Asset Details
Do you wish to reserve the book?
Ultrasensitive solar-blind ultraviolet detection and optoelectronic neuromorphic computing using α-In2Se3 phototransistors
Hey, we have placed the reservation for you!
By the way, why not check out events that you can attend while you pick your title.
Oops! Something went wrong.
Looks like we were not able to place the reservation. Kindly try again later.
Are you sure you want to remove the book from the shelf?
Ultrasensitive solar-blind ultraviolet detection and optoelectronic neuromorphic computing using α-In2Se3 phototransistors
Do you wish to request the book?
Ultrasensitive solar-blind ultraviolet detection and optoelectronic neuromorphic computing using α-In2Se3 phototransistors
Please be aware that the book you have requested cannot be checked out. If you would like to checkout this book, you can reserve another copy
We have requested the book for you!
Your request is successful and it will be processed during the Library working hours. Please check the status of your request in My Requests.
Oops! Something went wrong.
Looks like we were not able to place your request. Kindly try again later.
Journal Article
Ultrasensitive solar-blind ultraviolet detection and optoelectronic neuromorphic computing using α-In2Se3 phototransistors
2023
Overview
Detection of solar-blind ultraviolet (SB-UV) light is important in applications like confidential communication, flame detection, and missile warning system. However, the existing SB-UV photodetectors still show low sensitivities. In this work, we demonstrate the extraordinary SB-UV detection performance of α-In
2
Se
3
phototransistors. Benefiting from the coupled semiconductor and ferroelectricity property, the phototransistor has an ultraweak detectable power of 17.85 fW, an ultrahigh gain of 1.2 × 10
6
, a responsivity of 2.6 × 10
5
A/W, a detectivity of 1.3 × 10
16
Jones and an ultralow noise-equivalent-power of 4.2 × 10
−20
W/Hz
1/2
for 275 nm light. Its performance exceeds most other UV detectors, even including commercial photomultiplier tubes and avalanche photodiodes. It can be also implemented as an optoelectronic synapse for neuromorphic computing. A 784×300×10 artificial neural network (ANN) based on this optoelectronic synapse is constructed and demonstrated with a high recognition accuracy and good noise-tolerance for the Fashion-MNIST dataset. These extraordinary features endow this phototransistor with the potential for constructing advanced SB-UV detectors and intelligent hardware.
Publisher
Higher Education Press,Springer Nature B.V
Subject
