Explore the vast range of titles available.

Topology describes properties that remain unaffected by smooth distortions. Its main hallmark is the emergence of edge states localized at the boundary between regions characterized by distinct topological invariants. Because their properties are inherited from the topology of the bulk, these edge states present a strong immunity to distortions of the underlying architecture. This feature offers new opportunities for robust trapping of light in nano- and micrometre-scale systems subject to fabrication imperfections and environmentally induced deformations. Here, we report lasing in such topological edge states of a one-dimensional lattice of polariton micropillars that implements an orbital version of the Su–Schrieffer–Heeger Hamiltonian. We further demonstrate that lasing in these states persists under local deformations of the lattice. These results open the way to the implementation of chiral lasers in systems with broken time-reversal symmetry and, when combined with polariton interactions, to the study of nonlinear phenomena in topological photonics. Topologically protected lasing is reported in a lattice of polariton micropillars.

Driven by narrow-linewidth bench-top lasers, coherent optical systems spanning optical communications, metrology and sensing provide unrivalled performance. To transfer these capabilities from the laboratory to the real world, a key missing ingredient is a mass-produced integrated laser with superior coherence. Here, we bridge conventional semiconductor lasers and coherent optical systems using CMOS-foundry-fabricated microresonators with a high Q factor of over 260 million and finesse over 42,000. A five-orders-of-magnitude noise reduction in the pump laser is demonstrated, enabling a frequency noise of 0.2 Hz2 Hz−1 to be achieved in an electrically pumped integrated laser, with a corresponding short-term linewidth of 1.2 Hz. Moreover, the same configuration is shown to relieve the dispersion requirements for microcomb generation that have handicapped certain nonlinear platforms. The simultaneous realization of this high Q factor, highly coherent lasers and frequency combs using foundry-based technologies paves the way for volume manufacturing of a wide range of coherent optical systems.Using CMOS-ready ultra-high-Q microresonators, a highly coherent electrically pumped integrated laser with frequency noise of 0.2 Hz2 Hz−1, corresponding to a short-term linewidth of 1.2 Hz, is demonstrated. The device configuration is also found to relieve the dispersion requirements for microcomb generation that have limited certain nonlinear platforms.

Traditionally, topographic surveying in earth sciences requires high financial investments, elaborate logistics, complicated training of staff and extensive data processing. Recently, off-the-shelf drones with optical sensors already reduced the costs for obtaining a high-resolution dataset of an Earth surface considerably. Nevertheless, costs and complexity associated with topographic surveying are still high. In 2020, Apple Inc. released the iPad Pro 2020 and the iPhone 12 Pro with novel build-in LiDAR sensors. Here we investigate the basic technical capabilities of the LiDAR sensors and we test the application at a coastal cliff in Denmark. The results are compared to state-of-the-art Structure from Motion Multi-View Stereo (SfM MVS) point clouds. The LiDAR sensors create accurate high-resolution models of small objects with a side length > 10 cm with an absolute accuracy of ± 1 cm. 3D models with the dimensions of up to 130 × 15 × 10 m of a coastal cliff with an absolute accuracy of ± 10 cm are compiled. Overall, the versatility in handling outweighs the range limitations, making the Apple LiDAR devices cost-effective alternatives to established techniques in remote sensing with possible fields of application for a wide range of geo-scientific areas and teaching.

Photonic integrated circuits are widely used in applications such as telecommunications and data-centre interconnects 1 – 5 . However, in optical systems such as microwave synthesizers 6 , optical gyroscopes 7 and atomic clocks 8 , photonic integrated circuits are still considered inferior solutions despite their advantages in size, weight, power consumption and cost. Such high-precision and highly coherent applications favour ultralow-noise laser sources to be integrated with other photonic components in a compact and robustly aligned format—that is, on a single chip—for photonic integrated circuits to replace bulk optics and fibres. There are two major issues preventing the realization of such envisioned photonic integrated circuits: the high phase noise of semiconductor lasers and the difficulty of integrating optical isolators directly on-chip. Here we challenge this convention by leveraging three-dimensional integration that results in ultralow-noise lasers with isolator-free operation for silicon photonics. Through multiple monolithic and heterogeneous processing sequences, direct on-chip integration of III–V gain medium and ultralow-loss silicon nitride waveguides with optical loss around 0.5 decibels per metre are demonstrated. Consequently, the demonstrated photonic integrated circuit enters a regime that gives rise to ultralow-noise lasers and microwave synthesizers without the need for optical isolators, owing to the ultrahigh-quality-factor cavity. Such photonic integrated circuits also offer superior scalability for complex functionalities and volume production, as well as improved stability and reliability over time. The three-dimensional integration on ultralow-loss photonic integrated circuits thus marks a critical step towards complex systems and networks on silicon. Three-dimensional integration of distributed-feedback lasers and ultralow-loss silicon nitride waveguides results in ultralow-noise lasers without the need for optical isolators.

Integrated photonics has profoundly affected a wide range of technologies underpinning modern society 1 – 4 . The ability to fabricate a complete optical system on a chip offers unrivalled scalability, weight, cost and power efficiency 5 , 6 . Over the last decade, the progression from pure III–V materials platforms to silicon photonics has significantly broadened the scope of integrated photonics, by combining integrated lasers with the high-volume, advanced fabrication capabilities of the commercial electronics industry 7 , 8 . Yet, despite remarkable manufacturing advantages, reliance on silicon-based waveguides currently limits the spectral window available to photonic integrated circuits (PICs). Here, we present a new generation of integrated photonics by directly uniting III–V materials with silicon nitride waveguides on Si wafers. Using this technology, we present a fully integrated PIC at photon energies greater than the bandgap of silicon, demonstrating essential photonic building blocks, including lasers, amplifiers, photodetectors, modulators and passives, all operating at submicrometre wavelengths. Using this platform, we achieve unprecedented coherence and tunability in an integrated laser at short wavelength. Furthermore, by making use of this higher photon energy, we demonstrate superb high-temperature performance and kHz-level fundamental linewidths at elevated temperatures. Given the many potential applications at short wavelengths, the success of this integration strategy unlocks a broad range of new integrated photonics applications.  Fully integrated photonics at submicrometre wavelengths is realized by a heterogeneous integration technology.

Topological physics provides a robust framework for strategically controlling wave confinement and propagation dynamics. However, current implementations have been restricted to the limited design parameter space defined by passive topological structures. Active systems provide a more general framework where different fundamental symmetry paradigms, such as those arising from non-Hermiticity and nonlinear interaction, can generate a new landscape for topological physics and its applications. Here, we bridge this gap and present an experimental investigation of an active topological photonic system, demonstrating a topological hybrid silicon microlaser array respecting the charge-conjugation symmetry. The created new symmetry features favour the lasing of a protected zero mode, where robust single-mode laser action in the desired state prevails even with intentionally introduced perturbations. The demonstrated microlaser is hybrid implemented on a silicon-on-insulator substrate, and is thereby readily suitable for integrated silicon photonics with applications in optical communication and computing. Topological effects, first observed in condensed matter physics, are now also studied in optical systems, extending the scope to active topological devices. Here, Zhao et al. combine topological physics with non-Hermitian photonics, demonstrating a topological microlaser on a silicon platform.

The prospects for light-emitting diodes and lasers based on perovskite materials are reviewed. The field of solution-processed semiconductors has made great strides; however, it has yet to enable electrically driven lasers. To achieve this goal, improved materials are required that combine efficient (>50% quantum yield) radiative recombination under high injection, large and balanced charge-carrier mobilities in excess of 10 cm 2 V −1 s −1 , free-carrier densities greater than 10 17 cm −3 and gain coefficients exceeding 10 4 cm −1 . Solid-state perovskites are — in addition to galvanizing the field of solar electricity — showing great promise in photonic sources, and may be the answer to realizing solution-cast laser diodes. Here, we discuss the properties of perovskites that benefit light emission, review recent progress in perovskite electroluminescent diodes and optically pumped lasers, and examine the remaining challenges in achieving continuous-wave and electrically driven lasing.

Silicon nitride (SiN) waveguides with ultra-low optical loss enable integrated photonic applications including low noise, narrow linewidth lasers, chip-scale nonlinear photonics, and microwave photonics. Lasers are key components to SiN photonic integrated circuits (PICs), but are difficult to fully integrate with low-index SiN waveguides due to their large mismatch with the high-index III-V gain materials. The recent demonstration of multilayer heterogeneous integration provides a practical solution and enabled the first-generation of lasers fully integrated with SiN waveguides. However, a laser with high device yield and high output power at telecommunication wavelengths, where photonics applications are clustered, is still missing, hindered by large mode transition loss, non-optimized cavity design, and a complicated fabrication process. Here, we report high-performance lasers on SiN with tens of milliwatts output power through the SiN waveguide and sub-kHz fundamental linewidth, addressing all the aforementioned issues. We also show Hertz-level fundamental linewidth lasers are achievable with the developed integration techniques. These lasers, together with high- Q SiN resonators, mark a milestone towards a fully integrated low-noise silicon nitride photonics platform. This laser should find potential applications in LIDAR, microwave photonics and coherent optical communications. Achieving high output power and low noise integrated lasers is a major challenge. Here the authors experimentally demonstrate integrated lasers from a Si/SiN heterogeneous platform that shows Hertz-level linewidth, paving the way toward fully integrating low-noise silicon nitride photonics in volume using real devices for lasing.

Widely tunable and narrow-linewidth lasers at visible wavelengths are necessary for applications such as quantum optics, optical clocks and atomic and molecular physics. At present, the lasers are benchtop systems, which precludes these technologies from being used outside research laboratories. Here we demonstrate a chip-scale visible laser platform that enables tunable and narrow-linewidth lasers from near-ultraviolet to near-infrared wavelengths. Using micrometre-scale silicon nitride resonators and commercial Fabry–Pérot laser diodes, we achieve coarse tuning up to 12.5 nm and mode-hop-free fine tuning up to 33.9 GHz with intrinsic linewidths down to a few kilohertz. In addition, we show fine-tuning speeds of up to 267 GHz µs−1, fibre-coupled powers of up to 10 mW and typical side-mode suppression ratios above 35 dB. These specifications of our chip-scale lasers have only been achieved previously using large state-of-the-art benchtop laser systems, making our lasers stand out as powerful tools for the next generation of visible-light technologies.A chip-scale laser platform based on silicon nitride ring resonators and commercial Fabry–Pérot laser diodes is developed for the wavelength range from 404 nm to 785 nm. The achieved coarse and fine tunings are up to 12.5 nm and 33.9 GHz, respectively, with kilohertz-scale linewidths and side-mode suppression ratios above 35 dB.

The development of integrated semiconductor lasers has miniaturized traditional bulky laser systems, enabling a wide range of photonic applications. A progression from pure III-V based lasers to III-V/external cavity structures has harnessed low-loss waveguides in different material systems, leading to significant improvements in laser coherence and stability. Despite these successes, however, key functions remain absent. In this work, we address a critical missing function by integrating the Pockels effect into a semiconductor laser. Using a hybrid integrated III-V/Lithium Niobate structure, we demonstrate several essential capabilities that have not existed in previous integrated lasers. These include a record-high frequency modulation speed of 2 exahertz/s (2.0 × 10 18 Hz/s) and fast switching at 50 MHz, both of which are made possible by integration of the electro-optic effect. Moreover, the device co-lases at infrared and visible frequencies via the second-harmonic frequency conversion process, the first such integrated multi-color laser. Combined with its narrow linewidth and wide tunability, this new type of integrated laser holds promise for many applications including LiDAR, microwave photonics, atomic physics, and AR/VR. On-Chip integration of laser systems led to impressive development in many field of application like LIDAR or AR/VR to cite a few. Here the authors harness Pockels effect in an integrated semiconductor platform achieving fast on-chip configurability of a narrow linewidth laser.