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Linearity Distortion & Thermal Stability Analysis of Negative Capacitance based Cylindrical Junction-less Transistors (NC-CyJLT)
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Linearity Distortion & Thermal Stability Analysis of Negative Capacitance based Cylindrical Junction-less Transistors (NC-CyJLT)
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Journal Article
Linearity Distortion & Thermal Stability Analysis of Negative Capacitance based Cylindrical Junction-less Transistors (NC-CyJLT)
2022
Overview
The negative capacitance effect on MOS transistors has lately gained lot of momentum due to the use of ferroelectric material in the gate. They have attracted much attention from researchers due to their improved performance at low power supplies. This work presents the simulation and analysis of NC-CyJLT for analog/RF, linearity distortion, and thermal stability. The analytical modeling of surface potential using the parabolic approximation and Landau-Khalatnikov (L-K) equation has been performed and compared with simulation results. This device combines the advantages of negative capacitance, surrounding gate, and junction-less techniques together, resulting in improved performance and reliability. Analog/RF and linearity distortion analysis of NC-CyJLT have been compared with conventional CyJLT to study the effect of negative capacitance. Further, thermal analysis of NC-CyJLT has been performed to study its operation over a wide range of temperatures. Through analysis, it has been observed that the use of ferroelectric material in the gate stack improves electrostatic, analog/RF performance in comparison to the conventional CyJLT. The simulation results also reveal that the NC-CyJLT device has reduced transconductance derivatives (g
m2
and g
m3
), intermodulation distortion 3 (IMD
3
), and increased voltages intercept points (VIP
2
and VIP
3
). The input intercept point 3(IIP
3
) also increases, thus indicating improved linearity performance with reduced distortion. Thermal stability analysis suggests that NC-CyJLT's performance degrades with an increase in temperature beyond the Curie temperature of the ferroelectric material. Hence, the analysis and study of the NC-CyJLT device confirms that the device finds application in low power and high-density analog/RF circuits.
Publisher
Springer Netherlands,Springer Nature B.V
Subject
