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A two-qubit quantum processor in a silicon device is demonstrated, which can perform the Deutsch–Josza algorithm and the Grover search algorithm. Taken for a spin in silicon The development of platforms for spin-based quantum computing continues apace. The individual components of such a system have been the subject of much investigation, and they have been assembled to implement specific quantum-computational algorithms. Thomas Watson and colleagues have now taken such component integration and control to the next level. Using two single-electron-spin qubits in a silicon-based double quantum dot, they realize a system that can be simply programmed to perform different quantum algorithms on demand. Now that it is possible to achieve measurement and control fidelities for individual quantum bits (qubits) above the threshold for fault tolerance, attention is moving towards the difficult task of scaling up the number of physical qubits to the large numbers that are needed for fault-tolerant quantum computing 1 , 2 . In this context, quantum-dot-based spin qubits could have substantial advantages over other types of qubit owing to their potential for all-electrical operation and ability to be integrated at high density onto an industrial platform 3 , 4 , 5 . Initialization, readout and single- and two-qubit gates have been demonstrated in various quantum-dot-based qubit representations 6 , 7 , 8 , 9 . However, as seen with small-scale demonstrations of quantum computers using other types of qubit 10 , 11 , 12 , 13 , combining these elements leads to challenges related to qubit crosstalk, state leakage, calibration and control hardware. Here we overcome these challenges by using carefully designed control techniques to demonstrate a programmable two-qubit quantum processor in a silicon device that can perform the Deutsch–Josza algorithm and the Grover search algorithm—canonical examples of quantum algorithms that outperform their classical analogues. We characterize the entanglement in our processor by using quantum-state tomography of Bell states, measuring state fidelities of 85–89 per cent and concurrences of 73–82 per cent. These results pave the way for larger-scale quantum computers that use spins confined to quantum dots.

Fault-tolerant quantum computation requires qubit measurements to be both high fidelity and fast to ensure that idling qubits do not generate more errors during the measurement of ancilla qubits than can be corrected. Towards this goal, we demonstrate single-shot readout of semiconductor spin qubits with 97% fidelity in1.5μs. In particular, we show that we can engineer donor-based single-electron transistors (SETs) in silicon with atomic precision to measure single spins much faster than the spin decoherence times in isotopically purified silicon (270μs). By designing the SET to have a large capacitive coupling between the SET and target charge, we can optimally operate in the “strong-response” regime to ensure maximal signal contrast. We demonstrate single-charge detection with a signal-to-noise ratio (SNR) of 12.7 at 10 MHz bandwidth, corresponding to a SET charge sensitivity (integration time forSNR=2) of 2.5 ns. We present a theory of the shot-noise sensitivity limit for the strong-response regime which predicts that the present sensitivity is about one order of magnitude above the shot-noise limit. By reducing cold amplification noise to reach the shot-noise limit, it should be theoretically possible to achieve high-fidelity, single-shot readout of an electron spin in silicon with a total readout time of approximately 36 ns.

We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchmarking and a recently introduced method called character randomized benchmarking, which allows for more reliable estimates of the two-qubit fidelity in this system, here giving a 92% fidelity estimate for the controlled-Zgate. Interestingly, with character randomized benchmarking, the two-qubit gate fidelity can be obtained by studying the additional decay induced by interleaving the two-qubit gate in a reference sequence of single-qubit gates only. This work sets the stage for further improvements in all the relevant gate fidelities in silicon spin qubits beyond the error threshold for fault-tolerant quantum computation.

Substitutional donor atoms in silicon are promising qubits for quantum computation with extremely long relaxation and dephasing times demonstrated. One of the critical challenges of scaling these systems is determining inter-donor distances to achieve controllable wavefunction overlap while at the same time performing high fidelity spin readout on each qubit. Here we achieve such a device by means of scanning tunnelling microscopy lithography. We measure anti-correlated spin states between two donor-based spin qubits in silicon separated by 16 ± 1 nm. By utilising an asymmetric system with two phosphorus donors at one qubit site and one on the other (2P−1P), we demonstrate that the exchange interaction can be turned on and off via electrical control of two in-plane phosphorus doped detuning gates. We determine the tunnel coupling between the 2P−1P system to be 200 MHz and provide a roadmap for the observation of two-electron coherent exchange oscillations. Donor impurities in silicon are promising candidates as qubits but in order to create a large-scale quantum computer inter-qubit coupling must be introduced by precise positioning of the donors. Here the authors demonstrate the fabrication, manipulation and readout of a two qubit phosphorous donor device.

Spin states of the electrons and nuclei of phosphorus donors in silicon are strong candidates for quantum information processing applications given their excellent coherence times. Designing a scalable donor-based quantum computer will require both knowledge of the relationship between device geometry and electron tunnel couplings, and a spin readout strategy that uses minimal physical space in the device. Here we use radio frequency reflectometry to measure singlet–triplet states of a few-donor Si:P double quantum dot and demonstrate that the exchange energy can be tuned by at least two orders of magnitude, from 20 μeV to 8 meV. We measure dot–lead tunnel rates by analysis of the reflected signal and show that they change from 100 MHz to 22 GHz as the number of electrons on a quantum dot is increased from 1 to 4. These techniques present an approach for characterizing, operating and engineering scalable qubit devices based on donors in silicon. Donor spin states in silicon are good quantum bit candidates due to their long coherence times. Here, the authors use radio frequency reflectometry to measure singlet and triplet states, and to determine the tunnel coupling between few-donor silicon double quantum dots and the electrical leads.

The long term scaling prospects for solid-state quantum computing architectures relies heavily on the ability to simply and reliably measure and control the coherent electron interaction strength, known as the tunnel coupling, tc. Here, we describe a method to extract the tc between two quantum dots (QDs) utilising their different tunnel rates to a reservoir. We demonstrate the technique on a few donor triple QD tunnel coupled to a nearby single-electron transistor (SET) in silicon. The device was patterned using scanning tunneling microscopy-hydrogen lithography allowing for a direct measurement of the tunnel coupling for a given inter-dot distance. We extract t c = 5.5 1.8 GHz and t c = 2.2 1.3 GHz between each of the nearest-neighbour QDs which are separated by 14.5 nm and 14.0 nm, respectively. The technique allows for an accurate measurement of tc for nanoscale devices even when it is smaller than the electron temperature and is an ideal characterisation tool for multi-dot systems with a charge sensor.

Full-scale quantum computers require the integration of millions of qubits, and the potential of using industrial semiconductor manufacturing to meet this need has driven the development of quantum computing in silicon quantum dots. However, fabrication has so far relied on electron-beam lithography and, with a few exceptions, conventional lift-off processes that suffer from low yield and poor uniformity. Here we report quantum dots that are hosted at a 28 Si/ 28 SiO 2 interface and fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing. With this approach, we achieve nanoscale gate patterns with excellent yield. In the multi-electron regime, the quantum dots allow good tunnel barrier control—a crucial feature for fault-tolerant two-qubit gates. Single-spin qubit operation using magnetic resonance in the few-electron regime reveals relaxation times of over 1 s at 1 T and coherence times of over 3 ms. Silicon spin qubits can be fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing.

This in vitro, split–tooth study aimed to evaluate the efficiency (time taken) and effectiveness (quantity of dentine removed) of four techniques of carious dentine excavation (bur, air–abrasion, sono–abrasion and Carisolv™ gel) compared to conventional hand excavation. Eighty freshly extracted human molars were assigned to four experimental groups (n = 20), sectioned longitudinally through occlusal lesions and pre–excavation colour photomicrographs obtained. Using the natural autofluorescence of carious dentine (detected using confocal laser scanning microscopy) as an objective and reproducible guide, carious dentine removal was assessed in each half of the split tooth sample, comparing hand excavation to the test method. The time taken to reach a cavity floor that was hard to a dental probe was noted and final colour photomicrographs were taken. From the results, it was concluded that bur excavation was quickest but overprepared cavities relative to the autofluorescent signature, whereas Carisolv excavation was slowest but removed adequate quantities of tissue. Sono–abrasion tended to underprepare whereas air–abrasion was more comparable to hand excavation in both the time and amounts of dentine removed. Conventional hand excavation appeared to offer the best combination of efficiency and effectiveness for carious dentine excavation within the parameters used in this study.

The function of the interfacial transition zone (absorption layer) in resin-modified glass-ionomer cements bonded to deep dentin remains obscure. This study tested the hypotheses that the absorption layer is formed only in the presence of water derived from hydrated dentin and allows for better bonding of resin-modified glass-ionomer cements to dentin. Ten percent polyacrylic acid-conditioned, hydrated, and dehydrated deep dentin specimens were bonded with 2 resin-modified glass-ionomer cements and sealed with resins to prevent environmental water gain or loss. A non-particulate absorption layer was identified over hydrated dentin only, and was clearly discernible from the hybrid layer when bonded interfaces were examined with transmission electron microscopy. This layer was relatively more resistant to dehydration stresses, and remained intact over the dentin surface after tensile testing. The absorption layer mediates better bonding of resin-modified glass-ionomer cements to deep dentin, and functions as a stress-relieving layer to reduce stresses induced by desiccation and shrinkage.