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The Two-Photon Absorption–Transient Current Technique (TPA-TCT) is a device characterisation technique that enables three-dimensional spatial resolution. Laser light in the quadratic absorption regime is employed to generate excess charge carriers only in a small volume around the focal spot. The drift of the excess charge carriers is studied to obtain information about the device under test. Neutron-, proton-, and gamma-irradiated p-type pad silicon detectors up to equivalent fluences of about 7 × 1015 neq/cm2 and a dose of 186 Mrad are investigated to study irradiation-induced effects on the TPA-TCT. Neutron and proton irradiation lead to additional linear absorption, which does not occur in gamma-irradiated detectors. The additional absorption is related to cluster damage, and the absorption scales according to the non-ionising energy loss. The influence of irradiation on the two-photon absorption coefficient is investigated, as well as potential laser beam depletion by the irradiation-induced linear absorption. Further, the electric field in neutron- and proton-irradiated pad detectors at an equivalent fluence of about 7 × 1015 neq/cm2 is investigated, where the space charge of the proton-irradiated devices appears inverted compared to the neutron-irradiated device.

Device simulation plays a crucial role in complementing experimental device characterisation by enabling deeper understanding of internal physical processes. However, for simulations to be trusted, experimental validation is essential to confirm the accuracy of the conclusions drawn. In the framework of semiconductor detector characterisation, one powerful tool for such validation is the Two Photon Absorption-Transient Current Technique (TPA-TCT), which allows for highly precise, three-dimensional spatially-resolved characterisation of semiconductor detectors. In this work, the TCAD framework Synopsys Sentaurus is used to simulate depth-resolved TPA-TCT data for both p-type pad detectors (PINs) and Low Gain Avalanche Detectors (LGADs). The simulated data are compared against experimentally measured TPA-TCT results. Through this comparison, it is demonstrated that TCAD simulations can reproduce the TPA-TCT measurements, providing valuable insights into the TPA-TCT itself. Another significant outcome of this study is the successful simulation of the gain reduction mechanism, which can be observed in LGADs with increasing densities of excess charge carriers. This effect is demonstrated in an p-type LGAD with a thickness of approximately 286 µm. The results confirm the ability of TCAD to model the complex interaction between carrier dynamics and device gain.

The two photon absorption-transient current technique (TPA-TCT) was used to investigate a silicon strip detector with illumination from the top. Measurement and analysis techniques for the TPA-TCT of segmented devices are presented and discussed using a passive strip CMOS detector and a standard strip detector as an example. The influence of laser beam clipping and reflection is shown, and a method that allows to compensate these intensity-related effects for investigation of the electric field is introduced and successfully employed. Additionally, the mirror technique is introduced, which exploits reflection at a metallised back side to enable the measurement directly below a top metallisation while illuminating from the top.

The potential of maximum entropy (PME) is an indicator of extreme disorder at the electrode/electrolyte interface and can predict changes in catalytic activity within electrolytes of varying compositions. The laser‐induced current transient technique is employed to evaluate the PME for Au polycrystalline (Aupc) electrodes immersed in Ar‐saturated cation electrolyte mixtures containing potassium and sodium ions at pH = 8. Five cation ratios (0.5 M K2SO4:0.5 M Na2SO4 = 0:1, 0.25:0.75, 0.5:0.5, 0.75:0.25, and 1:0) are explored, considering earlier studies that unveil cation‐dependent shifts at near‐neutral pH. Moreover, for all electrolyte compositions, electrochemical impedance spectroscopy is utilized to determine the double‐layer capacitance (CDL), the minimum of which should be close to the potential of zero charge (PZC). By correlating cation molar ratios with the PMEs and PZCs, the impact on the model oxygen reduction reaction (ORR) activity, assessed via the rotating disk electrode method, is analyzed. The results demonstrate a linear relationship between electrolyte cation mixtures and PME, while ORR activity exhibits an exponential trend. This observation validates the PME–activity link hypothesis, underscoring electrolyte components’ pivotal role in tailoring interfacial properties for electrocatalytic systems. These findings introduce a new degree of freedom for designing optimal electrocatalytic systems by adjusting various electrolyte components. Employing various techniques allows for determining and correlating the potential of maximum entropy (PME), the potential of zero charge, and oxygen reduction reaction (ORR) activity. The impact of electrolyte components (K+ and Na+ electrolyte mixtures) on Aupc is systematically probed. The results demonstrate a linear relationship between electrolyte cation mixtures and PME, while ORR activity exhibits an exponential trend.

This work presents an asymmetric p-i-p silicon diode structure (a-p-i-p) characterized using the Transient Current Technique (TCT) with a scanning pulsed laser system. The device, fabricated on n-type silicon (3–5 Ω·cm) with two identical p+-doped meandering line electrodes (one of which is obscured by a black resin layer), was tested in photovoltaic mode (zero bias) under laser excitation at 660 nm, 980 nm, and 1064 nm wavelengths. The transient photocurrent response was recorded as the laser spot was scanned across the device surface with 0.01 mm spatial resolution. A pronounced wavelength-dependent response was observed: the shortest wavelength (660 nm) produced the largest transient current signals, while longer wavelengths (980 nm, 1064 nm) yielded progressively weaker responses. This study introduces a fundamentally new design paradigm that enables the p-i-p diode to operate in photovoltaic mode.

The problem that the conventional double-exponential transient current model (DE model) can overdrive the circuit, which leads to the overestimation of the soft error rate of the logic cell, is solved. Our work uses a new and accurate model for predicting the soft error rate that brings the soft error rate closer to the actual. The piecewise double-exponential transient current model (PDE model) is chosen, and the accuracy of the model is reflected using the Layout Awareness Single Event Multi Transients Soft Error Rate Calculation tool (LA-SEMT-SER tool). The model can characterize transient current pulses piecewise and limit the peak current magnitude to not exceed the conduction current. TCAD models are constructed from 28 nm process library and cell layouts. The transfer characteristic curves of devices are calibrated, and functional timing verification is performed to ensure the accuracy of the TCAD model. The experimental results show that the PDE model is not only more consistent with TCAD simulation than the DE model in modeling the single event transient currents of the device, but also that the SER calculated by the LA-SEMT-SER tool based on the PDE model has a smaller error than the SER calculated by the LA-SEMT-SER tool based on the DE model.

Three-dimensional trench electrode silicon detectors play an important role in particle physics research, nuclear radiation detection, and other fields. A novel polysilicon-fill-strengthened etch-through 3D trench electrode detector is proposed to address the shortcomings of traditional 3D trench electrode silicon detectors; for example, the distribution of non-uniform electric fields, asymmetric electric potential, and dead zone. The physical properties of the detector have been extensively and systematically studied. This study simulated the electric field, potential, electron concentration distribution, complete depletion voltage, leakage current, capacitance, transient current induced by incident particles, and weighting field distribution of the detector. It also systematically studied and analyzed the electrical characteristics of the detector. Compared to traditional 3D trench electrode silicon detectors, this new detector adopts a manufacturing process of double-side etching technology and double-side filling technology, which results in a more sensitive detector volume and higher electric field uniformity. In addition, the size of the detector unit is 120 µm × 120 µm × 340 µm; the structure has a small fully depleted voltage, reaching a fully depleted state at around 1.4 V, with a saturation leakage current of approximately 4.8×10−10A, and a geometric capacitance of about 99 fF.

In order to enhance the transient stability of offshore wind turbines (OWTs) in marine energy systems, the grid codes stipulate that OWTs should possess the low-voltage ride-through (LVRT) ability of being grid-tied and injecting reactive current during grid fault. However, the grid-side converter (GSC) of OWTs may lose stability under weak grid or severe fault conditions due to inaccurate current references. To address this issue, a novel transient current control method is proposed to improve the transient stability of permanent-magnet-synchronous-generator (PMSG)-based OWTs. The feature of DC-link overvoltage is investigated and is alleviated by utilizing the GSC’s overcurrent capacity and chopper. Additionally, the equivalent circuit of the PMSG-based OWT connected to the onshore grid is derived based on Thevenin’s theorem. The feasible current region (FCR) is then determined, taking into account the GSC capacity, pre-fault power ability, LVRT requirement, and synchronization stability. Furthermore, a grid-impedance-based transient current control method is designed to enhance the fault ride-through performance and mitigate power oscillation of the OWT under various transient grid impedance and fault conditions. Finally, a simulation model is conducted using PSCAD v4.6.3 software to validate the effectiveness of the proposed method.

Nowadays, the concept of multiple inverter-interfaced distributed generations (IIDGs)-based MG is recognized as a renowned notion. Encountering unexpected transient situations, the fast inflexible response of IIDG may contribute in serious concerns over its successful operation. Contemplating the transient stability paradigm, first swing stability of the investigated system is the mostly pinpointed matter. In the state-of-the-art indices in transient analysis of IIDG-based technologies, the current index is referred as the frequently deployed one. However, this index is capped within the switches’ twice rated current to afford the inverter’s physical constraints. To tackle this requirement, the ongoing study aims at devising an efficient transient current control loop (TCCL) embedded as a part of main control procedure. In this practice, the well-known simple proportional–integral (PI) controller, as the most persuasive industrial choice, is regarded as the supplementary TCCL key unit. The main functionality of the founded TCCL is deemed as a talented transient current limiter in IIDGs during the versatile possible short-circuit situations. In spite of this, the conventional fixed tuning of gains in PI controller would depreciate its safe and reliable operation encountering different contingencies. To rehabilitate this matter, fuzzy logic and artificial neural network concepts are deployed for realizing an adaptive PI controller capable of handling both the connected and autonomous modes of operation. Precise numerical studies are carried out to interrogate the performance of the proposed approach. Results are analyzed in depth.

One of the most important parameters determining the efficiency of X-ray sensors is the μ∙τ product, where μ is the charge-carrier mobility and τ is the carrier lifetime. This paper presents results of measurements of the charge-carrier mobility in high-resistivity (HR) GaAs:Cr sensors using two methods: the laser-induced transient-current technique (LTCT) and the Hall measurements. It has been found that the concentration of holes in the HR GaAs:Cr material exceeds that of electrons, whereas the value of the electron drift mobility is in the range 4000–4300 cm 2 /(V·s).