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Temperature-Dependent I–V Characteristics of In/p-SnSe Schottky Diode
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Temperature-Dependent I–V Characteristics of In/p-SnSe Schottky Diode
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Journal Article
Temperature-Dependent I–V Characteristics of In/p-SnSe Schottky Diode
2021
Overview
Tin selenide (SnSe), a member of the IV-VI group, belongs to the layered transition metal chalcogenide (TMC) family. As TMCs are chemically inert, and have a binary layered structure of Sn-X (X = S, Se, Te) type, they are used widely in the areas of photovoltaic, electronic, and optoelectronic devices. In the present study, a direct vapor transport technique was used to grow single crystals. The synthesized crystals were examined with energy-dispersive analysis of x-rays, optical microscopy-scanning electron microscopy, and x-ray diffraction techniques to investigate the purity, surface morphology, and phase, respectively. The present work reports the use of a layered monochalcogenide single-crystal substrate for preparation of metal-semiconductor or Schottky junction devices. The In/p-SnSe Schottky diode was prepared by a thermal evaporation method. Analysis for the In/p-SnSe Schottky contact is based on the measurement of the current–voltage characteristics of the Schottky diode within the temperature range (313 K < T < 413 K). Characteristics were analyzed using thermionic emission theory and Schottky barrier diode parameters including barrier height, ideality factor, and series resistance, which were obtained and analyzed using a Ln (I)-V method and Cheung’s method. This work also reports the anisotropic current–voltage characteristics as well as the alteration in the Schottky barrier diode parameters at high temperature.
Publisher
Springer US,Springer Nature B.V
