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Polymers are promising materials for fabricating photonic integrated waveguide devices. Versatile functional devices can be manufactured using a simple process, with low cost and potential mass-manufacturing. This paper reviews the recent progress of polymer photonic integrated devices fabricated using the UV imprinting technique. The passive polymer waveguide devices for wavelength filtering, power splitting, and light collecting, and the active polymer waveguide devices based on the thermal-optic tuning effect, are introduced. Then, the electro-optic (EO) modulators, by virtue of the high EO coefficient of polymers, are described. Finally, the photonic biosensors, which are based on low-cost and biocompatible polymer platforms, are presented.

Silicon photonics is an enabling technology that provides integrated photonic devices and systems with low-cost mass manufacturing capability. It has attracted increasing attention in both academia and industry in recent years, not only for its applications in communications, but also in sensing. One important issue of silicon photonics that comes with its high integration density is an interface between its high-performance integrated waveguide devices and optical fibers or free-space optics. Surface grating coupler is a preferred candidate that provides flexibility for circuit design and reduces effort for both fabrication and alignment. In the past decades, considerable research efforts have been made on in-plane grating couplers to address their insufficiency in coupling efficiency, wavelength sensitivity and polarization sensitivity compared with out-of-plane edge-coupling. Apart from improved performances, new functionalities are also on the horizon for grating couplers. In this paper, we review the current research progresses made on grating couplers, starting from their fundamental theories and concepts. Then, we conclude various methods to improve their performance, including coupling efficiency, polarization and wavelength sensitivity. Finally, we discuss some emerging research topics on grating couplers, as well as practical issues such as testing, packaging and promising applications.

Integrated photonics on Silicon-On-Insulator (SOI) substrates is a well developed research field that has already significantly impacted various fields, such as quantum computing, micro sensing devices, biosensing, and high-rate communications. Although quite complex circuits can be made with such technology, everything is based on a few ’building blocks’ which are then combined to form more complex circuits. This review article provides a detailed examination of the state of the art of integrated photonic building blocks focusing on passive elements, covering fundamental principles and design methodologies. Key components discussed include waveguides, fiber-to-chip couplers, edges and gratings, phase shifters, splitters and switches (including y-branch, MMI, and directional couplers), as well as subwavelength grating structures and ring resonators. Additionally, this review addresses challenges and future prospects in advancing integrated photonic circuits on SOI platforms, focusing on scalability, power efficiency, and fabrication issues. The objective of this review is to equip researchers and engineers in the field with a comprehensive understanding of the current landscape and future trajectories of integrated photonic components on SOI substrates with a 220 nm thick device layer of intrinsic silicon.

One of the main problems when exciting or measuring substrate integrated waveguide (SIW) devices lies in the need of a good interconnection with planar structures. In this reported work, the negative effects produced by the connectors and the tapered microstrip‐to‐SIW transitions are de‐embedded from the measurements of the SIW structure by a thru‐reflect‐line calibration with an adequate and cheap SIW calibration kit.

Electronic and photonic technologies have transformed our lives—from computing and mobile devices, to information technology and the internet. Our future demands in these fields require innovation in each technology separately, but also depend on our ability to harness their complementary physics through integrated solutions 1 , 2 . This goal is hindered by the fact that most silicon nanotechnologies—which enable our processors, computer memory, communications chips and image sensors—rely on bulk silicon substrates, a cost-effective solution with an abundant supply chain, but with substantial limitations for the integration of photonic functions. Here we introduce photonics into bulk silicon complementary metal–oxide–semiconductor (CMOS) chips using a layer of polycrystalline silicon deposited on silicon oxide (glass) islands fabricated alongside transistors. We use this single deposited layer to realize optical waveguides and resonators, high-speed optical modulators and sensitive avalanche photodetectors. We integrated this photonic platform with a 65-nanometre-transistor bulk CMOS process technology inside a 300-millimetre-diameter-wafer microelectronics foundry. We then implemented integrated high-speed optical transceivers in this platform that operate at ten gigabits per second, composed of millions of transistors, and arrayed on a single optical bus for wavelength division multiplexing, to address the demand for high-bandwidth optical interconnects in data centres and high-performance computing 3 , 4 . By decoupling the formation of photonic devices from that of transistors, this integration approach can achieve many of the goals of multi-chip solutions 5 , but with the performance, complexity and scalability of ‘systems on a chip’ 1 , 6 – 8 . As transistors smaller than ten nanometres across become commercially available 9 , and as new nanotechnologies emerge 10 , 11 , this approach could provide a way to integrate photonics with state-of-the-art nanoelectronics. A way of integrating photonics with silicon nanoelectronics is described, using polycrystalline silicon on glass islands alongside transistors on bulk silicon complementary metal–oxide–semiconductor chips.

With the proliferation of ultrahigh-speed mobile networks and internet-connected devices, along with the rise of artificial intelligence (AI) 1 , the world is generating exponentially increasing amounts of data that need to be processed in a fast and efficient way. Highly parallelized, fast and scalable hardware is therefore becoming progressively more important 2 . Here we demonstrate a computationally specific integrated photonic hardware accelerator (tensor core) that is capable of operating at speeds of trillions of multiply-accumulate operations per second (10 12 MAC operations per second or tera-MACs per second). The tensor core can be considered as the optical analogue of an application-specific integrated circuit (ASIC). It achieves parallelized photonic in-memory computing using phase-change-material memory arrays and photonic chip-based optical frequency combs (soliton microcombs 3 ). The computation is reduced to measuring the optical transmission of reconfigurable and non-resonant passive components and can operate at a bandwidth exceeding 14 gigahertz, limited only by the speed of the modulators and photodetectors. Given recent advances in hybrid integration of soliton microcombs at microwave line rates 3 – 5 , ultralow-loss silicon nitride waveguides 6 , 7 , and high-speed on-chip detectors and modulators, our approach provides a path towards full complementary metal–oxide–semiconductor (CMOS) wafer-scale integration of the photonic tensor core. Although we focus on convolutional processing, more generally our results indicate the potential of integrated photonics for parallel, fast, and efficient computational hardware in data-heavy AI applications such as autonomous driving, live video processing, and next-generation cloud computing services. An integrated photonic processor, based on phase-change-material memory arrays and chip-based optical frequency combs, which can operate at speeds of trillions of multiply-accumulate (MAC) operations per second, is demonstrated.

Lithium niobate (LiNbO ) on insulator (LNOI) is a promising material platform for integrated photonics due to single crystal LiNbO film’s wide transparent window, high refractive index, and high second-order nonlinearity. Based on LNOI, the fast-developing ridge-waveguide fabrication techniques enabled various structures, devices, systems, and applications. We review the basic structures including waveguides, cavities, periodically poled LiNbO , and couplers, along with their fabrication methods and optical properties. Treating those basic structures as building blocks, we review several integrated devices including electro-optic modulators, nonlinear optical devices, and optical frequency combs with each device’s operating mechanism, design principle and methodology, and performance metrics. Starting from these integrated devices, we review how integrated LNOI devices boost the performance of LiNbO ’s traditional applications in optical communications and data center, integrated microwave photonics, and quantum optics. Beyond those traditional applications, we also review integrated LNOI devices’ novel applications in metrology including ranging system and frequency comb spectroscopy. Finally, we envision integrated LNOI photonics’ potential in revolutionizing nonlinear and quantum optics, optical computing and signal processing, and devices in ultraviolet, visible, and mid-infrared regimes. Beyond this outlook, we discuss the challenges in integrated LNOI photonics and the potential solutions.

With the development of novel optoelectronic materials and nanofabrication technologies, integrated photonics is a rapidly developing field that will promote the development and application of next‐generation photonic devices. In recent years, emerging two‐dimensional materials (2DMs) including graphene, transition metal dichalcogenides (TMDCs), black phosphorus (BP), and ternary compounds show many complementarities and unique characteristics over those of traditional optoelectronic materials including broadband absorption, ultrafast carrier mobility, strong nonlinear effects, and compatibility for monolithic integration. Herein, the recent progress on waveguide‐integrated active devices for a full photonic circuit based on 2DMs is reviewed. Both the development of nanofabrication techniques and the working mechanism of active photonic components based on 2DMs containing integrated light sources, waveguide‐integrated modulators, photodetectors, as well as some advanced 2DMs‐based optoelectronic devices are illustrated in detail. In the end, the existing challenges and perspectives on novel 2DMs‐integrated photonics are summarized and discussed. Two‐dimensional materials (2DMs) have recently emerged as an important class of photonic materials offering exceptional optical performance, which attracts increasing attention for a wide range of applications in integrated photonics. Herein, active optoelectronic devices based on 2DMs that could be the advanced components for future photonic circuits are reviewed.

In integrated photonics, specific wavelengths such as 1,550 nm are preferred due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, two-dimensional materials bear scientifically and technologically relevant properties such as electrostatic tunability and strong light–matter interactions. However, no efficient photodetector in the telecommunication C-band has been realized with two-dimensional transition metal dichalcogenide materials due to their large optical bandgaps. Here we demonstrate a MoTe2-based photodetector featuring a strong photoresponse (responsivity 0.5 A W–1) operating at 1,550 nm in silicon photonics enabled by strain engineering the two-dimensional material. Non-planarized waveguide structures show a bandgap modulation of 0.2 eV, resulting in a large photoresponse in an otherwise photoinactive medium when unstrained. Unlike graphene-based photodetectors that rely on a gapless band structure, this photodetector shows an approximately 100-fold reduction in dark current, enabling an efficient noise-equivalent power of 90 pW Hz–0.5. Such a strain-engineered integrated photodetector provides new opportunities for integrated optoelectronic systems.A strain-induced absorption-enhanced MoTe2-based silicon photonic microring-integrated photodetector is demonstrated, featuring high responsivity of ~0.5 A W–1 at 1,550 nm, with a low noise-equivalent power of 90 pW Hz–0.5.

On a scalable silicon technology platform, we demonstrate photodetectors matching or even surpassing state-of-the-art III–V devices. As key components in high-speed optoelectronics, photodetectors with bandwidths greater than 100 GHz have been a topic of intense research for several decades. Solely InP-based detectors could satisfy the highest performance specifications. Devices based on other materials, such as germanium-on-silicon devices, used to lag behind in speed, but enabled complex photonic integrated circuits and co-integration with silicon electronics. Here we demonstrate waveguide-coupled germanium photodiodes with optoelectrical 3-dB bandwidths of 265 GHz and 240 GHz at a photocurrent of 1 mA. This outstanding performance is achieved by a novel device concept in which a germanium fin is sandwiched between complementary in situ-doped silicon layers. Our photodetectors show internal responsivities of 0.3 A W−1 (265 GHz) and 0.45 A W−1 (240 GHz) at a wavelength of 1,550 nm. The internal bandwidth–efficiency product of the latter device is 86 GHz. Low dark currents of 100–200 nA are obtained from these ultra-fast photodetectors.By sandwiching a germanium fin between complementary in situ-doped silicon layers, a waveguide-coupled germanium photodiode with a 3-dB bandwidth of 265 GHz, accompanied by high responsivity and low dark current, is realized.