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A new type of LED constant current driving is proposed and designed in this paper, which controls the output current by receiving digital dimming signals. The output LED current can be accurately controlled with MOS transistors in the current mirror structure turned on and off. With a reference current of 10 uA, the dimmed output current range of the LED is 30 uA ∼ 270 uA. In a typical environment of 5 V and 27 °C, the phase margin and loop gain of the current reference generator amplifier are 62.5 deg and 114.75 dB, respectively, guaranteeing stable reference current and output LED current. At the same time, when the output current of the LED is a maximum of 270 uA, the channel has a fast-switching speed of 202.25 ns.

Amorphous oxide semiconductors have gained significant attention in the past few decades and have emerged as a promising material for thin-film transistors (TFTs) because they offer high carrier mobility (> 10–50 cm2/V s) and uniformity. In particular, amorphous indium-gallium-zinc-oxide (a-IGZO) has been widely employed as an active channel material in TFTs owing to its high mobility. However, indium-based TFTs suffer from stability problems under positive, negative, and illumination bias stress conditions, which limits their applications in flat-panel displays. Moreover, the limited supply of indium and growing demand for high-stability TFTs with better electrical performance has led to the introduction of tin oxide as a promising solution to replace indium in TFTs. This review provides an overview on the progress and recent developments in indium-free tin oxide-based TFTs for large-area electronics, with special emphasis on the sputtering technique. In addition, the source of the dual conductivity of tin oxide is addressed, which will be helpful in designing complementary metal oxide semiconductor devices. The instability problems and approaches to improve the electrical performance of tin oxide TFTs are also discussed.

After the synthesis of graphene, in the first year of this century, a wide research field on two-dimensional materials opens. 2D materials are characterized by an intrinsic high surface to volume ratio, due to their heights of few atoms, and, differently from graphene, which is a semimetal with zero or near zero bandgap, they usually have a semiconductive nature. These two characteristics make them promising candidate for a new generation of gas sensing devices. Graphene oxide, being an intermediate product of graphene fabrication, has been the first graphene-like material studied and used to detect target gases, followed by MoS2, in the first years of 2010s. Along with MoS2, which is now experiencing a new birth, after its use as a lubricant, other sulfides and selenides (like WS2, WSe2, MoSe2, etc.) have been used for the fabrication of nanoelectronic devices and for gas sensing applications. All these materials show a bandgap, tunable with the number of layers. On the other hand, 2D materials constituted by one atomic species have been synthetized, like phosphorene (one layer of black phosphorous), germanene (one atom thick layer of germanium) and silicone (one atom thick layer of silicon). In this paper, a comprehensive review of 2D materials-based gas sensor is reported, mainly focused on the recent developments of graphene oxide, exfoliated MoS2 and WS2 and phosphorene, for gas detection applications. We will report on their use as sensitive materials for conductometric, capacitive and optical gas sensors, the state of the art and future perspectives.

HighlightsA facile one‐step hydrothermal method for producing gram‐scale 1T@2H-MoS2 by imbedding the guest molecules and ions was developed.The influence of different MoS2 phase for electromagnetic absorbing properties was explored by analyzing electromagnetic parameters of 1T/2H MoS2 and 2H MoS2 with 50%, 40%, 30%, 20%, 15%, and 10% filler loading.Taking the advantage of 1T/2H MoS2, the flexible CF@1T/2H MoS2 was also synthesized to mind the request of flexible portable microwave absorption electronic devices.Phase engineering is an important strategy to modulate the electronic structure of molybdenum disulfide (MoS2). MoS2-based composites are usually used for the electromagnetic wave (EMW) absorber, but the effect of different phases on the EMW absorbing performance, such as 1T and 2H phase, is still not studied. In this work, micro-1T/2H MoS2 is achieved via a facile one-step hydrothermal route, in which the 1T phase is induced by the intercalation of guest molecules and ions. The EMW absorption mechanism of single MoS2 is revealed by presenting a comparative study between 1T/2H MoS2 and 2H MoS2. As a result, 1T/2H MoS2 with the matrix loading of 15% exhibits excellent microwave absorption property than 2H MoS2. Furthermore, taking the advantage of 1T/2H MoS2, a flexible EMW absorbers that ultrathin 1T/2H MoS2 grown on the carbon fiber also performs outstanding performance only with the matrix loading of 5%. This work offers necessary reference to improve microwave absorption performance by phase engineering and design a new type of flexible electromagnetic wave absorption material to apply for the portable microwave absorption electronic devices.

The International Roadmap for Devices and Systems (IRDS) forecasts that, for silicon-based metal–oxide–semiconductor (MOS) field-effect transistors (FETs), the scaling of the gate length will stop at 12 nm and the ultimate supply voltage will not decrease to less than 0.6 V (ref.  1 ). This defines the final integration density and power consumption at the end of the scaling process for silicon-based chips. In recent years, two-dimensional (2D) layered semiconductors with atom-scale thicknesses have been explored as potential channel materials to support further miniaturization and integrated electronics. However, so far, no 2D semiconductor-based FETs have exhibited performances that can surpass state-of-the-art silicon FETs. Here we report a FET with 2D indium selenide (InSe) with high thermal velocity as channel material that operates at 0.5 V and achieves record high transconductance of 6 mS μm −1 and a room-temperature ballistic ratio in the saturation region of 83%, surpassing those of any reported silicon FETs. An yttrium-doping-induced phase-transition method is developed for making ohmic contacts with InSe and the InSe FET is scaled down to 10 nm in channel length. Our InSe FETs can effectively suppress short-channel effects with a low subthreshold swing (SS) of 75 mV per decade and drain-induced barrier lowering (DIBL) of 22 mV V −1 . Furthermore, low contact resistance of 62 Ω μm is reliably extracted in 10-nm ballistic InSe FETs, leading to a smaller intrinsic delay and much lower energy-delay product (EDP) than the predicted silicon limit. A two-dimensional field-effect transistor made of indium selenide is shown to outperform state-of-the-art silicon-based transistors, operating at lower supply voltage and achieving record high transconductance and ballistic ratio.

Photodetectors based on transition metal dichalcogenides (TMDs) have been widely reported in the literature and molybdenum disulfide (MoS2) has been the most extensively explored for photodetection applications. The properties of MoS2, such as direct band gap transition in low dimensional structures, strong light–matter interaction and good carrier mobility, combined with the possibility of fabricating thin MoS2 films, have attracted interest for this material in the field of optoelectronics. In this work, MoS2-based photodetectors are reviewed in terms of their main performance metrics, namely responsivity, detectivity, response time and dark current. Although neat MoS2-based detectors already show remarkable characteristics in the visible spectral range, MoS2 can be advantageously coupled with other materials to further improve the detector performance Nanoparticles (NPs) and quantum dots (QDs) have been exploited in combination with MoS2 to boost the response of the devices in the near ultraviolet (NUV) and infrared (IR) spectral range. Moreover, heterostructures with different materials (e.g., other TMDs, Graphene) can speed up the response of the photodetectors through the creation of built-in electric fields and the faster transport of charge carriers. Finally, in order to enhance the stability of the devices, perovskites have been exploited both as passivation layers and as electron reservoirs.

This study introduces the principle of deadtime generation and gives a deadtime control circuit. The deadtime can be adjusted by the current generated by the MOS transistor in the subthreshold region to control the charging and discharging speed of the capacitor dynamically, and the whole circuit is simulated in the cadence simulation environment. The simulation results show that the designed circuit can manually adjust the dead time in the range of 70 ns-1, 650 ns depending on external settings, and greatly reduce the complexity of the circuit.

The world is currently facing critical water and energy issues due to the growing population and industrialization, calling for methods to obtain potable water, e.g., by photocatalysis, and to convert solar energy into fuels such as chemical or electrical energy, then storing this energy. Energy storage has been recently improved by using electrochemical capacitors and ion batteries. Research is actually focusing on the synthesis of materials and hybrids displaying improved electronic, physiochemical, electrical, and optical properties. Here, we review molybdenum disulfide (MoS2) materials and hybrids with focus on synthesis, electronic structure and properties, calculations of state, bandgap and charge density profiles, and applications in energy storage and water remediation.

The ability to create highly efficient and stable bifunctional electrocatalysts, capable of oxygen reduction reaction (ORR) and oxygen evolution reaction (OER) in the same electrolyte, represents an important endeavor toward high-performance zinc-air batteries (ZABs). Herein, we report a facile strategy for crafting wrinkled MoS₂/N-doped carbon core/shell nanospheres interfaced with single Fe atoms (denoted MoS₂@Fe-N-C) as superior ORR/OER bifunctional electrocatalysts for robust wearable ZABs with a high capacity and outstanding cycling stability. Specifically, the highly crumpled MoS₂ nanosphere core is wrapped with a layer of single-Fe-atom-impregnated, N-doped carbon shell (i.e., Fe-N-C shell with well-dispersed FeN4 sites). Intriguingly, MoS₂@Fe-N-C nanospheres manifest an ORR half-wave potential of 0.84 V and an OER overpotential of 360 mV at 10 mA·cm−2. More importantly, density functional theory calculations reveal the lowered energy barriers for both ORR and OER, accounting for marked enhanced catalytic performance of MoS₂@Fe-N-C nanospheres. Remarkably, wearable ZABs assembled by capitalizing on MoS₂@Fe-N-C nanospheres as an air electrode with an ultralow area loading (i.e., 0.25 mg·cm−2) display excellent stability against deformation, high special capacity (i.e., 442 mAh·g−1 Zn), excellent power density (i.e., 78 mW·cm−2) and attractive cycling stability (e.g., 50 cycles at current density of 5 mA·cm−2). This study provides a platform to rationally design single-atom-interfaced core/shell bifunctional electrocatalysts for efficient metal-air batteries.

Integrating memristor technology with traditional CMOS has led to innovative designs for ternary logic, significantly enhancing the performance and efficiency of digital integrated circuits. This hybrid approach takes advantage of the unique properties of memristors, including low power consumption, compact size, and non-volatility, to develop ternary logic circuits that outperform conventional binary systems in terms of area and energy efficiency. This article presents two new low-power ternary decoders designed using a hybrid memristor- MOS logic approach. The decoders were simulated and analyzed using SPICE, and their performance was compared with existing circuits. The results indicate that the power-efficient decoder uses 44.44% fewer transistors and dissipates 97.78% less power than previously documented circuits.