 98% accuracy of the test in detecting fractures. POCUS yielded 96% sensitivity, 93% specificity value in detecting linear fractures; 78% sensitivity, 98% specificity in detecting torus-type fractures, and 100% specificity and sensitivity for detecting fissure fractures. Specificity of POCUS in the decision for reduction was 100% and sensitivity was 98%; specificity was 100% for splint application. In our study, it was shown that POCUS could be applied easily by EPs trained in MSK POCUS imaging with success in diagnosing DRF and determining the correct fracture type and required treatment methods.

The objective of the study was to compare the efficacy of point-of-care ultrasound (POCUS) and computed tomography (CT) in the diagnosis of the fracture of the bones that form the elbow joint and the determination of treatment method in elbow injuries. Forty-nine patients aged 5 to 65 years, who were admitted with low-energy elbow injuries, had at least 1 fracture of the elbow joint bones, and underwent CT scanning, were included in this study. Before the initiation of the study, orthopedic surgeons and emergency physicians determined a common treatment based on the fracture characteristics. Patients were first evaluated with direct radiography, and then with POCUS by trained emergency physicians. Emergency physicians made treatment decisions based on the ultrasonography results. Then, CT scans were performed. The CT images were interpreted by radiologists. Orthopedic surgeons made treatment decisions based on the CT interpretations. Forty-nine patients with elbow injury were included in the study. Eighteen (37%) patients were women, and 31 (63%) were men. The mean age was 21 ± 15 years. Compared with CT, sensitivity, specificity, positive predictive value, and negative predictive value of POCUS in fracture detection were 97%, 88%, 94%, and 93%, respectively. Although the sensitivity and specificity of POCUS in the decision for reduction were 95% and 100%, respectively, it was 93% and 100% in the decision for surgery. In conclusion, POCUS was shown to be successfully applied in the diagnosis and management of elbow injuries, in which direct radiography was inefficient and CT scans were required.

Current Zika virus (ZIKV) outbreaks that spread in several areas of Africa, Southeast Asia, and in pacific islands is declared as a global health emergency by World Health Organization (WHO). It causes Zika fever and illness ranging from severe autoimmune to neurological complications in humans. To facilitate research on this virus, we have developed an integrative multi-omics platform; ZikaVR ( http://bioinfo.imtech.res.in/manojk/zikavr/ ), dedicated to the ZIKV genomic, proteomic and therapeutic knowledge. It comprises of whole genome sequences, their respective functional information regarding proteins, genes, and structural content. Additionally, it also delivers sophisticated analysis such as whole-genome alignments, conservation and variation, CpG islands, codon context, usage bias and phylogenetic inferences at whole genome and proteome level with user-friendly visual environment. Further, glycosylation sites and molecular diagnostic primers were also analyzed. Most importantly, we also proposed potential therapeutically imperative constituents namely vaccine epitopes, siRNAs, miRNAs, sgRNAs and repurposing drug candidates.