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Qubits made by advanced semiconductor manufacturing
by
Amin, P.
, Lüthi, F.
, Scappucci, G.
, Veldhorst, M.
, Michalak, D. J.
, Zwerver, A. M. J.
, Bojarski, S. A.
, George, H. C.
, Neyens, S.
, Zheng, G.
, Lodari, M.
, Krähenmann, T.
, Droulers, G.
, Amitonov, S. V.
, Caudillo, R.
, Dehollain, J. P.
, Boter, J. M.
, Roberts, J.
, Correas-Serrano, D.
, Samkharadze, N.
, Clarke, J. S.
, Lampert, L.
, Pillarisetty, R.
, Kotlyar, R.
, Mueller, B. K.
, Watson, T. F.
, Henry, E. M.
, Vandersypen, L. M. K.
, Zietz, O. K.
in
639/766/119/1000/1017
/ 639/766/483/2802
/ 639/925/357/1017
/ 639/925/927/481
/ Arrays
/ Electrical Engineering
/ Electron beam lithography
/ Engineering
/ Fault tolerance
/ Integrated circuits
/ Magnetic resonance
/ Manufacturing
/ Phosphorus
/ Quantum computers
/ Quantum computing
/ Quantum dots
/ Qubits (quantum computing)
/ Semiconductors
/ Silicon
/ Temperature
/ Transistors
/ Transmission electron microscopy
2022
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Qubits made by advanced semiconductor manufacturing
by
Amin, P.
, Lüthi, F.
, Scappucci, G.
, Veldhorst, M.
, Michalak, D. J.
, Zwerver, A. M. J.
, Bojarski, S. A.
, George, H. C.
, Neyens, S.
, Zheng, G.
, Lodari, M.
, Krähenmann, T.
, Droulers, G.
, Amitonov, S. V.
, Caudillo, R.
, Dehollain, J. P.
, Boter, J. M.
, Roberts, J.
, Correas-Serrano, D.
, Samkharadze, N.
, Clarke, J. S.
, Lampert, L.
, Pillarisetty, R.
, Kotlyar, R.
, Mueller, B. K.
, Watson, T. F.
, Henry, E. M.
, Vandersypen, L. M. K.
, Zietz, O. K.
in
639/766/119/1000/1017
/ 639/766/483/2802
/ 639/925/357/1017
/ 639/925/927/481
/ Arrays
/ Electrical Engineering
/ Electron beam lithography
/ Engineering
/ Fault tolerance
/ Integrated circuits
/ Magnetic resonance
/ Manufacturing
/ Phosphorus
/ Quantum computers
/ Quantum computing
/ Quantum dots
/ Qubits (quantum computing)
/ Semiconductors
/ Silicon
/ Temperature
/ Transistors
/ Transmission electron microscopy
2022
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Qubits made by advanced semiconductor manufacturing
by
Amin, P.
, Lüthi, F.
, Scappucci, G.
, Veldhorst, M.
, Michalak, D. J.
, Zwerver, A. M. J.
, Bojarski, S. A.
, George, H. C.
, Neyens, S.
, Zheng, G.
, Lodari, M.
, Krähenmann, T.
, Droulers, G.
, Amitonov, S. V.
, Caudillo, R.
, Dehollain, J. P.
, Boter, J. M.
, Roberts, J.
, Correas-Serrano, D.
, Samkharadze, N.
, Clarke, J. S.
, Lampert, L.
, Pillarisetty, R.
, Kotlyar, R.
, Mueller, B. K.
, Watson, T. F.
, Henry, E. M.
, Vandersypen, L. M. K.
, Zietz, O. K.
in
639/766/119/1000/1017
/ 639/766/483/2802
/ 639/925/357/1017
/ 639/925/927/481
/ Arrays
/ Electrical Engineering
/ Electron beam lithography
/ Engineering
/ Fault tolerance
/ Integrated circuits
/ Magnetic resonance
/ Manufacturing
/ Phosphorus
/ Quantum computers
/ Quantum computing
/ Quantum dots
/ Qubits (quantum computing)
/ Semiconductors
/ Silicon
/ Temperature
/ Transistors
/ Transmission electron microscopy
2022
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Journal Article
Qubits made by advanced semiconductor manufacturing
2022
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Overview
Full-scale quantum computers require the integration of millions of qubits, and the potential of using industrial semiconductor manufacturing to meet this need has driven the development of quantum computing in silicon quantum dots. However, fabrication has so far relied on electron-beam lithography and, with a few exceptions, conventional lift-off processes that suffer from low yield and poor uniformity. Here we report quantum dots that are hosted at a
28
Si/
28
SiO
2
interface and fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing. With this approach, we achieve nanoscale gate patterns with excellent yield. In the multi-electron regime, the quantum dots allow good tunnel barrier control—a crucial feature for fault-tolerant two-qubit gates. Single-spin qubit operation using magnetic resonance in the few-electron regime reveals relaxation times of over 1 s at 1 T and coherence times of over 3 ms.
Silicon spin qubits can be fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing.
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