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Nanostructure design for drastic reduction of thermal conductivity while preserving high electrical conductivity
by
Nakamura, Yoshiaki
in
10 Engineering and Structural materials
/ 101 Self-assembly / Self-organized materials
/ 201 Electronics / Semiconductor / TCOs
/ 206 Energy conversion / transport / storage / recovery
/ 210 Thermoelectronics / Thermal transport / insulators
/ 212 Surface and interfaces
/ 302 Crystallization / Heat treatment / Crystal growth
/ 306 Thin film / Coatings
/ Amorphous materials
/ Crystal structure
/ Electrical properties
/ Electrical resistivity
/ electron transport
/ Epitaxial growth
/ Focus on New Materials Science and Element Strategy
/ Germanium
/ Heat conductivity
/ Heat transfer
/ Integrated circuits
/ Large scale integration
/ molecular beam epitaxy
/ Nanodots
/ Nanostructure
/ Nanostructured materials
/ nanostructures
/ phono transport
/ Phonons
/ Reduction
/ Review
/ Scattering
/ silicon
/ Silicon films
/ Thermal conductivity
/ Thermoelectric materials
2018
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Nanostructure design for drastic reduction of thermal conductivity while preserving high electrical conductivity
by
Nakamura, Yoshiaki
in
10 Engineering and Structural materials
/ 101 Self-assembly / Self-organized materials
/ 201 Electronics / Semiconductor / TCOs
/ 206 Energy conversion / transport / storage / recovery
/ 210 Thermoelectronics / Thermal transport / insulators
/ 212 Surface and interfaces
/ 302 Crystallization / Heat treatment / Crystal growth
/ 306 Thin film / Coatings
/ Amorphous materials
/ Crystal structure
/ Electrical properties
/ Electrical resistivity
/ electron transport
/ Epitaxial growth
/ Focus on New Materials Science and Element Strategy
/ Germanium
/ Heat conductivity
/ Heat transfer
/ Integrated circuits
/ Large scale integration
/ molecular beam epitaxy
/ Nanodots
/ Nanostructure
/ Nanostructured materials
/ nanostructures
/ phono transport
/ Phonons
/ Reduction
/ Review
/ Scattering
/ silicon
/ Silicon films
/ Thermal conductivity
/ Thermoelectric materials
2018
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Nanostructure design for drastic reduction of thermal conductivity while preserving high electrical conductivity
by
Nakamura, Yoshiaki
in
10 Engineering and Structural materials
/ 101 Self-assembly / Self-organized materials
/ 201 Electronics / Semiconductor / TCOs
/ 206 Energy conversion / transport / storage / recovery
/ 210 Thermoelectronics / Thermal transport / insulators
/ 212 Surface and interfaces
/ 302 Crystallization / Heat treatment / Crystal growth
/ 306 Thin film / Coatings
/ Amorphous materials
/ Crystal structure
/ Electrical properties
/ Electrical resistivity
/ electron transport
/ Epitaxial growth
/ Focus on New Materials Science and Element Strategy
/ Germanium
/ Heat conductivity
/ Heat transfer
/ Integrated circuits
/ Large scale integration
/ molecular beam epitaxy
/ Nanodots
/ Nanostructure
/ Nanostructured materials
/ nanostructures
/ phono transport
/ Phonons
/ Reduction
/ Review
/ Scattering
/ silicon
/ Silicon films
/ Thermal conductivity
/ Thermoelectric materials
2018
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Nanostructure design for drastic reduction of thermal conductivity while preserving high electrical conductivity
Journal Article
Nanostructure design for drastic reduction of thermal conductivity while preserving high electrical conductivity
2018
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Overview
The design and fabrication of nanostructured materials to control both thermal and electrical properties are demonstrated for high-performance thermoelectric conversion. We have focused on silicon (Si) because it is an environmentally friendly and ubiquitous element. High bulk thermal conductivity of Si limits its potential as a thermoelectric material. The thermal conductivity of Si has been reduced by introducing grains, or wires, yet a further reduction is required while retaining a high electrical conductivity. We have designed two different nanostructures for this purpose. One structure is connected Si nanodots (NDs) with the same crystal orientation. The phonons scattering at the interfaces of these NDs occurred and it depended on the ND size. As a result of phonon scattering, the thermal conductivity of this nanostructured material was below/close to the amorphous limit. The other structure is Si films containing epitaxially grown Ge NDs. The Si layer imparted high electrical conductivity, while the Ge NDs served as phonon scattering bodies reducing thermal conductivity drastically. This work gives a methodology for the independent control of electron and phonon transport using nanostructured materials. This can bring the realization of thermoelectric Si-based materials that are compatible with large scale integrated circuit processing technologies.
Publisher
Taylor & Francis,Taylor & Francis Ltd,Taylor & Francis Group
Subject
10 Engineering and Structural materials
/ 101 Self-assembly / Self-organized materials
/ 201 Electronics / Semiconductor / TCOs
/ 206 Energy conversion / transport / storage / recovery
/ 210 Thermoelectronics / Thermal transport / insulators
/ 302 Crystallization / Heat treatment / Crystal growth
/ Focus on New Materials Science and Element Strategy
/ Nanodots
/ Phonons
/ Review
/ silicon
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