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First-principles calculations were performed to investigate the effect of Pd concentration and oxygen vacancies on the stability of Pd at LaFeO 3 surfaces. We found a much stronger tendency of Pd to segregate by taking the aggregation of Pd at LaFe 1- x Pd x O 3- y surfaces into consideration, resulting in a pair of Pd-Pd around a vacancy. Moreover, we predicted that one oxygen-vacancy-containing FeO 2 -terminated surfaces would be stable at high temperatures by comparing the stability of LaFe 1- x Pd x O 3- y surfaces, which further supports our previous conclusion that a Pd-containing perovskite catalyst should be calcined at 1,073 K or higher temperatures in air to enhance the segregation of Pd in the vicinity of surfaces to rapidly transform the Pd catalyst from oxidized to reduced states on the perovskite support.

We propose the metal-assisted chemical etching of Ge surfaces in water mediated by dissolved oxygen molecules (O 2 ). First, we demonstrate that Ge surfaces around deposited metallic particles (Ag and Pt) are preferentially etched in water. When a Ge(100) surface is used, most etch pits are in the shape of inverted pyramids. The mechanism of this anisotropic etching is proposed to be the enhanced formation of soluble oxide (GeO 2 ) around metals by the catalytic activity of metallic particles, reducing dissolved O 2 in water to H 2 O molecules. Secondly, we apply this metal-assisted chemical etching to the nanoscale patterning of Ge in water using a cantilever probe in an atomic force microscopy setup. We investigate the dependences of probe material, dissolved oxygen concentration, and pressing force in water on the etched depth of Ge(100) surfaces. We find that the enhanced etching of Ge surfaces occurs only when both a metal-coated probe and saturated-dissolved-oxygen water are used. In this study, we present the possibility of a novel lithography method for Ge in which neither chemical solutions nor resist resins are needed.

The recent tremendous advances in medical technology at the level of academic research have set high expectations for the clinical outcomes they promise to deliver. To the demise of patient hopes, however, the more disruptive and invasive a new technology is, the bigger the gap is separating the conceptualization of a medical device and its adoption into healthcare systems. When technology breakthroughs are reported in the biomedical scientific literature, news focus typically lies on medical implications rather than engineering progress, as the former are of higher appeal to a general readership. While successful therapy and diagnostics are indeed the ultimate goals, it is of equal importance to expose the engineering thinking needed to achieve such results and, critically, identify the challenges that still lie ahead. Here, we would like to provoke thoughts on the following questions, with particular focus on microfabricated medical devices: should research advancing the maturity and reliability of medical technology benefit from higher accessibility and visibility? How can the scientific community encourage and reward academic work on the overshadowed engineering aspects that will facilitate the evolution of laboratory samples into clinical devices?

SiO x N y films with a low nitrogen concentration (< 4%) have been prepared on Si substrates at 400°C by atmospheric-pressure plasma oxidation-nitridation process using O 2 and N 2 as gaseous precursors diluted in He. Interface properties of SiO x N y films have been investigated by analyzing high-frequency and quasistatic capacitance-voltage characteristics of metal-oxide-semiconductor capacitors. It is found that addition of N into the oxide increases both interface state density ( D it ) and positive fixed charge density ( Q f ). After forming gas anneal, D it decreases largely with decreasing N 2 /O 2 flow ratio from 1 to 0.01 while the change of Q f is insignificant. These results suggest that low N 2 /O 2 flow ratio is a key parameter to achieve a low D it and relatively high Q f , which is effective for field effect passivation of n-type Si surfaces.

Ultraprecise aspheric mirrors that offer nanofocusing and high coherence are indispensable for developing third-generation synchrotron radiation and X-ray free-electron laser sources. In industry, the extreme ultraviolet (wavelength: 13.5 nm) lithography used for high-accuracy aspheric mirrors is a promising technology for fabricating semiconductor devices. In addition, ultraprecise mirrors with a radius of curvature of less than 10 mm are needed in many digital video instruments. We developed a new type of nanoprofiler that traces the normal vector of a mirror's surface. The principle of our measuring method is that the normal vector at each point on the surface is determined by making the incident light beam on the mirror surface and the reflected beam at that point coincide, using two sets of two pairs of goniometers and one linear stage. From the acquired normal vectors and their coordinates, the three-dimensional shape is calculated by a reconstruction algorithm. The characteristics of the measuring method are as follows: the profiler uses the straightness of laser light without using a reference surface. Surfaces of any shape can be measured, and there is no limit on the aperture size. We calibrated this nanoprofiler by considering the system error resulting from the assembly error and encoder scale error, and evaluated the performance at the nanometer scale. We suppressed the effect of random errors by maintaining the temperature in a constant-temperature room within ±0.01°C. We measured a concave spherical mirror with a radius of curvature of 400 mm and a flat mirror and compared the results with those obtained using a Fizeau interferometer. The profiles of the mirrors were consistent within the range of system errors.

Ultraprecise optical elements are applied in advanced optical apparatus. Elastic emission machining (EEM) is one of the ultraprecision machining methods used to fabricate shapes with 0.1-nm accuracy. In this study, we proposed and experimentally tested the control of the shape of a stationary spot profile by introducing a focusing-flow state between the nozzle outlet and the workpiece surface in EEM. The simulation results indicate that the focusing-flow nozzle sharpens the distribution of the velocity on the workpiece surface. The results of machining experiments verified those of the simulation. The obtained stationary spot conditions will be useful for surface processing with a high spatial resolution.

We have investigated the initial stage of hydrolysis process of Ga-terminated GaN surfaces by using first-principles theoretical calculations. We found that the activation barrier of H 2 O dissociation at the kinked site of the Ga-terminated GaN surface is about 0.8 eV, which is significantly lower than that at the stepped site of about 1.2 eV. This is consistent with the experimental observation where a step-terrace structure is observed after the etching process of Ga-terminated GaN surfaces with catalyst-referred etching method. Detailed analysis on the nature of the chemical interaction uring the hydrolysis processes will be discussed.

We investigate the effects of coupling between a molecular exciton, which consists of an electron and a hole in a molecule, and a surface plasmon (exciton-plasmon coupling) on the electron transitions of the molecule using nonequilibrium Green’s function method. Due to the exciton-plasmon coupling, excitation channels of the molecule arise in the energy range lower than the electronic excitation energy of the molecule. It is found that the electron transitions via these excitation channels give rise to the molecular luminescence and the vibrational excitations at the bias voltage lower than the electronic excitation energy of the molecule. Our results also indicate that the vibrational excitations assist the emission of photons, whose energy exceeds the product of the elementary charge and the bias voltage, (upconverted luminescence).

Free-standing aligned carbon nanotubes have previously been grown above 700°C on mesoporous silica embedded with iron nanoparticles. Here, carbon nanotubes aligned over areas up to several square centimeters were grown on nickel-coated glass below 666°C by plasma-enhanced hot filament chemical vapor deposition. Acetylene gas was used as the carbon source and ammonia gas was used as a catalyst and dilution gas. Nanotubes with controllable diameters from 20 to 400 nanometers and lengths from 0.1 to 50 micrometers were obtained. Using this method, large panels of aligned carbon nanotubes can be made under conditions that are suitable for device fabrication.