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Driven by narrow-linewidth bench-top lasers, coherent optical systems spanning optical communications, metrology and sensing provide unrivalled performance. To transfer these capabilities from the laboratory to the real world, a key missing ingredient is a mass-produced integrated laser with superior coherence. Here, we bridge conventional semiconductor lasers and coherent optical systems using CMOS-foundry-fabricated microresonators with a high Q factor of over 260 million and finesse over 42,000. A five-orders-of-magnitude noise reduction in the pump laser is demonstrated, enabling a frequency noise of 0.2 Hz2 Hz−1 to be achieved in an electrically pumped integrated laser, with a corresponding short-term linewidth of 1.2 Hz. Moreover, the same configuration is shown to relieve the dispersion requirements for microcomb generation that have handicapped certain nonlinear platforms. The simultaneous realization of this high Q factor, highly coherent lasers and frequency combs using foundry-based technologies paves the way for volume manufacturing of a wide range of coherent optical systems.Using CMOS-ready ultra-high-Q microresonators, a highly coherent electrically pumped integrated laser with frequency noise of 0.2 Hz2 Hz−1, corresponding to a short-term linewidth of 1.2 Hz, is demonstrated. The device configuration is also found to relieve the dispersion requirements for microcomb generation that have limited certain nonlinear platforms.

Photonic integrated circuits are widely used in applications such as telecommunications and data-centre interconnects 1 – 5 . However, in optical systems such as microwave synthesizers 6 , optical gyroscopes 7 and atomic clocks 8 , photonic integrated circuits are still considered inferior solutions despite their advantages in size, weight, power consumption and cost. Such high-precision and highly coherent applications favour ultralow-noise laser sources to be integrated with other photonic components in a compact and robustly aligned format—that is, on a single chip—for photonic integrated circuits to replace bulk optics and fibres. There are two major issues preventing the realization of such envisioned photonic integrated circuits: the high phase noise of semiconductor lasers and the difficulty of integrating optical isolators directly on-chip. Here we challenge this convention by leveraging three-dimensional integration that results in ultralow-noise lasers with isolator-free operation for silicon photonics. Through multiple monolithic and heterogeneous processing sequences, direct on-chip integration of III–V gain medium and ultralow-loss silicon nitride waveguides with optical loss around 0.5 decibels per metre are demonstrated. Consequently, the demonstrated photonic integrated circuit enters a regime that gives rise to ultralow-noise lasers and microwave synthesizers without the need for optical isolators, owing to the ultrahigh-quality-factor cavity. Such photonic integrated circuits also offer superior scalability for complex functionalities and volume production, as well as improved stability and reliability over time. The three-dimensional integration on ultralow-loss photonic integrated circuits thus marks a critical step towards complex systems and networks on silicon. Three-dimensional integration of distributed-feedback lasers and ultralow-loss silicon nitride waveguides results in ultralow-noise lasers without the need for optical isolators.

Integrated photonics has profoundly affected a wide range of technologies underpinning modern society 1 – 4 . The ability to fabricate a complete optical system on a chip offers unrivalled scalability, weight, cost and power efficiency 5 , 6 . Over the last decade, the progression from pure III–V materials platforms to silicon photonics has significantly broadened the scope of integrated photonics, by combining integrated lasers with the high-volume, advanced fabrication capabilities of the commercial electronics industry 7 , 8 . Yet, despite remarkable manufacturing advantages, reliance on silicon-based waveguides currently limits the spectral window available to photonic integrated circuits (PICs). Here, we present a new generation of integrated photonics by directly uniting III–V materials with silicon nitride waveguides on Si wafers. Using this technology, we present a fully integrated PIC at photon energies greater than the bandgap of silicon, demonstrating essential photonic building blocks, including lasers, amplifiers, photodetectors, modulators and passives, all operating at submicrometre wavelengths. Using this platform, we achieve unprecedented coherence and tunability in an integrated laser at short wavelength. Furthermore, by making use of this higher photon energy, we demonstrate superb high-temperature performance and kHz-level fundamental linewidths at elevated temperatures. Given the many potential applications at short wavelengths, the success of this integration strategy unlocks a broad range of new integrated photonics applications.  Fully integrated photonics at submicrometre wavelengths is realized by a heterogeneous integration technology.

Silicon nitride (SiN) waveguides with ultra-low optical loss enable integrated photonic applications including low noise, narrow linewidth lasers, chip-scale nonlinear photonics, and microwave photonics. Lasers are key components to SiN photonic integrated circuits (PICs), but are difficult to fully integrate with low-index SiN waveguides due to their large mismatch with the high-index III-V gain materials. The recent demonstration of multilayer heterogeneous integration provides a practical solution and enabled the first-generation of lasers fully integrated with SiN waveguides. However, a laser with high device yield and high output power at telecommunication wavelengths, where photonics applications are clustered, is still missing, hindered by large mode transition loss, non-optimized cavity design, and a complicated fabrication process. Here, we report high-performance lasers on SiN with tens of milliwatts output power through the SiN waveguide and sub-kHz fundamental linewidth, addressing all the aforementioned issues. We also show Hertz-level fundamental linewidth lasers are achievable with the developed integration techniques. These lasers, together with high- Q SiN resonators, mark a milestone towards a fully integrated low-noise silicon nitride photonics platform. This laser should find potential applications in LIDAR, microwave photonics and coherent optical communications. Achieving high output power and low noise integrated lasers is a major challenge. Here the authors experimentally demonstrate integrated lasers from a Si/SiN heterogeneous platform that shows Hertz-level linewidth, paving the way toward fully integrating low-noise silicon nitride photonics in volume using real devices for lasing.

The development of integrated semiconductor lasers has miniaturized traditional bulky laser systems, enabling a wide range of photonic applications. A progression from pure III-V based lasers to III-V/external cavity structures has harnessed low-loss waveguides in different material systems, leading to significant improvements in laser coherence and stability. Despite these successes, however, key functions remain absent. In this work, we address a critical missing function by integrating the Pockels effect into a semiconductor laser. Using a hybrid integrated III-V/Lithium Niobate structure, we demonstrate several essential capabilities that have not existed in previous integrated lasers. These include a record-high frequency modulation speed of 2 exahertz/s (2.0 × 10 18 Hz/s) and fast switching at 50 MHz, both of which are made possible by integration of the electro-optic effect. Moreover, the device co-lases at infrared and visible frequencies via the second-harmonic frequency conversion process, the first such integrated multi-color laser. Combined with its narrow linewidth and wide tunability, this new type of integrated laser holds promise for many applications including LiDAR, microwave photonics, atomic physics, and AR/VR. On-Chip integration of laser systems led to impressive development in many field of application like LIDAR or AR/VR to cite a few. Here the authors harness Pockels effect in an integrated semiconductor platform achieving fast on-chip configurability of a narrow linewidth laser.

Dual-comb spectroscopy (DCS) offers high sensitivity and wide spectral coverage without the need for bulky spectrometers or mechanical moving parts. And DCS in the mid-infrared (mid-IR) is of keen interest because of inherently strong molecular spectroscopic signatures in these bands. We report GHz-resolution mid-IR DCS of methane and ethane that is derived from counter-propagating (CP) soliton microcombs in combination with interleaved difference frequency generation. Because all four combs required to generate the two mid-IR combs rely upon stability derived from a single high-Q microcavity, the system architecture is both simplified and does not require external frequency locking. Methane and ethane spectra are measured over intervals as short as 0.5 ms, a time scale that can be further reduced using a different CP soliton arrangement. Also, tuning of spectral resolution on demand is demonstrated. Although at an early phase of development, the results are a step towards mid-IR gas sensors with chip-based architectures for chemical threat detection, breath analysis, combustion studies, and outdoor observation of trace gases. Chip-based architectures for mid-infrared gas sensing could enable many applications. In this direction, the authors demonstrate a microcomb-based dual-comb spectroscopy sensor with GHz resolution in the mid-IR band, with stability completely determined by a single high-Q microresonator.

Determination of laser frequency with high resolution under continuous and abrupt tuning conditions is important for sensing, spectroscopy, and communications. We show that a single microresonator provides rapid and broadband measurement of optical frequencies with a relative frequency precision comparable to that of conventional dual-frequency comb systems. Dual-locked counterpropagating solitons having slightly different repetition rates were used to implement a vernier spectrometer, which enabled characterization of laser tuning rates as high as 10 terahertz per second, broadly step-tuned lasers, multiline laser spectra, and molecular absorption lines. Besides providing a considerable technical simplification through the dual-locked solitons and enhanced capability for measurement of arbitrarily tuned sources, our results reveal possibilities for chip-scale spectrometers that exceed the performance of tabletop grating and interferometer-based devices.

Numerous modern technologies are reliant on the low-phase noise and exquisite timing stability of microwave signals. Substantial progress has been made in the field of microwave photonics, whereby low-noise microwave signals are generated by the down-conversion of ultrastable optical references using a frequency comb 1 – 3 . Such systems, however, are constructed with bulk or fibre optics and are difficult to further reduce in size and power consumption. In this work we address this challenge by leveraging advances in integrated photonics to demonstrate low-noise microwave generation via two-point optical frequency division 4 , 5 . Narrow-linewidth self-injection-locked integrated lasers 6 , 7 are stabilized to a miniature Fabry–Pérot cavity 8 , and the frequency gap between the lasers is divided with an efficient dark soliton frequency comb 9 . The stabilized output of the microcomb is photodetected to produce a microwave signal at 20 GHz with phase noise of −96 dBc Hz −1 at 100 Hz offset frequency that decreases to −135 dBc Hz −1 at 10 kHz offset—values that are unprecedented for an integrated photonic system. All photonic components can be heterogeneously integrated on a single chip, providing a significant advance for the application of photonics to high-precision navigation, communication and timing systems. We leverage advances in integrated photonics to generate low-noise microwaves with an optical frequency division architecture that can be low power and chip integrated.

Compact, low-noise microwave sources are required throughout a wide range of application areas including frequency metrology, wireless-communications and airborne radar systems. And the photonic generation of microwaves using soliton microcombs offers a path towards integrated, low noise microwave signal sources. In these devices, a so called quiet-point of operation has been shown to reduce microwave frequency noise. Such operation decouples pump frequency noise from the soliton’s motion by balancing the Raman self-frequency shift with dispersive-wave recoil. Here, we explore the limit of this noise suppression approach and reveal a fundamental noise mechanism associated with fluctuations of the dispersive wave frequency. At the same time, pump noise reduction by as much as 36 dB is demonstrated. This fundamental noise mechanism is expected to impact microwave noise (and pulse timing jitter) whenever solitons radiate into dispersive waves belonging to different spatial mode families. Here the authors explore the noise spectrum of soliton microcomb when the pump is decoupled from the solitons motion by balancing the Raman shift with the emitted dispersive wave. Based on the analysis of the phase noise and the soliton repetition rate, they identify the uncorrelated thermal fluctuations as underlying mechanism.

Multi-omics data are increasingly being gathered for investigations of complex diseases such as cancer. However, high dimensionality, small sample size, and heterogeneity of different omics types pose huge challenges to integrated analysis. In this paper, we evaluate two network-based approaches for integration of multi-omics data in an application of clinical outcome prediction of neuroblastoma. We derive Patient Similarity Networks (PSN) as the first step for individual omics data by computing distances among patients from omics features. The fusion of different omics can be investigated in two ways: the network-level fusion is achieved using Similarity Network Fusion algorithm for fusing the PSNs derived for individual omics types; and the feature-level fusion is achieved by fusing the network features obtained from individual PSNs. We demonstrate our methods on two high-risk neuroblastoma datasets from SEQC project and TARGET project. We propose Deep Neural Network and Machine Learning methods with Recursive Feature Elimination as the predictor of survival status of neuroblastoma patients. Our results indicate that network-level fusion outperformed feature-level fusion for integration of different omics data whereas feature-level fusion is more suitable incorporating different feature types derived from same omics type. We conclude that the network-based methods are capable of handling heterogeneity and high dimensionality well in the integration of multi-omics.