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Atomic layer deposition (ALD) is an ultra-thin film deposition technique that has found many applications owing to its distinct abilities. They include uniform deposition of conformal films with controllable thickness, even on complex three-dimensional surfaces, and can improve the efficiency of electronic devices. This technology has attracted significant interest both for fundamental understanding how the new functional materials can be synthesized by ALD and for numerous practical applications, particularly in advanced nanopatterning for microelectronics, energy storage systems, desalinations, catalysis and medical fields. This review introduces the progress made in ALD, both for computational and experimental methodologies, and provides an outlook of this emerging technology in comparison with other film deposition methods. It discusses experimental approaches and factors that affect the deposition and presents simulation methods, such as molecular dynamics and computational fluid dynamics, which help determine and predict effective ways to optimize ALD processes, hence enabling the reduction in cost, energy waste and adverse environmental impacts. Specific examples are chosen to illustrate the progress in ALD processes and applications that showed a considerable impact on other technologies.

Two dimensional (2D) materials have offered unique electrical, chemical, mechanical and physical properties over the past decade owing to their ultrathin, flexible, and multilayer structure. These layered materials are being used in numerous electronic devices for various applications, and this review will specifically focus on the resistive random access memories (RRAMs) based on 2D materials and their nanocomposites. This study presents the device structures, conduction mechanisms, resistive switching properties, fabrication technologies, challenges and future aspects of 2D-materials-based RRAMs. Graphene, derivatives of graphene and MoS 2 have been the major contributors among 2D materials for the application of RRAMs; however, other members of this family such as hBN, MoSe 2 , WS 2 and WSe 2 have also been inspected more recently as the functional materials of nonvolatile RRAM devices. Conduction in these devices is usually dominated by either the penetration of metallic ions or migration of intrinsic species. Most prominent advantages offered by RRAM devices based on 2D materials include fast switching speed (<10 ns), less power losses (10 pJ), lower threshold voltage (<1 V) long retention time (>10 years), high electrical endurance (>10 8 voltage cycles) and extended mechanical robustness (500 bending cycles). Resistive switching properties of 2D materials have been further enhanced by blending them with metallic nanoparticles, organic polymers and inorganic semiconductors in various forms.

The large and vivid field of intermetallic compounds in catalysis is reviewed to identify necessities, strategies and new developments making use of the advantageous catalytic properties of intermetallic compounds. Since recent reviews summarizing contributions in heterogeneous catalysis as well as electrocatalysis are available, this contribution is not aiming at a comprehensive literature review. To introduce the field, first the interesting nature of intermetallic compounds is elaborated - including possibilities as well as requirements to address catalytic questions. Subsequently, this review focuses on exciting developments and example success stories of intermetallic compounds in catalysis. Since many of these are based on recent advances in synthesis, a short overview of synthesis and characterisation is included. Thus, this contribution aims to be an introduction to the newcomer as well as being helpful to the experienced researcher by summarising the different approaches. Selected examples from literature are chosen to illustrate the versatility of intermetallic compounds in heterogeneous catalysis where the emphasis is on developments since the last comprehensive review in the field. The vivid field of intermetallic compounds is regarded from a birds-eye perspective - including addressing catalytic challenges, high-performance materials and synthesis.

The growing demand of flexible electronic devices is increasing the requirements of their power sources. The effect of bending in thin-film batteries is still not well understood. Here, we successfully developed a high active area flexible all-solid-state battery as a model system that consists of thin-film layers of Li 4 Ti 5 O 12 , LiPON, and Lithium deposited on a novel flexible ceramic substrate. A systematic study on the bending state and performance of the battery is presented. The battery withstands bending radii of at least 14 mm achieving 70% of the theoretical capacity. Here, we reveal that convex bending has a positive effect on battery capacity showing an average increase of 5.5%, whereas concave bending decreases the capacity by 4% in contrast with recent studies. We show that the change in capacity upon bending may well be associated to the Li-ion diffusion kinetic change through the electrode when different external forces are applied. Finally, an encapsulation scheme is presented allowing sufficient bending of the device and operation for at least 500 cycles in air. The results are meant to improve the understanding of the phenomena present in thin-film batteries while undergoing bending rather than showing improvements in battery performance and lifetime.

The performance improvement of conventional CdTe solar cells is mainly limited by doping concentration and minority carrier life time. Alloying CdTe with an isovalent element changes its properties, for example its band gap and behaviour of dopants, which has a significant impact on its performance as a solar cell absorber. In this work, the structural, optical, and electronic properties of CdTe1-xSex films are examined for different Se concentrations. The band gap of this compound changes with composition with a minimum of 1.40 eV for x = 0.3. We show that with increasing x, the lattice constant of CdTe1-xSex decreases, which can influence the solubility of dopants. We find that alloying CdTe with Se changes the effect of Cu doping on the p-type conductivity in CdTe1-xSex, reducing the achievable charge carrier concentration with increasing x. Using a front surface CdTe1-xSex layer, compositional, structural and electronic grading is introduced to solar cells. The efficiency is increased, mostly due to an increase in the short-circuit current density caused by a combination of lower band gap and a better interface between the absorber and window layer, despite a loss in the open-circuit voltage caused by the lower band gap and reduced charge carrier concentration.

Cu(In,Ga)Se 2 -based solar cells have reached efficiencies close to 23%. Further knowledge-driven improvements require accurate determination of the material properties. Here, we present refractive indices for all layers in Cu(In,Ga)Se 2 solar cells with high efficiency. The optical bandgap of Cu(In,Ga)Se 2 does not depend on the Cu content in the explored composition range, while the absorption coefficient value is primarily determined by the Cu content. An expression for the absorption spectrum is proposed, with Ga and Cu compositions as parameters. This set of parameters allows accurate device simulations to understand remaining absorption and carrier collection losses and develop strategies to improve performances.

The design and fabrication of nanostructured materials to control both thermal and electrical properties are demonstrated for high-performance thermoelectric conversion. We have focused on silicon (Si) because it is an environmentally friendly and ubiquitous element. High bulk thermal conductivity of Si limits its potential as a thermoelectric material. The thermal conductivity of Si has been reduced by introducing grains, or wires, yet a further reduction is required while retaining a high electrical conductivity. We have designed two different nanostructures for this purpose. One structure is connected Si nanodots (NDs) with the same crystal orientation. The phonons scattering at the interfaces of these NDs occurred and it depended on the ND size. As a result of phonon scattering, the thermal conductivity of this nanostructured material was below/close to the amorphous limit. The other structure is Si films containing epitaxially grown Ge NDs. The Si layer imparted high electrical conductivity, while the Ge NDs served as phonon scattering bodies reducing thermal conductivity drastically. This work gives a methodology for the independent control of electron and phonon transport using nanostructured materials. This can bring the realization of thermoelectric Si-based materials that are compatible with large scale integrated circuit processing technologies.

Surface modification techniques have been developed significantly in the last couple of decades for enhanced tribological performance of artificial hip implants. Surface modification techniques improve biological, chemical and mechanical properties of implant surfaces. Some of the most effective techniques, namely surface texturing, surface coating, and surface grafting, are applied to reduce the friction and wear of artificial implants. This article reviews the status of the developments of surface modification techniques and their effects on commonly used artificial joint implants. This study focused only on artificial hip joint prostheses research of the last 10 years. A total of 27 articles were critically reviewed and categorized according to surface modification technique. The literature reveals that modified surfaces exhibit reduced friction and enhanced wear resistance of the contact surfaces. However, the wear rates are still noticeable in case of surface texturing and surface coating. The associated vortex flow aids to release entrapped wear debris and thus increase the wear particles generation in case of textured surfaces. The earlier delamination of coating materials due to poor adhesion and graphitization transformation has limited the use of coating techniques. Moreover, the produced wear debris has adverse effects on biological fluid. Conversely, the surface grafting technique provides phospholipid like layer that exhibited lower friction and almost zero wear rates even after a longer period of friction and wear test. The findings suggest that further investigations are required to identify the role of surface grafting on film formation and heat resistance ability under physiological hip joint conditions for improved performance and longevity of hip implants.

Tribological coatings made of MoS 2 and WSe 2 phases and their corresponding combinations with tungsten carbide (WC) were prepared by non-reactive magnetron sputtering of individual targets of similar composition. A comparative tribological analysis of these multiphase coatings was done in both ambient air (30-40% relative humidity, RH) and dry nitrogen (RH<7%) environments using the same tribometer and testing conditions. A nanostructural study using advanced transmission electron microscopy of the initial coatings and examination of the counterfaces after the friction test using different analytical tools helped to elucidate what governs the tribological behavior for each type of environment. This allowed conclusions to be made about the influence of the coating microstructure and composition on the tribological response. The best performance obtained with a WSe x film (specific wear rate of 2 × 10 −8  mm 3  N -1 m -1 and a friction coefficient of 0.03-0.05) was compared with that of the well-established MoS 2 lubricant material.

In this study, we developed a high-performance extended-gate ion-sensitive field-effect transistor (EG-ISFET) sensor on a flexible polyethylene naphthalate (PEN) substrate. The EG-ISFET sensor comprises a tin dioxide (SnO 2 ) extended gate, which acts as a detector, and an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) for a transducer. In order to self-amplify the sensitivity of the pH sensors, we designed a uniquely-structured a-IGZO TFT transducer with a high-k engineered top gate insulator consisting of a silicon dioxide/tantalum pentoxide (SiO 2 /Ta 2 O 5 ) stack, a floating layer under the channel, and a control gate coplanar with the channel. The SiO 2 /Ta 2 O 5 stacked top gate insulator and in-plane control gate significantly contribute to capacitive coupling, enabling the amplification of sensitivity to be enlarged compared to conventional dual-gate transducers. For a pH sensing method suitable for EG-ISFET sensors, we propose an in-plane control gate (IG) sensing mode, instead of conventional single-gate (SG) or dual-gate (DG) sensing modes. As a result, a pH sensitivity of 2364 mV/pH was achieved at room temperature - this is significantly superior to the Nernstian limit (59.15 mV/pH at room temperature). In addition, we found that non-ideal behavior was improved in hysteresis and drift measurements. Therefore, the proposed transparent EGISFFET sensor with an IG sensing mode is expected to become a promising platform for flexible and wearable biosensing applications.