Journal Article

Effect of SiO2 addition on the microstructure and electrical properties of ZnO-based varistors

Zhen-hong Wu Jian-hui Fang Dong Xu Qin-dong Zhong Li-yi Shi

2010

Overview

The microstructure and electrical properties of ZnO-based varistors with the SiO2 content in the range of 0-1.00mol% were prepared by a solid reaction route. The varistors were characterized by scanning electron microscopy, X-ray diffraction, energy-dispersive X-ray spectrometry, inductively coupled plasma-atomic emission spectrometry, and X-ray photoelectron spectroscopy. The results indicate that the average grain size of ZnO decreases with the SiO2 content increasing. A new second phase （Zn2SiO4） and a glass phase （Bi2SiO5） are found. Element Si mainly exists in the grain boundary and plays an important role in controlling the Bi2O3 vaporization. The electric measurement shows that the incorporation of SiO2 can significantly improve the nonlinear properties of ZnO-based varistors, and the nonlinear coefficients of the varistors with SiO2 are in the range of 36.8-69.5. The varistor voltage reaches the maximum value of 463 V/mm and the leakage current reaches the minimum value of 0.11 μA at the SiO2 content of 0.75mol%.

• Publisher: University of Science and Technology Beijing,Springer Nature B.V
• Subject: Bismuth trioxide / Ceramics / Characterization and Evaluation of Materials / Chemistry and Materials Science / Composites / Corrosion and Coatings / Electrical properties / Electronic devices / Glass / Grain boundaries / Grain size / Inductively coupled plasma / Leakage current / Materials Science / Metallic Materials / Microstructure / Natural Materials / Nonlinearity / Photoelectrons / Scientific imaging / Silicon dioxide / SiO2含量 / Spectrometry / Spectroscopy / Surfaces and Interfaces / Thin Films / Tribology / Vaporization / Varistors / X ray photoelectron spectroscopy / X-ray diffraction / X-ray spectroscopy / X-rays / X射线光电子能谱 / Zinc oxide / Zinc silicates / 二氧化硅含量 / 微观结构 / 扫描电子显微镜 / 氧化锌压敏电阻 / 电性能 / 电感耦合等离子体原子发射光谱