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Tungsten oxide (WO3) is widely used as a functional material for “smart windows” due to its excellent electrochromic properties, however it is difficult to overcome the conflict between its optical modulation and cyclic stability. In this work, WO3 thin films with different crystal structures were prepared by DC reactive magnetron sputtering method. The effects of substrate temperature on the structure, composition, and electrochromic properties of WO3 films were investigated. The results show that the crystallinity of the WO3 film increases with increasing deposition temperature, indicating that temperature plays an important role in controlling the structure of the WO3 film. For WO3 thin films formed at a substrate temperature of 573 K, the film is in an amorphous state to a crystalline transition state. From X-ray diffraction (XRD) analysis, the thin film showed a weak WO3 crystallization peak, which was in the composite structure of amorphous and nanocrystalline. Which has the best electrochromic properties, with modulation amplitude of 73.1% and bleached state with a coloration efficiency of 42.9 cm2/C at a wavelength of 550 nm. Even after 1500 cycles, the optical modulation still contains 65.4%, delivering the best cyclic stability.

In the present research diamond-like carbon (DLC) films containing 4–29 at.% of silicon were deposited by reactive magnetron sputtering of carbon target. Study by X-ray photoelectron spectroscopy revealed the presence of Si–C bonds in the films. Nevertheless, a significant amount of Si–O–C and Si–Ox bonds was present too. The shape of the Raman scattering spectra of all studied diamond-like carbon containing silicon (DLC:Si) films was typical for diamond-like carbon. However, some peculiarities related to silicon doping were found. Studies on the dependence of DLC:Si of the optical transmittance spectra on the Si atomic concentration have shown that doping by silicon affects linear, as well as nonlinear, optical properties of the films. It is shown that the normalized reflectance of DLC:Si films decreased with the increased exciting light fluence. No clear relation between the normalized reflectance and photoexcited charge carrier relaxation time was found. It was suggested that that the normalized reflectance decrease with fluence can be related to nonlinear optical properties of the hydrogenated diamond-like carbon phase in DLC:Si film.

Titanium nitride film was deposited on a glass substrate by reactive magnetron sputtering. The composition and structure of the film were studied by SEM, XRD and XPS. The results show that the atomic ratio of titanium to nitrogen in the film is TiN1.05, and the crystal orientation of the film is mainly TiN (111). The optical properties of titanium nitride films in the wavelength range from 380nm to 2500nm were studied in detail using a spectral ellipsometer. Four commonly used dispersion models including Gaussian and Lorentz are compared to resolve the fitting effect of the ellipsometry spectrum of titanium nitride films. The fitting results were validated by reflection and transmission spectra. The results show that the Lorentz model combined with the Drude model is the best fit for the elliptic spectrum of titanium nitride films over the entire range of bands tested.

Compact ZnO (wurtzite) thin films are prepared on four different substrates by (i) spray pyrolysis or (ii) pulsed reactive magnetron sputtering combined with a radio frequency electron cyclotron wave resonance plasma. Films are characterized by AFM, XRD, Kelvin probe, cyclic voltammetry, electrochemical impedance spectroscopy, and UV photoelectrochemistry. Film morphologies, defect concentrations, crystallite size, and orientation provided specific fingerprints for the electronic structure of ZnO close to the conduction band minimum. Fabricated films are referenced, if relevant, to a model system based on a wurtzite single crystal with either Zn-face or O-face termination. Kelvin probe measurements of the ZnO/air interface distinguished effects of annealing and UV excitation, which are attributed to removal of oxygen vacancies close to the surface. In turn, the work function, at the electrochemical interface, specifically addressed the growth protocol of the ZnO electrodes but not the effects of crystallinity and annealing. Finally, high photocurrents of water oxidation are observed exclusively on virgin films. This effect is then discussed in terms of photocorrosion, and work function changes due to UV light. Graphical Abstract

The conditions for stoichiometric thin film deposition by reactive magnetron sputtering include the existence of a given ratio between the flux of the sputtered metallic atoms and the flux of the reactive gas molecules on the surface of the substrate. To meet this condition, a relationship based on the Berg model is formulated between the partial pressure of the reactive gas, the target coverage, and the sputtering current density. Given that the target coverage can be estimated online from the sputtering voltage, it is possible to create a control structure where the reactive gas partial pressure is controlled to obtain stoichiometric thin film deposition. Simulation results are presented based on the dynamic model of the sputtering process.

Appropriate conditions for depositing hard Cr2O3 coatings by reactive sputtering techniques have yet to be defined. To fill this gap, the effect of principal deposition parameters, including deposition pressure, temperature, Cr-target voltage, and Ar/O2 ratio, on both the structure and mechanical properties of chromium oxide coatings was investigated. A relationship between processing, structure, and the mechanical properties of chromium oxide coatings was established. Scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, and X-ray Photoelectron Spectroscopy (XPS) were used to characterize the morphology, structure, and chemical compositions of the coatings that were prepared. An optical profilometer was employed to measure both the roughness and thickness of the coatings. The hardness and Young’s modulus of the coatings both as-deposited and after annealing conditions were measured by nanoindentation. The results showed that depositing hard Cr2O3 coatings is a highly critical task, requiring special deposition conditions. Cr2O3 coatings with a high hardness of approximately 25 GPa could be achieved at room temperature, at a low pressure of 1.6 × 10−1 Pa, where Cr-target voltage and oxygen content were 260 V and between 15–25 vol % of total gas, respectively. A dense stoichiometric Cr2O3 structure was found to be responsible for the high chromium oxide coating hardness observed.

Memristors with resistive switching capabilities are vital for information storage and brain-inspired computing, making them a key focus in current research. This study demonstrates non-volatile analog resistive switching behavior in Al/TiOx/TiN/Si(n++)/Al memristive devices. Analog resistive switching offers gradual, controllable conductance changes, which are essential for mimicking brain-like synaptic behavior, unlike digital/abrupt switching. The amorphous titanium oxide (TiOx) active layer was deposited using the pulsed-DC reactive magnetron sputtering technique. The impact of increasing the oxide thickness on the electrical performance of the memristors was investigated. Electrical characterizations revealed stable, forming-free analog resistive switching, achieving endurance beyond 300 DC cycles. The charge conduction mechanisms underlying the current–voltage (I–V) characteristics are analyzed in detail, revealing the presence of ohmic behavior, Schottky emission, and space-charge-limited conduction (SCLC). Experimental results indicate that increasing the TiOx film thickness from 31 to 44 nm leads to a notable change in the current conduction mechanism. The results confirm that the memristors have good stability (>1500 s) and are capable of exhibiting excellent long-term potentiation (LTP) and long-term depression (LTD) properties. The analog switching driven by oxygen vacancy-induced barrier modulation in the TiOx/TiN interface is explained in detail, supported by a proposed model. The remarkable switching characteristics exhibited by the TiOx-based memristive devices make them highly suitable for artificial synapse applications in neuromorphic computing systems.

Resistive switching (RS) phenomena are nowadays one of the most studied topics in the area of microelectronics. It can be observed in Metal–Insulator–Metal (MIM) structures that are the basis of resistive switching random-access memories (RRAMs). In the case of commercial use of RRAMs, it is beneficial that the applied materials would have to be compatible with Complementary Metal-Oxide-Semiconductor (CMOS) technology. Fabricating methods of these materials can determine their stoichiometry and structural composition, which can have a detrimental impact on the electrical performance of manufactured devices. In this study, we present the influence of the Ar/N2 ratio during reactive magnetron sputtering of titanium nitride (TiN) electrodes on the resistive switching behavior of MIM devices. We used silicon oxide (SiOx) as a dielectric layer, which was characterized by the same properties in all fabricated MIM structures. The composition of TiN thin layers was controlled by tuning the Ar/N2 ratio during the deposition process. The fabricated conductive materials were characterized in terms of chemical and structural properties employing X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) analysis. Structural characterization revealed that increasing the Ar content during the reactive sputtering process affects the crystallite size of the deposited TiN layer. The resulting crystallite sizes ranged from 8 Å to 757.4 Å. The I-V measurements of fabricated devices revealed that tuning the Ar/N2 ratio during the deposition of TiN electrodes affects the RS behavior. Our work shows the importance of controlling the stoichiometry and structural parameters of electrodes on resistive switching phenomena.

In recent years, significant attention has been directed toward the development of coating materials capable of tailoring surface properties for various functional applications. Transition metal nitrides, in particular, have garnered interest due to their superior physical and chemical properties, including high hardness, excellent wear resistance, and strong corrosion resistance. In this study, a fabrication process for CrN-based thin films was developed by combining reactive direct current magnetron sputtering (dcMS) with post-deposition annealing in air. CrN coatings were deposited by reactive dcMS using different argon-nitrogen (Ar:N2) gas ratios (4:1, 3:1, 2:1, and 1:1), followed by annealing at 550 °C for 1.5 h in ambient air. XRD and EDS analysis revealed that this treatment results in the formation of a composite phase comprising CrN and Cr2O3. The resulting coating exhibited favorable mechanical and tribological properties, including a maximum hardness of 12 GPa, a low wear coefficient of 0.254 and a specific wear rate of 7.05 × 10−6 mm3/N·m, making it a strong candidate for advanced protective coating applications.

Titanium oxide (TiO2) and oxynitride (N-TiO2) coatings can increase nitinol stents’ cytocompatibility with endothelial cells. Methods of TiO2 and N-TiO2 sputtering and cytocompatibility assessments vary significantly among different research groups, making it difficult to compare results. The aim of this work was to develop an integral cytocompatibility index (ICI) and a decision tree algorithm (DTA) using the “EA.hy926 cell/TiO2 or N-TiO2 coating” model and to determine the optimal cytocompatible coating. Magnetron sputtering was performed in a reaction gas medium with various N2:O2 ratios and bias voltages. The samples’ morphology was studied by scanning electron microscopy (SEM) and Raman spectroscopy. The cytocompatibility of the coatings was evaluated in terms of their cytotoxicity, adhesion, viability, and NO production. The ICI and DTA were developed to assess the cytocompatibility of the samples. Both algorithms demonstrated the best cytocompatibility for the sample sputtered at Ubias = 0 V and a gas ratio of N2:O2 = 2:1, in which the rutile phase dominated. The DTA provided more detailed information about the cytocompatibility, which depended on the sputtering mode, surface morphology, and crystalline phase. The proposed mathematical models relate the cytocompatibility and the studied physical characteristics.