Journal Article

Influence of HfAlOx in DC, RF and Microwave Noise Performance of Dual-Channel Single-Gate InAs MOSHEMT

Girish Shankar, M., Poornachandran, R., Sujatha, G., Saravana Kumar, R., Mohankumar, N.

2021

Overview

This paper analyzes the effect of a HfAlO x dielectric in a dual-channel (DC)single-gate (SG) metal oxide semiconductor high-electron-mobility transistor (DCSG-MOSHEMT) on improving device performance metrics. The small-signal analog/RF and noise performance of the device are explored in detail. The physics-based TCAD simulator tool is utilized to characterize the device. A peak drain current of 1.52 mA/µm is achieved due to superior sheet carrier density ( n s ) of 1.5×10 18 cm −3 and low ON resistance. Further, a high positive threshold voltage ( V T ) of 0.214 V and a peak transconductance of 1.8 ms/µm is achieved with HfAlO x as the dielectric. Moreover, high cutoff frequency ( f T ) of 530 GHz and maximum frequency of oscillation ( f max ) of 840 GHz at V ds  = 0.5 V is achieved. The device exhibits a minimum noise figure of 1.32 dB at V gs  = 0.3 V and V ds  = 0.5 V. With low noise over a large bandwidth and high-frequency performance, this device can be utilized to design low-noise amplifiers (LNA) for broadband applications.

• Publisher: Springer US,Springer Nature B.V
• Subject: Amplifier design / Broadband / Carrier density / Characterization and Evaluation of Materials / Chemistry and Materials Science / Electronics and Microelectronics / Instrumentation / Low noise / Materials Science / Metal oxide semiconductors / Noise / Optical and Electronic Materials / Original Research Article / Performance measurement / Solid State Physics / Threshold voltage / Transconductance / Transistors