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Ohmic Contact Formation to β-Gasub.2Osub.3 Nanosheet Transistors with Ar-Containing Plasma Treatment
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Ohmic Contact Formation to β-Gasub.2Osub.3 Nanosheet Transistors with Ar-Containing Plasma Treatment
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Journal Article
Ohmic Contact Formation to β-Gasub.2Osub.3 Nanosheet Transistors with Ar-Containing Plasma Treatment
2024
Overview
Effective Ohmic contact between metals and their conductive channels is a crucial step in developing high-performance Ga[sub.2]O[sub.3]-based transistors. Distinct from bulk materials, excess thermal energy of the annealing process can destroy the low-dimensional material itself. Given the thermal budget concern, a feasible and moderate solution (i.e., Ar-containing plasma treatment) is proposed to achieve effective Ohmic junctions with (100) β-Ga[sub.2]O[sub.3] nanosheets. The impact of four kinds of plasma treatments (i.e., gas mixtures SF[sub.6]/Ar, SF[sub.6]/O[sub.2]/Ar, SF[sub.6]/O[sub.2], and Ar) on (100) β-Ga[sub.2]O[sub.3] crystals is comparatively studied by X-ray photoemission spectroscopy for the first time. With the optimal plasma pre-treatment (i.e., Ar plasma, 100 W, 60 s), the resulting β-Ga[sub.2]O[sub.3] nanosheet field-effect transistors (FETs) show effective Ohmic contact (i.e., contact resistance R [sub.C] of 104 Ω·mm) without any post-annealing, which leads to competitive device performance such as a high current on/off ratio (>10[sup.7]), a low subthreshold swing (SS, 249 mV/dec), and acceptable field-effect mobility (μ[sub.eff], ~21.73 cm[sup.2] V[sup.−1] s[sup.−1]). By using heavily doped β-Ga[sub.2]O[sub.3] crystals (N [sub.e], ~10[sup.20] cm[sup.−3]) for Ar plasma treatments, the contact resistance R [sub.C] can be further decreased to 5.2 Ω·mm. This work opens up new opportunities to enhance the Ohmic contact performance of low-dimensional Ga[sub.2]O[sub.3]-based transistors and can further benefit other oxide-based nanodevices.
Publisher
MDPI AG
Subject
