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High efficiency RF and microwave solid state power amplifiers
Do you want to know how to design high efficiency RF and microwave solid state power amplifiers? Read this book to learn the main concepts that are fundamental for optimum amplifier design. Practical design techniques are set out, stating the pros and cons for each method presented in this text. In addition to novel theoretical discussion and workable guidelines, you will find helpful running examples and case studies that demonstrate the key issues involved in power amplifier (PA) design flow. Highlights include: Clarification of topics which are often misunderstood and misused, such as bias classes and PA nomenclatures. The consideration of both hybrid and monolithic microwave integrated circuits (MMICs). Discussions of switch-mode and current-mode PA design approaches and an explanation of the differences. Coverage of the linearity issue in PA design at circuit level, with advice on low distortion power stages. Analysis of the hot topic of Doherty amplifier design, plus a description of advanced techniques based on multi-way and multi-stage architecture solutions. High Efficiency RF and Microwave Solid State Power Amplifiers is: an ideal tutorial for MSc and postgraduate students taking courses in microwave electronics and solid state circuit/device design; a useful reference text for practising electronic engineers and researchers in the field of PA design and microwave and RF engineering. With its unique unified vision of solid state amplifiers, you won’t find a more comprehensive publication on the topic.
eBook
70 GSa/s and 51 GHz bandwidth track-and-hold amplifier in InP DHBT process
A differential 70 GSa/s track-and-hold amplifier has been designed and fabricated in a 320 GHz-f[sub]T[/sub] InP double heterojunction bipolar transistor process. Measurements show a 51 GHz small-signal bandwidth with an S11 parameter lower than -15 dB up to 56 GHz. The transient operation is verified up to 70 GSa/s. 60 GSa/s spectral measurements give total harmonic distortion <-46 dB up to 7 GHz and <-37 dB over the whole measurement range. [PUBLICATION ABSTRACT]
Journal Article
High efficiency GaN current-mode class-D amplifier at 2.6 GHz using pure differential transmission line filters
In class-D operation, the impedances of the output network at each harmonic frequency at the intrinsic terminals of the transistors are of main importance. This paper demonstrates a new concept using pure differential transmission line filters for the matching of these impedances. Furthermore, de-embedding techniques are used to compensate the impedance transforming characteristics of the package parasitics. A current-mode class-D (CMCD) amplifier with a power-added efficiency (PAE) of 62% and a corresponding output power of 29.5 W at 2.6 GHz has been demonstrated. To the authors' knowledge, these are the highest reported values of the PAE as well as the output power at this frequency for a CMCD.
Journal Article
5.8dBm P sub( 1dB), high gain W-band low-noise amplifier using high breakdown voltage InP/InGaAs DHBT technology
A five-stage W-band low-noise amplifier (LNA) based on the authors' InP/InGaAs double heterojunction bipolar transistors (DHBTs) process is reported. The LNA achieves a peak gain of 33.1 dB and 7.8 dB noise figure at 81GHz. Its output-related 1 dB compression point (P sub( 1dB)) lies at 5.8 dBm. The high gain and linearity of the LNA is mainly attributed to the performance of the DHBTs exhibiting a high breakdown voltage (BVceo > 8.7V), a current gain cutoff frequency (f sub( T)) of 167GHz, and a maximum oscillation frequency (f sub( max)) of 265GHz.
Journal Article
Topological Quantum Fluctuations and Traveling Wave Amplifiers
It is now well established that photonic systems can exhibit topological energy bands. Similar to their electronic counterparts, this leads to the formation of chiral edge modes which can be used to transmit light in a manner that is protected against backscattering. While it is understood how classical signals can propagate under these conditions, it is an outstanding important question how the quantum vacuum fluctuations of the electromagnetic field get modified in the presence of a topological band structure. We address this challenge by exploring a setting where a nonzero topological invariant guarantees the presence of a parametrically unstable chiral edge mode in a system with boundaries, even though there are no bulk-mode instabilities. We show that one can exploit this to realize a topologically protected, quantum-limited traveling wave parametric amplifier. The device is naturally protected against both internal losses and backscattering; the latter feature is in stark contrast to standard traveling wave amplifiers. This adds a new example to the list of potential quantum devices that profit from topological transport.
Journal Article