Journal Article

Enhancing dielectric properties of bentonite with Ce and Zn: structural insights and industrial applications

Dhahri, Jamila, Ouni, Hedia, Khalafalla, Mohammad, Dhahri, Khaled, Bashal, Ali H.

2024

Overview

This study uses an incipient wet impregnation method to look into the structural and dielectric properties of Bentonite that have been changed by adding different amounts of Ce and Zn. X-ray diffraction (XRD) analysis showed that the montmorillonite phase was the most common in Ce- and Zn-doped bentonite. Silicon dioxide (SiO 2 ) and quartz (Q) were also found. Scanning electron microscopy (SEM) demonstrated enhanced platelet aggregation and porous structures in doped compounds. Energy-dispersive X-ray spectroscopy (EDX) confirmed the presence of Si, Al, Na, Ce, Zn, Ca, Mg, Cl, Fe, and K elements. Dielectric analysis, focusing on frequency and temperature dependence, unveiled an inverse relationship between frequency and the dielectric constant. Additionally, a strong correlation between temperature and dielectric properties was established through regression equations, indicating an increase in dielectric constant with temperature. Electric modulus analysis showed dispersion at high frequencies, suggesting charge carrier mobility. The AC conductivity analysis showed that the conductivity consistently decreased as the temperature rose. There were clear frequency-independent plateaus and intrinsic charge carrier relaxation that were seen. A fitting analysis showed that charge carriers hopped and the dielectric relaxed, and adding Ce and Zn made the material less conductive. The novelty of this paper lies in its focus on examining the dielectric characteristics of doped materials based on bentonite, particularly concerning the incorporation of Zn and Ce. Graphical Abstract Highlights Investigation of structural and dielectric properties of Bentonite modified with Ce and Zn. Utilization of incipient wet impregnation technique for modification. Enhanced platelet aggregation and porous structures observed in doped compounds via SEM. Dispersion at high frequencies indicated by electric modulus analysis. Decrease in conductivity with rising temperature observed in AC conductivity analysis. Charge carrier hopping, and dielectric relaxation mechanisms identified through fitting analysis. Incorporation of Ce and Zn resulted in reduced conductivity in the materials.

• Publisher: Springer US,Springer Nature B.V
• Subject: Aluminum / Bentonite / Carrier mobility / Ceramics / Chemistry and Materials Science / Composites / Current carriers / Dielectric properties / Dielectric relaxation / Dielectric strength / Glass / Hopping conduction / Industrial applications / Inorganic Chemistry / Magnesium / Materials Science / Montmorillonite / Nanotechnology / Natural Materials / Optical and Electronic Materials / Original Paper / Permittivity / Scanning electron microscopy / Silicon dioxide / Temperature dependence / Thermal analysis / Zinc