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Uniform Non-stoichiometric Titanium Nitride Thin Films for Improved Kinetic Inductance Detector Arrays
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Uniform Non-stoichiometric Titanium Nitride Thin Films for Improved Kinetic Inductance Detector Arrays
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Journal Article
Uniform Non-stoichiometric Titanium Nitride Thin Films for Improved Kinetic Inductance Detector Arrays
2016
Overview
We describe the fabrication of homogeneous sub-stoichiometric titanium nitride films for microwave kinetic inductance detector (KID) arrays. Using a 6
′
′
sputtering target and a homogeneous nitrogen inlet, the variation of the critical temperature over a 2
′
′
wafer was reduced to
<
25 %. Measurements of a 132-pixel KID arrays from these films reveal a sensitivity of 16 kHz/pW in the 100 GHz band, comparable to the best aluminum KIDs. We measured a noise equivalent power of NEP
=
3.6
×
10
-
15
W/Hz
1
/
2
. Finally, we describe possible routes to further improve the performance of these TiN KID arrays.
Publisher
Springer US
