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Moore's law : the life of Gordon Moore, Silicon Valley's quiet revolutionary
\"A chemist and founder of Intel, Gordon Moore played a major role in revolutionizing technology and shaping the growth and reach of Silicon Valley. The story of the man--an inventor and businessman whose influence on the world is at least as great as Thomas Edison's, Henry Ford's, or Bill Gates's--has never before been told ... [In this book], Arnold Thackray sheds light on Gordon Moore, gives context to the technologies and world of high-tech power he helped to develop, and provides [an] ... introduction to the history and science of the silicon transistor, the technological building block that has transformed commercial business, defense strategies, and the everyday lives of individuals around the globe\"-- Provided by publisher.
Book
Impact of Charge-Trapping Effects on Reliability Instability in Alsub.xGasub.1−xN/GaN High-Electron-Mobility Transistors with Various Al Compositions
In this study, we present a detailed analysis of trapping characteristics at the Al[sub.x]Ga[sub.1−x]N/GaN interface of Al[sub.x]Ga[sub.1−x]N/GaN high-electron-mobility transistors (HEMTs) with reliability assessments, demonstrating how the composition of the Al in the Al[sub.x]Ga[sub.1−x]N barrier impacts the performance of the device. Reliability instability assessment in two different Al[sub.x]Ga[sub.1−x]N/GaN HEMTs [x = 0.25, 0.45] using a single-pulse ID–VD characterization technique revealed higher drain-current degradation (∆ID) with pulse time for Al[sub.0.45]Ga[sub.0.55]N/GaN devices which correlates to the fast-transient charge-trapping in the defect sites near the interface of Al[sub.x]Ga[sub.1−x]N/GaN. Constant voltage stress (CVS) measurement was used to analyze the charge-trapping phenomena of the channel carriers for long-term reliability testing. Al[sub.0.45]Ga[sub.0.55]N/GaN devices exhibited higher-threshold voltage shifting (∆VT) caused by stress electric fields, verifying the interfacial deterioration phenomenon. Defect sites near the interface of the AlGaN barrier responded to the stress electric fields and captured channel electrons—resulting in these charging effects that could be partially reversed using recovery voltages. The quantitative extraction of volume trap density (Nt) using 1/f low-frequency noise characterizations unveiled a 40% reduced Nt for the Al[sub.0.25]Ga[sub.0.75]N/GaN device, further verifying the higher trapping phenomena in the Al[sub.0.45]Ga[sub.0.55]N barrier caused by the rougher Al[sub.0.45]Ga[sub.0.55]N/GaN interface.
Journal Article
Nonlinear Design Fets & Hemts
This exciting new resource describes a unified approach to non-linear analysis and design involving compound semiconductor field effect transistors FETs and heterojunction field effect transistors HFETs. It provides an understanding of the characterization and analysis devices made by non-linear design, highlighting the relationship between design and performance. The rarely acknowledged errors inherent in extracting capacitive and conductance elements, as required by all circuit models, from measurements made at the terminals of a device is given, and how these limitations and restrictions often yield workable results is
eBook
Ohmic Contact Formation to β-Gasub.2Osub.3 Nanosheet Transistors with Ar-Containing Plasma Treatment
Effective Ohmic contact between metals and their conductive channels is a crucial step in developing high-performance Ga[sub.2]O[sub.3]-based transistors. Distinct from bulk materials, excess thermal energy of the annealing process can destroy the low-dimensional material itself. Given the thermal budget concern, a feasible and moderate solution (i.e., Ar-containing plasma treatment) is proposed to achieve effective Ohmic junctions with (100) β-Ga[sub.2]O[sub.3] nanosheets. The impact of four kinds of plasma treatments (i.e., gas mixtures SF[sub.6]/Ar, SF[sub.6]/O[sub.2]/Ar, SF[sub.6]/O[sub.2], and Ar) on (100) β-Ga[sub.2]O[sub.3] crystals is comparatively studied by X-ray photoemission spectroscopy for the first time. With the optimal plasma pre-treatment (i.e., Ar plasma, 100 W, 60 s), the resulting β-Ga[sub.2]O[sub.3] nanosheet field-effect transistors (FETs) show effective Ohmic contact (i.e., contact resistance R [sub.C] of 104 Ω·mm) without any post-annealing, which leads to competitive device performance such as a high current on/off ratio (>10[sup.7]), a low subthreshold swing (SS, 249 mV/dec), and acceptable field-effect mobility (μ[sub.eff], ~21.73 cm[sup.2] V[sup.−1] s[sup.−1]). By using heavily doped β-Ga[sub.2]O[sub.3] crystals (N [sub.e], ~10[sup.20] cm[sup.−3]) for Ar plasma treatments, the contact resistance R [sub.C] can be further decreased to 5.2 Ω·mm. This work opens up new opportunities to enhance the Ohmic contact performance of low-dimensional Ga[sub.2]O[sub.3]-based transistors and can further benefit other oxide-based nanodevices.
Journal Article
MOSFET modeling for circuit analysis and design
This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.
eBook
Modern microprocessor built from complementary carbon nanotube transistors
Electronics is approaching a major paradigm shift because silicon transistor scaling no longer yields historical energy-efficiency benefits, spurring research towards beyond-silicon nanotechnologies. In particular, carbon nanotube field-effect transistor (CNFET)-based digital circuits promise substantial energy-efficiency benefits, but the inability to perfectly control intrinsic nanoscale defects and variability in carbon nanotubes has precluded the realization of very-large-scale integrated systems. Here we overcome these challenges to demonstrate a beyond-silicon microprocessor built entirely from CNFETs. This 16-bit microprocessor is based on the RISC-V instruction set, runs standard 32-bit instructions on 16-bit data and addresses, comprises more than 14,000 complementary metal–oxide–semiconductor CNFETs and is designed and fabricated using industry-standard design flows and processes. We propose a manufacturing methodology for carbon nanotubes, a set of combined processing and design techniques for overcoming nanoscale imperfections at macroscopic scales across full wafer substrates. This work experimentally validates a promising path towards practical beyond-silicon electronic systems.
A 16-bit microprocessor built from over 14,000 carbon nanotube transistors may enable energy efficiency advances in electronics technologies beyond silicon.
Journal Article
Aptamer–field-effect transistors overcome Debye length limitations for small-molecule sensing
Molecular binding to receptors on the surface of field-effect transistors (FETs) can be sensed through changes in transconductance. However, the saline solutions typically used with biomolecules create an electrical double layer that masks any events that occur within about 1 nanometer from the surface. Nakatsuka
et al.
overcame this limitation by using binding to large, negatively charged DNA stem loop structures that, upon ligand binding, cause conformational changes that can be sensed with an FET, even in solutions with high ionic strength. The authors demonstrate the sensing of charged molecules such as dopamine in artificial cerebrospinal fluid as well as neutral molecules such as glucose and zwitterion molecules like sphingosine-1-phosphate.
Science
, this issue p.
319
Large conformational changes induced in charged DNA stem-loop receptors can be sensed in high–ionic strength solutions.
Detection of analytes by means of field-effect transistors bearing ligand-specific receptors is fundamentally limited by the shielding created by the electrical double layer (the “Debye length” limitation). We detected small molecules under physiological high–ionic strength conditions by modifying printed ultrathin metal-oxide field-effect transistor arrays with deoxyribonucleotide aptamers selected to bind their targets adaptively. Target-induced conformational changes of negatively charged aptamer phosphodiester backbones in close proximity to semiconductor channels gated conductance in physiological buffers, resulting in highly sensitive detection. Sensing of charged and electroneutral targets (serotonin, dopamine, glucose, and sphingosine-1-phosphate) was enabled by specifically isolated aptameric stem-loop receptors.
Journal Article
Ultra-low HIV-1 p24 detection limits with a bioelectronic sensor
Early diagnosis of the infection caused by human immunodeficiency virus type-1 (HIV-1) is vital to achieve efficient therapeutic treatment and limit the disease spreading when the viremia is at its highest level. To this end, a point-of-care HIV-1 detection carried out with label-free, low-cost, and ultra-sensitive screening technologies would be of great relevance. Herein, a label-free single molecule detection of HIV-1 p24 capsid protein with a large (wide-field) single-molecule transistor (SiMoT) sensor is proposed. The system is based on an electrolyte-gated field-effect transistor whose gate is bio-functionalized with the antibody against the HIV-1 p24 capsid protein. The device exhibits a limit of detection of a single protein and a limit of quantification in the 10 molecule range. This study paves the way for a low-cost technology that can quantify, with single-molecule precision, the transition of a biological organism from being “healthy” to being “diseased” by tracking a target biomarker. This can open to the possibility of performing the earliest possible diagnosis.
Journal Article
Organic Electronics II
Like its predecessor this book is devoted to the materials, manufacturing and applications aspects of organic thin-film transistors.Once again authored by the most renowned experts from this fascinating and fast-moving area of research, it offers a joint perspective both broad and in-depth on the latest developments in the areas of materials.
eBook
Graphene-based field-effect transistors for biosensing: where is the field heading to?
Two-dimensional (2D) materials hold great promise for future applications, notably their use as biosensing channels in the field-effect transistor (FET) configuration. On the road to implementing one of the most widely used 2D materials, graphene, in FETs for biosensing, key issues such as operation conditions, sensitivity, selectivity, reportability, and economic viability have to be considered and addressed correctly. As the detection of bioreceptor-analyte binding events using a graphene-based FET (gFET) biosensor transducer is due to either graphene doping and/or electrostatic gating effects with resulting modulation of the electrical transistor characteristics, the gFET configuration as well as the surface ligands to be used have an important influence on the sensor performance. While the use of back-gating still grabs attention among the sensor community, top-gated and liquid-gated versions have started to dominate this area. The latest efforts on gFET designs for the sensing of nucleic acids, proteins and virus particles in different biofluids are presented herewith, highlighting the strategies presently engaged around gFET design and choosing the right bioreceptor for relevant biomarkers.
Journal Article