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Polarization rotation-based all-optical AND gate using single semiconductor optical amplifier and implementation of a majority gate
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Polarization rotation-based all-optical AND gate using single semiconductor optical amplifier and implementation of a majority gate
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Journal Article
Polarization rotation-based all-optical AND gate using single semiconductor optical amplifier and implementation of a majority gate
2023
Overview
Semiconductor optical amplifier-based polarization rotation is utilized in designing all-optical AND gate at 100 Gbps. The AND gate shows high extinction ratio (ER ∼ 15 dB), contrast ratio (CR ∼ 18 dB) and quality factor (Q-factor ∼ 16 dB). The effect of the amplified spontaneous emission noise on the performances is also investigated. The AND gate has relative eye opening (REO) varying from 93.52 to 97.1% for 10–30 dB unsaturated gain. Using the AND gate a majority voting gate is designed and analyzed and has Q ∼ 11.7 dB with REO ∼ 91%.
Publisher
De Gruyter,Walter de Gruyter GmbH
