Explore the vast range of titles available.

Two-dimensional transition-metal dichalcogenides （WS2 and SnS2） have recently joined the family of energy storage materials （for lithium-ion batteries and supercapacitors） as a result of their favorable ion intercalation. So far, challenges in the synthesis of phase-pure WS2, restacking between WS2 nanosheets, low electronic conductivity, and the brittle nature of WS2, severely limit its use Li-ion battery application. Herein, we develop a facile low temperature solution sulfuration process to improve battery performance dramatically. The sulfuration process is demonstrated to be effective in converting WO3 impurities to WS2, and in repairing the sulfur vacancies, to improve cyclability and rate capability. Lithium-ion battery measurements demonstrate that the stable capacity of the WS2 anode could be enhanced by 48.4% via sulfuration reprocessing, i.e., from 381.7 to 566.8 rnAh/g at a relatively high current density of 0.8 A/g after 50 cycles. We further show that the sulfuration process can be readily extended to other dichalcogenides, and may provide a class of versatile electrode materials for lithium-ion batteries with improved electrochemical characteristics.

Black phosphorus (BP), a promising two-dimensional layer material, has attracted increasing attention due to its high carrier mobility, thickness-dependent tunable bandgap, in-plane anisotropy, and other advantageous characteristics. Because of these excellent characteristics, BP has been considered for applications in optics, electronics, optoelectronics, sensors, and energy storage. However, early studies found that BP has high chemical activity due to the lone pair electrons of P atoms on the surface and edges, resulting in rapid degradation under ambient conditions and limiting many applications. Recently, these thorny issues have been alleviated through superior physical and chemical passivation techniques, and passivated BP can be used in various devices under ambient and water conditions with excellent performance over a long period. This review, highlights the critical problems addressed in solving the serious instability of BP in a harsh environment by effective passivation technology. These unique strategies can provide more researchers with a fundamental study of the fascinating properties of BP. Finally, we found that passivated BP not only showed good stability under ambient conditions but also exhibited excellent performance compared with the original BP. Therefore, it is anticipated that this overview can contribute to the application of BP.

Tungsten Disulfide (WS 2 ) is considered to be a promising Hydrogen Evolution Reaction (HER) catalyst to replace noble metals (such as Pt and Pd). However, progress in WS 2 research has been impeded by the inertness of the in-plane atoms during HER. Although it is known that microstructure and defects strongly affect the electrocatalytic performance of catalysts, the understanding of such related catalytic origin still remains a challenge. Here, we combined a one-pot synthesis method with wet chemical etching to realize controlled cobalt doping and tunable morphology in WS 2 . The etched products, which composed of porous WS 2 , CoS 2 and a spot of WO x , show a low overpotential and small Tafel slope in 0.5 M H 2 SO 4 solution. The overpotential could be optimized to −134 mV (at 10 mA/cm 2 ) with a Tafel slope of 76 mV/dec at high loadings (5.1 mg/cm 2 ). Under N 2 adsorption analysis, the treated WS 2 sample shows an increase in macropore (>50 nm) distributions, which may explain the increase inefficiency of HER activity. We applied electron holography to analyze the catalytic origin and found a low surface electrostatic potential in Co-doped region. This work may provide further understanding of the HER mechanism at the nanometer scale, and open up new avenues for designing catalysts based on other transition metal dichalcogenides for highly efficient HER.

Gas sensors play a pivotal role in environmental monitoring, with NO2 sensors standing out due to their exceptional selectivity and sensitivity. Yet, a prevalent challenge remains: the prolonged recovery time of many sensors, often spanning hundreds of seconds, compromises efficiency and undermines the precision of continuous detection. This paper introduces an efficient NO2 sensor using TeO2 nanowires, offering significantly reduced recovery times. The TeO2 nanowires, prepared through a straightforward thermal oxidation process, exhibit a unique yet smooth surface. The structural characterizations confirm the formation of pure-phase TeO2 after the anneal oxidation. TeO2 nanowires are extremely sensitive to NO2 gas, and the maximum response (defined as the ratio of resistance in the air to that under the target gas) to NO2 (10 ppm) is 1.559. In addition, TeO2 nanowire-based sensors can return to the initial state in about 6–7 s at 100 °C. The high sensitivity can be attributed to the length–diameter rate, which adsorbs more NO2 to facilitate the electron transfer. The fast recovery is due to the smooth surface without pores on TeO2 nanowires, which may release NO2 quickly after stopping the gas supply. The present approach for sensing TeO2 nanowires can be extended to other sensor systems as an efficient, accurate, and low-priced tactic to enhance sensor performance.

The field of valleytronics has promised greater control of electronic and spintronic systems with an additional valley degree of freedom. However, conventional and two-dimensional valleytronic systems pose practical challenges in the utilization of this valley degree of freedom. Here we show experimental evidences of the valley effect in a bulk, ambient, and bias-free model system of Tin(II) sulfide. We elucidate the direct access and identification of different sets of valleys, based primarily on the selectivity in absorption and emission of linearly polarized light by optical reflection/transmission and photoluminescence measurements, and demonstrate strong optical dichroic anisotropy of up to 600% and nominal polarization degrees of up to 96% for the two valleys with band-gap values 1.28 and 1.48 eV, respectively; the ease of valley selection further manifested in their non-degenerate nature. Such discovery enables a new platform for better access and control of valley polarization. Valleytronics leverages the valley degree of freedom to engineer light-matter interaction. Here, the authors demonstrate a room temperature, bias-free valley effect in bulk SnS by means of spectroscopic measurements, previously unattainable using atomically thin transition metal dichalcogenides.

Black phosphorus (BP) is a unique two-dimensional material with excellent conductivity, and a widely tunable bandgap. In recent years, its application in the field of energy has attracted extensive attention, in terms of energy storage, due to its high theoretical specific capacity and excellent conductivity, black phosphorus is widely used as electrode material in battery and supercapacitors, while for energy generating, it has been also used as photocatalyst and electrocatalysts to split water and produce hydrogen. Black phosphorus demonstrates even better stability and catalytic performance through further construction, doping, or heterojunction. This review briefly summarizes the latest research progress of black phosphorus and its composites in energy preparation and storage, as well as ammonia nitrogen fixation, and also looks into the possible development directions in the future.

Surface-enhanced Raman Scattering (SERS) enables ultrasensitive detection but is often hindered by biocompatibility and sustainability concerns due to its reliance on noble metal substrates. To overcome these limitations, we develop a semiconductor-based SERS platform utilizing ultrathin tungsten trioxide (WO3) nanofilms synthesized via a facile annealing process on fluorine-doped tin oxide (FTO). This system achieves an impressive Raman enhancement factor of 1.36 × 106, enabling ultrasensitive detection of rhodamine 6G (R6G) and methylene blue (MB) at ultralow concentrations, surpassing conventional metal-based SERS platforms. It is further suggested that this is a substrate that can be easily coupled to other metals. An application for the detection of adenine molecules is realized through layered WO3-Au NPs composites, where embedded gold nanoparticles act as plasma “hot spots” to amplify the sensitivity. Density functional theory (DFT) calculations and band structure analysis confirm that synergistic interface charge transfer and naturally formed oxygen vacancies enhance performance. By combining semiconductor compatibility with other metal amplification, this WO3-based SERS platform offers a sustainable and high-performance alternative to conventional substrates, paving the way for environmentally friendly and scalable Raman sensing technologies.

Treatment of organic wastewater is still a difficult problem to solve. In this paper, Cu-doped SnSe powder was synthesized by a convenient and efficient hydrothermal method. Meanwhile, the degradation effect of different doping concentrations of SnSe on methylene blue was investigated. It was found that at low doping concentrations, the degradation effect on methylene blue was not obvious because Cu was dissolved in the lattice of the SnSe matrix at low concentrations. As the doping concentration increased, SnSe changed from a layered structure to a nanocluster structure with reduced particle size, and a mixed phase of SnSe and Cu2SnSe4 appeared. In fact, the degradation effect on methylene blue was significantly enhanced, and we found that the catalytic degradation effect on methylene blue was best at a doping concentration of 10 wt.%.

The search for van der Waals (vdW) multiferroic materials has been challenging but also holds great potential for the next-generation multifunctional nanoelectronics. The group-IV monochalcogenide, with an anisotropic puckered structure and an intrinsic in-plane polarization at room temperature, manifests itself as a promising candidate with coupled ferroelectric and ferroelastic order as the basis for multiferroic behavior. Unlike the intrinsic centrosymmetric AB stacking, we demonstrate a multiferroic phase of tin selenide (SnSe), where the inversion symmetry breaking is maintained in AA-stacked multilayers over a wide range of thicknesses. We observe that an interlayer-sliding-induced out-of-plane (OOP) ferroelectric polarization couples with the in-plane (IP) one, making it possible to control out-of-plane polarization via in-plane electric field and vice versa. Notably, thickness scaling yields a sub-0.3 V ferroelectric switching, which promises future low-power-consumption applications. Furthermore, coexisting armchair- and zigzag-like structural domains are imaged under electron microscopy, providing experimental evidence for the degenerate ferroelastic ground states theoretically predicted. Non-centrosymmetric SnSe, as the first layered multiferroic at room temperature, provides a novel platform not only to explore the interactions between elementary excitations with controlled symmetries, but also to efficiently tune the device performance via external electric and mechanical stress. The authors observe out-of-plane ferroelectric polarization induced by interlayer sliding in a multiferroic van der Waals semiconductor. The switching voltage scales down to 0.3 V at room temperature, which promises low-power device applications.

In recent decades, low-dimensional nanodevices have shown great potential to extend Moore’s Law. The n-type semiconductors already have several candidate materials for semiconductors with high carrier transport and device performance, but the development of their p-type counterparts remains a challenge. As a p-type narrow bandgap semiconductor, tellurium nanostructure has outstanding electrical properties, controllable bandgap, and good environmental stability. With the addition of methods for synthesizing various emerging tellurium nanostructures with controllable size, shape, and structure, tellurium nanomaterials show great application prospects in next-generation electronics and optoelectronic devices. For tellurium-based nanomaterials, scanning electron microscopy and transmission electron microscopy are the main characterization methods for their morphology. In this paper, the controllable synthesis methods of different tellurium nanostructures are reviewed, and the latest progress in the application of tellurium nanostructures is summarized. The applications of tellurium nanostructures in electronics and optoelectronics, including field-effect transistors, photodetectors, and sensors, are highlighted. Finally, the future challenges, opportunities, and development directions of tellurium nanomaterials are prospected.