Asset Details
Do you wish to reserve the book?
5.8dBm P sub( 1dB), high gain W-band low-noise amplifier using high breakdown voltage InP/InGaAs DHBT technology
Hey, we have placed the reservation for you!
By the way, why not check out events that you can attend while you pick your title.
Oops! Something went wrong.
Looks like we were not able to place the reservation. Kindly try again later.
Are you sure you want to remove the book from the shelf?
5.8dBm P sub( 1dB), high gain W-band low-noise amplifier using high breakdown voltage InP/InGaAs DHBT technology
Do you wish to request the book?
5.8dBm P sub( 1dB), high gain W-band low-noise amplifier using high breakdown voltage InP/InGaAs DHBT technology
Please be aware that the book you have requested cannot be checked out. If you would like to checkout this book, you can reserve another copy
We have requested the book for you!
Your request is successful and it will be processed during the Library working hours. Please check the status of your request in My Requests.
Oops! Something went wrong.
Looks like we were not able to place your request. Kindly try again later.
Journal Article
5.8dBm P sub( 1dB), high gain W-band low-noise amplifier using high breakdown voltage InP/InGaAs DHBT technology
2012
Overview
A five-stage W-band low-noise amplifier (LNA) based on the authors' InP/InGaAs double heterojunction bipolar transistors (DHBTs) process is reported. The LNA achieves a peak gain of 33.1 dB and 7.8 dB noise figure at 81GHz. Its output-related 1 dB compression point (P sub( 1dB)) lies at 5.8 dBm. The high gain and linearity of the LNA is mainly attributed to the performance of the DHBTs exhibiting a high breakdown voltage (BVceo > 8.7V), a current gain cutoff frequency (f sub( T)) of 167GHz, and a maximum oscillation frequency (f sub( max)) of 265GHz.
Subject
