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A wide range of materials can now be synthesized into semiconducting quantum dots. Because these materials grow from solutions, there is scope to combine quantum dots into devices by using simple, low-cost manufacturing processes. Kagan et al. review recent progress in tailoring and combining quantum dots to build electronic and optoelectronic devices. Because it is possible to tune the size, shape, and connectivity of each of the quantum dots, there is potential for fabricating electronic materials with properties that are not available in traditional bulk semiconductors. Science , this issue p. 885 The continued growth of mobile and interactive computing requires devices manufactured with low-cost processes, compatible with large-area and flexible form factors, and with additional functionality. We review recent advances in the design of electronic and optoelectronic devices that use colloidal semiconductor quantum dots (QDs). The properties of materials assembled of QDs may be tailored not only by the atomic composition but also by the size, shape, and surface functionalization of the individual QDs and by the communication among these QDs. The chemical and physical properties of QD surfaces and the interfaces in QD devices are of particular importance, and these enable the solution-based fabrication of low-cost, large-area, flexible, and functional devices. We discuss challenges that must be addressed in the move to solution-processed functional optoelectronic nanomaterials.

For 50 years the exponential rise in the power of electronics has been fuelled by an increase in the density of silicon complementary metal–oxide–semiconductor (CMOS) transistors and improvements to their logic performance. But silicon transistor scaling is now reaching its limits, threatening to end the microelectronics revolution. Attention is turning to a family of materials that is well placed to address this problem: group III–V compound semiconductors. The outstanding electron transport properties of these materials might be central to the development of the first nanometre-scale logic transistors.

Virtual models boost smart manufacturing by simulating decisions and optimization, from design to operations, explain Fei Tao and Qinglin Qi. Virtual models boost smart manufacturing by simulating decisions and optimization, from design to operations, explain Fei Tao and Qinglin Qi. An illustration of a digital twin city

By adapting the concept of epitaxy to two-dimensional space, we show the growth of a single-atomic-layer, in-plane heterostructure of a prototypical material system—graphene and hexagonal boron nitride (h-BN). Monolayer crystalline h-BN grew from fresh edges of monolayer graphene with atomic lattice coherence, forming an abrupt one-dimensional interface, or boundary. More important, the h-BN lattice orientation is solely determined by the graphene, forgoing configurations favored by the supporting copper substrate.

This Perspective discusses the spin-dependent properties emerging at the interfaces of molecular and inorganic materials, and describes possible future developments for spin-based technologies. The miniaturization trend in the semiconductor industry has led to the understanding that interfacial properties are crucial for device behaviour. Spintronics has not been alien to this trend, and phenomena such as preferential spin tunnelling, the spin-to-charge conversion due to the Rashba–Edelstein effect and the spin–momentum locking at the surface of topological insulators have arisen mainly from emergent interfacial properties, rather than the bulk of the constituent materials. In this Perspective we explore inorganic/molecular interfaces by looking closely at both sides of the interface. We describe recent developments and discuss the interface as an ideal platform for creating new spin effects. Finally, we outline possible technologies that can be generated thanks to the unique active tunability of molecular spinterfaces.

Incredibly thin transistors could deliver even more powerful computers if three research challenges can be solved, argue Ming-Yang Li and colleagues. Incredibly thin transistors could deliver even more powerful computers if three research challenges can be solved, argue Ming-Yang Li and colleagues. A working electronic device made by stacking atom-thick layers of 2D materials

Transition metal dichalcogenides are attracting widespread attention for their appealing optoelectronic properties. Using a combination of numerical and experimental techniques, the exciton binding energy is now determined for MoSe 2 on graphene. Two-dimensional (2D) transition metal dichalcogenides (TMDs) are emerging as a new platform for exploring 2D semiconductor physics 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 . Reduced screening in two dimensions results in markedly enhanced electron–electron interactions, which have been predicted to generate giant bandgap renormalization and excitonic effects 10 , 11 , 12 , 13 . Here we present a rigorous experimental observation of extraordinarily large exciton binding energy in a 2D semiconducting TMD. We determine the single-particle electronic bandgap of single-layer MoSe 2 by means of scanning tunnelling spectroscopy (STS), as well as the two-particle exciton transition energy using photoluminescence (PL) spectroscopy. These yield an exciton binding energy of 0.55 eV for monolayer MoSe 2 on graphene—orders of magnitude larger than what is seen in conventional 3D semiconductors and significantly higher than what we see for MoSe 2 monolayers in more highly screening environments. This finding is corroborated by our ab initio GW and Bethe–Salpeter equation calculations 14 , 15 which include electron correlation effects. The renormalized bandgap and large exciton binding observed here will have a profound impact on electronic and optoelectronic device technologies based on single-layer semiconducting TMDs.

A nociceptor is a critical and special receptor of a sensory neuron that is able to detect noxious stimulus and provide a rapid warning to the central nervous system to start the motor response in the human body and humanoid robotics. It differs from other common sensory receptors with its key features and functions, including the “no adaptation” and “sensitization” phenomena. In this study, we propose and experimentally demonstrate an artificial nociceptor based on a diffusive memristor with critical dynamics for the first time. Using this artificial nociceptor, we further built an artificial sensory alarm system to experimentally demonstrate the feasibility and simplicity of integrating such novel artificial nociceptor devices in artificial intelligence systems, such as humanoid robots. The development of humanoid robots with artificial intelligence calls for smart solutions for tactile sensing systems that respond to dynamic changes in the environment. Here, Yoon et al. emulate non-adaption and sensitization function of a nociceptor—a sensory neuron—using diffusive oxide-based memristors.

Layer-by-layer stacking or lateral interfacing of atomic monolayers has opened up unprecedented opportunities to engineer two-dimensional heteromaterials. Fabrication of such artificial heterostructures with atomically clean and sharp interfaces, however, is challenging. Here, we report a one-step growth strategy for the creation of high-quality vertically stacked as well as in-plane interconnected heterostructures of WS 2 /MoS 2 via control of the growth temperature. Vertically stacked bilayers with WS 2 epitaxially grown on top of the MoS 2 monolayer are formed with preferred stacking order at high temperature. A strong interlayer excitonic transition is observed due to the type II band alignment and to the clean interface of these bilayers. Vapour growth at low temperature, on the other hand, leads to lateral epitaxy of WS 2 on MoS 2 edges, creating seamless and atomically sharp in-plane heterostructures that generate strong localized photoluminescence enhancement and intrinsic p–n junctions. The fabrication of heterostructures from monolayers, using simple and scalable growth, paves the way for the creation of unprecedented two-dimensional materials with exciting properties. Vapour growth of WS 2 /MoS 2 two-dimensional materials at low and high temperature allows the synthesis of in-plane lateral heterojunctions and vertically stacked bilayers, respectively, with atomically sharp interfaces.

HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices owing to its excellent electrical properties and compatibility with complementary metal oxide semiconductor technology based on mature fabrication processes such as atomic layer deposition. Oxygen vacancy (Vo), which is the most frequently observed intrinsic defect in HfO2-based films, determines the physical/electrical properties and device performance. Vo influences the polymorphism and the resulting ferroelectric properties of HfO2. Moreover, the switching speed and endurance of ferroelectric memories are strongly correlated to the Vo concentration and redistribution. They also strongly influence the device-to-device and cycle-to-cycle variability of integrated circuits based on ferroelectric memories. The concentration, migration, and agglomeration of Vo form the main mechanism behind the RS behavior observed in HfO2, suggesting that the device performance and reliability in terms of the operating voltage, switching speed, on/off ratio, analog conductance modulation, endurance, and retention are sensitive to Vo. Therefore, the mechanism of Vo formation and its effects on the chemical, physical, and electrical properties in ferroelectric and RS HfO2 should be understood. This study comprehensively reviews the literature on Vo in HfO2 from the formation and influencing mechanism to material properties and device performance. This review contributes to the synergetic advances of current knowledge and technology in emerging HfO2-based semiconductor devices.