Asset Details
Do you wish to reserve the book?
Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
Hey, we have placed the reservation for you!
By the way, why not check out events that you can attend while you pick your title.
Oops! Something went wrong.
Looks like we were not able to place the reservation. Kindly try again later.
Are you sure you want to remove the book from the shelf?
Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
Do you wish to request the book?
Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
Please be aware that the book you have requested cannot be checked out. If you would like to checkout this book, you can reserve another copy
We have requested the book for you!
Your request is successful and it will be processed during the Library working hours. Please check the status of your request in My Requests.
Oops! Something went wrong.
Looks like we were not able to place your request. Kindly try again later.
Journal Article
Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
2014
Overview
Transition metal dichalcogenides are attracting widespread attention for their appealing optoelectronic properties. Using a combination of numerical and experimental techniques, the exciton binding energy is now determined for MoSe
2
on graphene.
Two-dimensional (2D) transition metal dichalcogenides (TMDs) are emerging as a new platform for exploring 2D semiconductor physics
1
,
2
,
3
,
4
,
5
,
6
,
7
,
8
,
9
. Reduced screening in two dimensions results in markedly enhanced electron–electron interactions, which have been predicted to generate giant bandgap renormalization and excitonic effects
10
,
11
,
12
,
13
. Here we present a rigorous experimental observation of extraordinarily large exciton binding energy in a 2D semiconducting TMD. We determine the single-particle electronic bandgap of single-layer MoSe
2
by means of scanning tunnelling spectroscopy (STS), as well as the two-particle exciton transition energy using photoluminescence (PL) spectroscopy. These yield an exciton binding energy of 0.55 eV for monolayer MoSe
2
on graphene—orders of magnitude larger than what is seen in conventional 3D semiconductors and significantly higher than what we see for MoSe
2
monolayers in more highly screening environments. This finding is corroborated by our
ab initio
GW and Bethe–Salpeter equation calculations
14
,
15
which include electron correlation effects. The renormalized bandgap and large exciton binding observed here will have a profound impact on electronic and optoelectronic device technologies based on single-layer semiconducting TMDs.
Publisher
Nature Publishing Group UK,Nature Publishing Group
Subject
