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"Silicon carbide"
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Fundamental research on semiconductor SiC and its applications to power electronics
Today, the silicon carbide (SiC) semiconductor is becoming the front runner in advanced power electronic devices. This material has been considered to be useful for abrasive powder, refractory bricks as well as ceramic varistors. Big changes have occurred owing to the author’s inspirational idea in 1968 to “make transistors from unusual material”. The current paper starts by describing the history of SiC research involving fundamental studies by the author’s group: unique epitaxial crystal growth techniques, the physical characterization of grown layers and processes for device fabrication. Trials for fabricating SiC power devices and their characteristics conducted until 2004 are precisely described. Recent progress in SiC crystal growth and peripheral techniques for SiC power devices are introduced. Finally, the present progress concerning SiC power devices is introduced together with the implementation of those devices in society.
Journal Article
Progress and challenges towards additive manufacturing of SiC ceramic
Silicon carbide (SiC) ceramic and related materials are widely used in various military and engineering fields. The emergence of additive manufacturing (AM) technologies provides a new approach for the fabrication of SiC ceramic products. This article systematically reviews the additive manufacturing technologies of SiC ceramic developed in recent years, including Indirect Additive Manufacturing (Indirect AM) and Direct Additive Manufacturing (Direct AM) technologies. This review also summarizes the key scientific and technological challenges for the additive manufacturing of SiC ceramic, and also forecasts its possible future opportunities. This paper aims to provide a helpful guidance for the additive manufacturing of SiC ceramic and other structural ceramics.
Journal Article
Single‐Crystal and Polycrystal SiC Bonding for Cost‐effective Chip Fabrication
High‐quantity single‐crystal silicon carbide (SiC) is widely used in power electronics due to its excellent breakdown electric field strength and high thermal conductivity. However, back grinding during the chip fabrication generally results in ≈70% of single‐crystal SiC being wasted, leading to the high cost of SiC chips. In order to improve the utilization, single‐crystal SiC on polycrystal SiC (SoP‐SiC) is bonded. The challenge to achieve excellent bonding interfaces for such a system is the heterogeneous surface of polycrystals in which those grains with different orientations usually have different physical and chemical properties, making it difficult to achieve sufficiently smooth surfaces for bonding. Here, ion beam etching (IBE) is employed to activate the surface of polycrystal and single‐crystal SiC and achieve high bonding strength (up to ≈20 MPa) after annealing in the atmosphere. Sub‐nanometer‐scale electron microscopy and energy spectroscopy analysis showing the IBE method can effectively inhibit the formation of silicon oxide at the bonding interface, which is expected to reduce the interface thermal resistance according to the phonon spectrum analysis. This study provides a novel method to fabricate single‐polycrystal SiC junctions with high bonding strength and high thermal conductivity, which is valuable for the SiC industry. To tackle the high cost of single‐crystal silicon carbide (SiC) chips caused by ≈70% material waste during back grinding, a novel bonding method is proposed. By employing ion beam etching (IBE) to activate single‐crystal and polycrystal SiC surfaces, direct bonding (≈20 MPa) after annealing in the atmosphere is achieved while suppressing silicon oxide formation to lower interface thermal resistance.
Journal Article
Review of Silicon Carbide Processing for Power MOSFET
Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, higher thermal conductivity, higher operating frequency, higher operating temperature, and higher saturation drift velocity, SiC has attracted much attention from researchers and the industry for decades. With the advances in material science and processing technology, many power applications such as new smart energy vehicles, power converters, inverters, and power supplies are being realized using SiC power devices. In particular, SiC MOSFETs are generally chosen to be used as a power device due to their ability to achieve lower on-resistance, reduced switching losses, and high switching speeds than the silicon counterpart and have been commercialized extensively in recent years. A general review of the critical processing steps for manufacturing SiC MOSFETs, types of SiC MOSFETs, and power applications based on SiC power devices are covered in this paper. Additionally, the reliability issues of SiC power MOSFET are also briefly summarized.
Journal Article
Damage evolution mechanism and low-damage grinding technology of silicon carbide ceramics
Silicon carbide (SiC) ceramics are extensively utilized in aerospace, national defense, and petrochemical industries due to their superior physical and chemical properties. The processing of bulk SiC ceramics necessitates precise and efficient grinding techniques to produce components with satisfactory functionality. However, the inherent high hardness and brittleness of SiC ceramics present significant challenges during grinding, leading to severe brittle fracture and tool wear that compromise both surface integrity and production efficiency. Although ductile-regime grinding of SiC ceramics can be achieved by enhancing machine tool accuracy and stiffness while optimizing wheel performance alongside appropriate selection of process parameters, a comprehensive summary of the mechanisms underlying damage evolution during grinding is lacking, and a mature grinding process for SiC ceramics has yet to be developed. To bridge this gap, the sintering technologies, mechanical properties, and microstructures of SiC ceramics were briefly covered. The grinding-induced damage mechanism and low-damage grinding technologies of SiC ceramics were summarized. The fundamental science underlying the ductile deformation and removal mechanisms of brittle solids was emphasized. Additionally, attention was directed towards the critical role of hybrid energy field grinding in minimizing brittle damages and promoting removal efficiency. This review not only elucidates the intrinsic interactions between the work material and abrasives, but also offers valuable insights for optimizing the grinding processes of brittle solids. Damage evolution mechanism induced by grinding of SiC ceramics is summarized. Low-damage grinding technologies of SiC ceramics are discussed. Future directions for low-damage grinding of SiC ceramics are proposed. Sintering technologies, mechanical properties, and microstructures of SiC ceramics are covered.
Journal Article
Long-term ceramic matrix composite for aeroengine
Three strategies were proposed to prolong the service life of continuous fiber-reinforced silicon carbide ceramic matrix composite (CMC-SiC), which served as thermal-structure components of aeroengine at thermo-mechanical-oxygenic coupling environment. As for some thermal-structure components with low working stress, improving the degree of densification was crucial to prolong the service life, and the related process approaches were recited. If the thermal-structure components worked under moderate stress, the matrix cracking stress (
σ
mc
) should be improved as far as possible. The fiber preform architecture, interface shear strength, residual thermal stress, and matrix strengthening were associated with
σ
mc
in this review. Introducing self-healing components was quite significant with the appearance of matrix microcracks when CMC-SiC worked at more severe environment for hundreds of hours. The damage can be sealed by glass phase originating from the reaction between self-healing components and oxygen. The effective self-healing temperature range of different self-healing components was first summarized and distinguished. The structure, composition, and preparation process of CMC-SiC should be systematically designed and optimized to achieve long duration target.
Journal Article
A Review of SiC Sensor Applications in High-Temperature and Radiation Extreme Environments
Sensors operating in extreme environments are currently a focal point of global research. Extreme environmental conditions, such as overload, vibration, corrosion, high pressure, high temperature, and radiation, can affect the performance of sensors to the point of failure. It is noteworthy that, compared to the resistance to overload and vibration achieved through structural design, the application of sensors under high-temperature and radiation extreme conditions poses a greater challenge. Silicon carbide (SiC) material, due to its excellent physical and chemical properties, such as a large band gap and high atomic critical displacement energy, demonstrates outstanding potential for application in high-temperature and radiation extreme environments. This review presents the current status and research progress of SiC sensors in high-temperature and radiation extreme environments. Finally, given the limited research on the radiation resistance of SiC sensors, it identifies several challenges and research deficiencies in the application of SiC sensors under radiation extreme environments and discusses the future development direction of SiC-based substrate sensors.
Journal Article
Synthesis of Ti3AuC2, Ti3Au2C2 and Ti3IrC2 by noble metal substitution reaction in Ti3SiC2 for high-temperature-stable Ohmic contacts to SiC
The large class of layered ceramics encompasses both van der Waals (vdW) and non-vdW solids. While intercalation of noble metals in vdW solids is known, formation of compounds by incorporation of noble-metal layers in non-vdW layered solids is largely unexplored. Here, we show formation of Ti
3
AuC
2
and Ti
3
Au
2
C
2
phases with up to 31% lattice swelling by a substitutional solid-state reaction of Au into Ti
3
SiC
2
single-crystal thin films with simultaneous out-diffusion of Si. Ti
3
IrC
2
is subsequently produced by a substitution reaction of Ir for Au in Ti
3
Au
2
C
2
. These phases form Ohmic electrical contacts to SiC and remain stable after 1,000 h of ageing at 600 °C in air. The present results, by combined analytical electron microscopy and
ab initio
calculations, open avenues for processing of noble-metal-containing layered ceramics that have not been synthesized from elemental sources, along with tunable properties such as stable electrical contacts for high-temperature power electronics or gas sensors.
Substitution of Si with Au and Ir in Ti
3
SiC
2
through a solid-state diffusion process allows the synthesis of Ti
3
AuC
2
, Ti
3
Au
2
C
2
and Ti
3
IrC
2
phases able to form Ohmic contacts with SiC stable at high temperatures under ambient air conditions.
Journal Article
Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers
4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local planarization are cornerstones. Chemical–mechanical polishing (CMP) is the key processing technology in the planarization of 4H‐SiC wafers. Enhancing the performance of CMP is critical to improving the surface quality and reducing the processing cost of 4H‐SiC wafers. In this review, the superior properties of 4H‐SiC and the processing of 4H‐SiC wafers are introduced. The development of CMP with chemical, mechanical, and chemical–mechanical synergistic approaches to improve the performance of CMP is systematically reviewed. The basic principle and processing system of each improvement approach are presented. By comparing the material removal rate of CMP and the surface roughness of CMP‐treated 4H‐SiC wafers, the prospect on the chemical, mechanical, and chemical–mechanical synergistic improvement approaches is finally provided. Recent progress on the CMP of 4H‐SiC wafers are discussed after a brief overview of the basic properties of 4H‐SiC. Chemical, mechanical, and chemical–mechanical synergistic approaches for the efficiency improvement of CMP are highlighted. By discussing the advantages and disadvantages of the efficiency‐improvement approaches, the challenges of using these approaches in industry are analyzed. Finally, prospects on the development of the CMP of 4H‐SiC wafers are presented.
Journal Article