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In this paper, we have proposed a 2D analytical model for Asymmetric gate stack triple metal gate MOSFET(AGSTMGAAFET) and performed a comparative analysis with the simulation results obtained using the SILVACO 3D simulation software. Existing devices such as gate all around single metal (SMGAAFET), gate all around triple metal (TMGAAFET), gate stack single metal (GSSMGAAFET), gate stack triple metal (GSTMGAAFET) and asymmetric gate stack single metal (AGSTMGAAFET) have been compared with our proposed structure AGSTMGAAFET. Our device provides excellent performance in terms of drain current, transconductance, output conductance, current gain, maximum transducer power gain which shows our device’s suitability for various analog applications moreover the potential and electric field plots obtained have twostep profile and extremely low electric field near the drain region which ordains our device with the ability to suppress various SCE’s like DIBL and hot-carrier effect. The analytical model and simulation results show good convergence in values which validate the correctness of the proposed model.

Using commercially available SiC MOSFET dice, bidirectional MOSFETs were assembled and their electrical performance was tested. With proper gate biasing, the pair is capable of blocking at or near the rated value of the component MOSFETs in each direction. The pair conducts in both directions with an on-state resistance comparable to the sum of the constituent device resistances. With optimization of the component devices, this configuration promises to improve bidirectional switch performance beyond that of the simple assembled pair.

This paper presents for the first time an analytical model of a dielectric modulated surrounding-triple-gate MOSFET with a germanium source-based biosensor, which shows excellent improvement in sensitivity when compared to a silicon source. The mathematical analysis is based on the center-channel potential which is obtained by solving Poisson's equation in the cylindrical coordinate system using a parabolic approximation. The channel potential profile, threshold voltage, drain current, and subthreshold swing are obtained mathematically. Biosensing performance is investigated for different charged and neutral biomolecules by varying different device metrics including cavity thickness, channel thickness, cavity length, channel doping, and drain voltage. The analytical results are validated and verified with numerical simulations conducted with the ATLAS TCAD simulator and show outstanding agreement with the simulated results.

In this study, Si, SiC, and GaN based semiconductor switching elements to be used in the design of new generation high gain DC-DC converters are compared. Each switching element is tested at different frequencies and different pulse period ratios. The efficiency and output voltage of the high gain boost converter are analyzed in detail according to the switching element used. The amplifiers have been investigated at 50 kHz and 5 MHz switching frequencies. The results show that the converter using GaN-based MOSFET is more efficient than converters using other MOSFETs and reaches the highest efficiency at 200 kHz switching frequency. The proposed converter achieves 91.68% efficiency and 2.66 voltage gain at 0.3 pulse period rate, 94% efficiency and 3.78 voltage gain at 0.5 pulse period rate and 93.94% efficiency, and 6.33 voltage gain at 0.7 pulse period rate. Thus, it is understood that when GaN based MOSFETs are used in high gain DC-DC converters, higher gain and higher efficiency are achieved.

High-electron-mobility transistors based on gallium nitride technology are the most recently developed power electronics devices involved in power electronics applications. This article critically overviews the advantages and drawbacks of these enhanced, wide-bandgap devices compared with the silicon and silicon carbide MOSFETs used in power converters. High-voltage and low-voltage device applications are discussed to indicate the most suitable area of use for these innovative power switches and to provide perspective for the future. A general survey on the applications of gallium nitride technology in DC-DC and DC-AC converters is carried out, considering the improvements and the issues expected for the higher switching transient speed achievable.

In this work, the impact of gate material work function on the sensitivity of dual-material, double-gate, junctionless MOSFET ( D M D G - J L - M O S F E T )-based biosensor has been studied. To enhance the sensitivity of the biosensor, optimization of gate work functions has been done through Sentaurus TCAD simulator. With the immobilization of biomolecules in the cavity at different value of work function of gate metal 1 ( M 1) and gate metal 2 ( M 2), i.e., WF 1 and WF 2, enhancement in sensing metrics (change in threshold voltage S V th and I ON / I OFF ratio) is observed. The enhancement in sensitivity is profound in source-side gate (M1) work function (WF1) optimization as compared to drain-side gate (M2) work function (WF2) optimization. Sensitivity of 90 mV is observed in source-side gate work function optimization which is ∼ 89% more than the sensitivity of 23 mV which is achieved in drain-side gate work function optimization for a fixed concentration and dielectric constant of biomolecules. It has also been noted that the proposed structure exhibits ∼ 90 % higher sensitivity than the single-material, dual-gate, junctionless MOSFET ( S M D G - J L - M O S F E T ) biosensor. Results showcase that the optimization of gate metal work functions enhances the sensitivity of the biosensor.

In this work, a vertical gallium nitride (GaN)-based trench MOSFET on 4-inch free-standing GaN substrate is presented with threshold voltage of 3.15 V, specific on-resistance of 1.93 mΩ·cm2, breakdown voltage of 1306 V, and figure of merit of 0.88 GW/cm2. High-quality and stable MOS interface is obtained through two-step process, including simple acid cleaning and a following (NH4)2S passivation. Based on the calibration with experiment, the simulation results of physical model are consistent well with the experiment data in transfer, output, and breakdown characteristic curves, which demonstrate the validity of the simulation data obtained by Silvaco technology computer aided design (Silvaco TCAD). The mechanisms of on-state and breakdown are thoroughly studied using Silvaco TCAD physical model. The device parameters, including n−-GaN drift layer, p-GaN channel layer and gate dielectric layer, are systematically designed for optimization. This comprehensive analysis and optimization on the vertical GaN-based trench MOSFETs provide significant guide for vertical GaN-based high power applications.

The UIS characteristic of the device is a key parameter of the super-junction MOSFET, which represents the reliable performance of the device in the face of extreme conditions. The maximum avalanche energy ( E AS ) that the device can withstand under a single pulse of the gate electrode or the maximum avalanche energy ( E AR ) that the device can withstand under multiple pulses of the gate electrode is commonly used in the industry to characterize the UIS characteristic. To solve the avalanche energy problem of super-junction MOSFET, we propose a novel structure of super-junction MOSFET with a P-type diffused region on the top of the N-column drift region.

A new class of power MOSFET, the vertical tri-gate MOSFET, is described and analyzed. The structure can reduce the 4H-SiC MOS channel resistance by up to an order-of-magnitude, producing the same benefit as if the mobility were increased by the same factor. In this paper we outline the fabrication procedure and describe the unit processes unique to this structure.

Today, the silicon carbide (SiC) semiconductor is becoming the front runner in advanced power electronic devices. This material has been considered to be useful for abrasive powder, refractory bricks as well as ceramic varistors. Big changes have occurred owing to the author’s inspirational idea in 1968 to “make transistors from unusual material”. The current paper starts by describing the history of SiC research involving fundamental studies by the author’s group: unique epitaxial crystal growth techniques, the physical characterization of grown layers and processes for device fabrication. Trials for fabricating SiC power devices and their characteristics conducted until 2004 are precisely described. Recent progress in SiC crystal growth and peripheral techniques for SiC power devices are introduced. Finally, the present progress concerning SiC power devices is introduced together with the implementation of those devices in society.