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Fundamental research on semiconductor SiC and its applications to power electronics
by
MATSUNAMI, Hiroyuki
in
Ceramic powders
/ Chemical vapor deposition
/ Crystal growth
/ Electronic devices
/ Electronic equipment
/ Epitaxial growth
/ Gases
/ High temperature
/ Ion implantation
/ Light emitting diodes
/ metal-oxide-semiconductor field-effect transistor (MOSFET)
/ power device
/ Quality
/ R&D
/ Research & development
/ Review
/ Schottky diode (SBD)
/ Silicon carbide
/ silicon carbide (SiC)
/ Single crystals
/ social implementation
/ step-controlled epitaxy
/ Transistors
/ Varistors
2020
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Fundamental research on semiconductor SiC and its applications to power electronics
by
MATSUNAMI, Hiroyuki
in
Ceramic powders
/ Chemical vapor deposition
/ Crystal growth
/ Electronic devices
/ Electronic equipment
/ Epitaxial growth
/ Gases
/ High temperature
/ Ion implantation
/ Light emitting diodes
/ metal-oxide-semiconductor field-effect transistor (MOSFET)
/ power device
/ Quality
/ R&D
/ Research & development
/ Review
/ Schottky diode (SBD)
/ Silicon carbide
/ silicon carbide (SiC)
/ Single crystals
/ social implementation
/ step-controlled epitaxy
/ Transistors
/ Varistors
2020
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Do you wish to request the book?
Fundamental research on semiconductor SiC and its applications to power electronics
by
MATSUNAMI, Hiroyuki
in
Ceramic powders
/ Chemical vapor deposition
/ Crystal growth
/ Electronic devices
/ Electronic equipment
/ Epitaxial growth
/ Gases
/ High temperature
/ Ion implantation
/ Light emitting diodes
/ metal-oxide-semiconductor field-effect transistor (MOSFET)
/ power device
/ Quality
/ R&D
/ Research & development
/ Review
/ Schottky diode (SBD)
/ Silicon carbide
/ silicon carbide (SiC)
/ Single crystals
/ social implementation
/ step-controlled epitaxy
/ Transistors
/ Varistors
2020
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Fundamental research on semiconductor SiC and its applications to power electronics
Journal Article
Fundamental research on semiconductor SiC and its applications to power electronics
2020
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Overview
Today, the silicon carbide (SiC) semiconductor is becoming the front runner in advanced power electronic devices. This material has been considered to be useful for abrasive powder, refractory bricks as well as ceramic varistors. Big changes have occurred owing to the author’s inspirational idea in 1968 to “make transistors from unusual material”. The current paper starts by describing the history of SiC research involving fundamental studies by the author’s group: unique epitaxial crystal growth techniques, the physical characterization of grown layers and processes for device fabrication. Trials for fabricating SiC power devices and their characteristics conducted until 2004 are precisely described. Recent progress in SiC crystal growth and peripheral techniques for SiC power devices are introduced. Finally, the present progress concerning SiC power devices is introduced together with the implementation of those devices in society.
Publisher
The Japan Academy
Subject
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