Asset Details
Do you wish to reserve the book?
Influence of Dopant Concentration on Dislocation Distributions in 150mm 4H SiC Wafers
Hey, we have placed the reservation for you!
By the way, why not check out events that you can attend while you pick your title.
Oops! Something went wrong.
Looks like we were not able to place the reservation. Kindly try again later.
Are you sure you want to remove the book from the shelf?
Influence of Dopant Concentration on Dislocation Distributions in 150mm 4H SiC Wafers
Do you wish to request the book?
Influence of Dopant Concentration on Dislocation Distributions in 150mm 4H SiC Wafers
Please be aware that the book you have requested cannot be checked out. If you would like to checkout this book, you can reserve another copy
We have requested the book for you!
Your request is successful and it will be processed during the Library working hours. Please check the status of your request in My Requests.
Oops! Something went wrong.
Looks like we were not able to place your request. Kindly try again later.
Journal Article
Influence of Dopant Concentration on Dislocation Distributions in 150mm 4H SiC Wafers
2019
Overview
Shifts in the spatial distribution of threading dislocations in 150 mm 4H SiC wafers were examined as a response to intentional changes in both the flow of the nitrogen source gas used to control resistivity during bulk crystal growth, and the growth rate. The density of threading edge and screw dislocations was found to be more evenly distributed in wafers produced under a high-growth rate, low-resistivity process. This result corresponded to a flattening of the resistivity distribution, and a ~34% reduction in on-and off-facet resistivity differential. The effect was attributed to regularized 4H island coalescence due to modulation of step terrace width.
Publisher
Trans Tech Publications Ltd
