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The paper addresses a novel approach concerning the appearance of negative series resistance (R s ) at high frequencies for both temperatures and voltages. Most of the previous studies have focused on the relationship between voltage and current (I - V) to determine the value of R s using several methods. By measuring capacitance and conductance as a function of voltage, we were able to develop a systematic analysis of series resistance. At high frequencies of 2 × 10 7 , 10 7 Hz, R s has negative values however, at frequency 10 6 Hz it takes both positive and negative values, whilst from (10 5 − 10) Hz it has positive values. Here in this article, we synthesized Au/PPY-MWCNTs/TiO 2 /Al 2 O 3 /n-Si/Al structure which can be used in a variety of applications such as supercapacitors, and diodes. We investigated the electrical properties such as ideality factor (n), barrier height (ф b ), series resistance using several approaches such as conventional, Chueng, and Nord methods. The structure has shown rectification with a good response to daylight illumination. The structure response to daylight illumination indicates that photodiodes have the potential to be used as solar detectors.

The paper presents a new approach based on the appearance of negative capacitance (NC) at high and low frequencies; previously, researchers agreed that NC only occurred at high or low frequencies. For the first time, we synthesized Au/polypyrrole/MWCNT composite/TiO ₂ /Al2O ₃ /n-Si/Al structure for use in electronic and supercapacitor applications. The structural, electrical, and dielectric properties were investigated by x-ray diffraction, FTIR, Raman spectroscopy, I-V, and C-V measurements. The results revealed that for all working voltages and temperatures, negative capacitance and conductance occurred at high frequencies between 2 × 10 ⁷ and 10 ⁷ Hz. Similarly, the phenomena of negative capacitance occurred at low frequencies (100, 10) Hz. The capacitance-voltage experiments were used to perform the analysis of the variation of capacitance and conductance with frequency, voltage, and temperature. The polypyrrole, MWCNT composite /TiO ₂ /Al ₂ O ₃ /n-Si structure exhibits diode behavior and has a high rectification ratio. I-V measurements were used to investigate ideality factors, barrier height, series and shunt resistance#, and rectification ratio.

The current work presents a new structure based on Au/PVA/SiO2/p-Si/Al that has not been studied before. An aqueous solution of polyvinyl alcohol (PVA) polymer gel was deposited on the surface of SiO2/Si using the spin-coating technique. The silicon wafer was left to be oxidized in a furnace at 1170 k for thirty minutes, creating an interdiffusion layer of SiO2. The variations in the dielectric constant (Є′), dielectric loss (Є″), and dielectric tangent (tanδ) with the change in the frequency, voltage, and temperature were analyzed. The results showed an increase in the dielectric constant (Є′) and a decrease in the dielectric loss (Є″) and tangent (tanδ); thus, the Au/PVA/SiO2/p-Si/Al heterostructure has opened up new frontiers for the semiconductor industry, especially for capacitor manufacturing. The Cole–Cole diagrams of the Є″ and Є′ have been investigated at different temperatures and voltages. The ideality factor (n), barrier height (Φb), series resistance (Rs), shunt resistance (Rsh), and rectification ratio (RR) were also measured at different temperatures.

The paper presents structural and dielectric properties of Polypyrrole-MWCNTs/TiO 2 /Al 2 O 3 /n-Si emphasizing that one of the superior characteristics is the appearance of negative dielectric constant and dielectric loss tangent at both high and low frequencies. It may worth mentioning that the need to develop electronic devices based on new materials combination has motivated the development of such structures as supercapacitors and diodes. The structural characterization of PPy-MWCNTs/TiO 2 /Al 2 O 3 /n-Si was investigated using X-ray diffraction, FTIR, Raman spectroscopy, and scanning electron microscope. The oxide film thickness (d ox ), the density of state (N SS ), admittance (Y m ), electric field (E m ), depletion layer width (W d ), and ΔΦb (eV) were examined using the C −2 − V relationship. At low frequencies, the values of W d , Φ b increase, however as frequency rises, the W d , N ss , and R s decrease. The dielectric constant (ɛ`) takes only negative values at a high frequency of 2x10 7 Hz, whereas it takes both negative and positive values at frequencies of 10 7 , 100, and 10 Hz. The dielectric loss tangent (tanδ) has positive and negative values at frequencies 10 7 , 10 6 , 100, and 10 Hz.

Electro-optic modulators translate high-speed electronic signals into the optical domain and are critical components in modern telecommunication networks 1 , 2 and microwave-photonic systems 3 , 4 . They are also expected to be building blocks for emerging applications such as quantum photonics 5 , 6 and non-reciprocal optics 7 , 8 . All of these applications require chip-scale electro-optic modulators that operate at voltages compatible with complementary metal–oxide–semiconductor (CMOS) technology, have ultra-high electro-optic bandwidths and feature very low optical losses. Integrated modulator platforms based on materials such as silicon, indium phosphide or polymers have not yet been able to meet these requirements simultaneously because of the intrinsic limitations of the materials used. On the other hand, lithium niobate electro-optic modulators, the workhorse of the optoelectronic industry for decades 9 , have been challenging to integrate on-chip because of difficulties in microstructuring lithium niobate. The current generation of lithium niobate modulators are bulky, expensive, limited in bandwidth and require high drive voltages, and thus are unable to reach the full potential of the material. Here we overcome these limitations and demonstrate monolithically integrated lithium niobate electro-optic modulators that feature a CMOS-compatible drive voltage, support data rates up to 210 gigabits per second and show an on-chip optical loss of less than 0.5 decibels. We achieve this by engineering the microwave and photonic circuits to achieve high electro-optical efficiencies, ultra-low optical losses and group-velocity matching simultaneously. Our scalable modulator devices could provide cost-effective, low-power and ultra-high-speed solutions for next-generation optical communication networks and microwave photonic systems. Furthermore, our approach could lead to large-scale ultra-low-loss photonic circuits that are reconfigurable on a picosecond timescale, enabling a wide range of quantum and classical applications 5 , 10 , 11 including feed-forward photonic quantum computation. Chip-scale lithium niobate electro-optic modulators that rapidly convert electrical to optical signals and use CMOS-compatible voltages could prove useful in optical communication networks, microwave photonic systems and photonic computation.

The field-effect electron mobility of aqueous solution-processed indium gallium oxide (IGO) thin-film transistors (TFTs) is significantly enhanced by polyvinyl alcohol (PVA) addition to the precursor solution, a >70-fold increase to 7.9 cm²/Vs. To understand the origin of this remarkable phenomenon, microstructure, electronic structure, and charge transport of IGO:PVA film are investigated by a battery of experimental and theoretical techniques, including In K-edge and Ga K-edge extended X-ray absorption fine structure (EXAFS); resonant soft X-ray scattering (R-SoXS); ultraviolet photoelectron spectroscopy (UPS); Fourier transform-infrared (FT-IR) spectroscopy; time-of-flight secondary-ion mass spectrometry (ToF-SIMS); composition-/processing-dependent TFT properties; high-resolution solid-state ¹H, 71Ga, and 115In NMR spectroscopy; and discrete Fourier transform (DFT) analysis with ab initio molecular dynamics (MD) liquid-quench simulations. The 71Ga{¹H} rotational-echo double-resonance (REDOR) NMR and other data indicate that PVA achieves optimal H doping with a Ga···H distance of ∼3.4 Å and conversion from six- to four-coordinate Ga, which together suppress deep trap defect localization. This reduces metal-oxide polyhedral distortion, thereby increasing the electron mobility. Hydroxyl polymer doping thus offers a pathway for efficient H doping in green solvent-processed metal oxide films and the promise of high-performance, ultra-stable metal oxide semiconductor electronics with simple binary compositions.

A method for annealing metal-oxide semiconductor films with deep-ultraviolet light yields thin-film transistors with performance comparable to that of thermally annealed devices, and widens the range of substrates on which such devices can be fabricated. Semiconductors in the spotlight Solution-processable metal-oxide semiconductors are attractive materials for low-cost, flexible electronics, but the need to anneal the deposited materials at relatively high temperatures limits the range of substrates on which such devices can be fabricated. Now Yong-Hoon Kim and colleagues demonstrate that irradiating the solution-cast films with deep ultraviolet light can obviate the need for an annealing step. In this system, photochemical activation serves essentially the same purpose as annealing, and the resulting semiconducting materials have device performance levels comparable to those produced using the high-temperature techniques. Amorphous metal-oxide semiconductors have emerged as potential replacements for organic and silicon materials in thin-film electronics. The high carrier mobility in the amorphous state, and excellent large-area uniformity, have extended their applications to active-matrix electronics, including displays, sensor arrays and X-ray detectors 1 , 2 , 3 , 4 , 5 , 6 , 7 . Moreover, their solution processability and optical transparency have opened new horizons for low-cost printable and transparent electronics on plastic substrates 8 , 9 , 10 , 11 , 12 , 13 . But metal-oxide formation by the sol–gel route requires an annealing step at relatively high temperature 2 , 14 , 15 , 16 , 17 , 18 , 19 , which has prevented the incorporation of these materials with the polymer substrates used in high-performance flexible electronics. Here we report a general method for forming high-performance and operationally stable metal-oxide semiconductors at room temperature, by deep-ultraviolet photochemical activation of sol–gel films. Deep-ultraviolet irradiation induces efficient condensation and densification of oxide semiconducting films by photochemical activation at low temperature. This photochemical activation is applicable to numerous metal-oxide semiconductors, and the performance (in terms of transistor mobility and operational stability) of thin-film transistors fabricated by this route compares favourably with that of thin-film transistors based on thermally annealed materials. The field-effect mobilities of the photo-activated metal-oxide semiconductors are as high as 14 and 7 cm 2  V −1  s −1 (with an Al 2 O 3 gate insulator) on glass and polymer substrates, respectively; and seven-stage ring oscillators fabricated on polymer substrates operate with an oscillation frequency of more than 340 kHz, corresponding to a propagation delay of less than 210 nanoseconds per stage.

Volatile compounds not only contribute to the distinct flavors and aromas found in foods and beverages, but can also serve as indicators for spoilage, contamination, or the presence of potentially harmful substances. As the odor of food raw materials and products carries valuable information about their state, gas sensors play a pivotal role in ensuring food safety and quality at various stages of its production and distribution. Among gas detection devices that are widely used in the food industry, metal oxide semiconductor (MOS) gas sensors are of the greatest importance. Ongoing research and development efforts have led to significant improvements in their performance, rendering them immensely useful tools for monitoring and ensuring food product quality; however, aspects related to their limited selectivity still remain a challenge. This review explores various strategies and technologies that have been employed to enhance the selectivity of MOS gas sensors, encompassing the innovative sensor designs, integration of advanced materials, and improvement of measurement methodology and pattern recognize algorithms. The discussed advances in MOS gas sensors, such as reducing cross-sensitivity to interfering gases, improving detection limits, and providing more accurate assessment of volatile organic compounds (VOCs) could lead to further expansion of their applications in a variety of areas, including food processing and storage, ultimately benefiting both industry and consumers.

HighlightsLatest progress on flexible room temperature (FRT) gas sensor based on metal oxide semiconductors (MOS) is comprehensively reviewed.FRT gas sensor based on pristine MOS and MOS modified with noble metal nanoparticles, organic polymers, carbon based materials and transition metal dichalcogenide materials are meticulously reviewed.The gas sensing mechanism of MOS chemiresistive gas sensors are introduced and the applications, future perspectives, and challenges of FRT gas sensors are also proposed.With the rapid development of the Internet of Things, there is a great demand for portable gas sensors. Metal oxide semiconductors (MOS) are one of the most traditional and well-studied gas sensing materials and have been widely used to prepare various commercial gas sensors. However, it is limited by high operating temperature. The current research works are directed towards fabricating high-performance flexible room-temperature (FRT) gas sensors, which are effective in simplifying the structure of MOS-based sensors, reducing power consumption, and expanding the application of portable devices. This article presents the recent research progress of MOS-based FRT gas sensors in terms of sensing mechanism, performance, flexibility characteristics, and applications. This review comprehensively summarizes and discusses five types of MOS-based FRT gas sensors, including pristine MOS, noble metal nanoparticles modified MOS, organic polymers modified MOS, carbon-based materials (carbon nanotubes and graphene derivatives) modified MOS, and two-dimensional transition metal dichalcogenides materials modified MOS. The effect of light-illuminated to improve gas sensing performance is further discussed. Furthermore, the applications and future perspectives of FRT gas sensors are also discussed.

To solve the energy crisis and environmental issues, it is essential to create effective and sustainable energy conversion and storage technologies. Traditional materials for energy conversion and storage however have several drawbacks, such as poor energy density and inadequate efficiency. The advantages of MOF-based materials, such as pristine MOFs, also known as porous coordination polymers, MOF composites, and their derivatives, over traditional materials, have been thoroughly investigated. These advantages stem from their high specific surface area, highly adjustable structure, and multifunctional nature. MOFs are promising porous materials for energy storage and conversion technologies, according to research on their many applications. Moreover, MOFs have served as sacrificial materials for the synthesis of different nanostructures for energy applications and as support substrates for metals, metal oxides, semiconductors, and complexes. One of the most intriguing characteristics of MOFs is their porosity, which permits space on the micro- and meso-scales, revealing and limiting their functions. The main goals of MOF research are to create high-porosity MOFs and develop more efficient activation techniques to preserve and access their pore space. This paper examines the porosity tunable mixed and hybrid MOF, pore architecture, physical and chemical properties of tunable MOF, pore conditions, market size of MOF, and the latest development of MOFs as precursors for the synthesis of different nanostructures and their potential uses.