Asset Details
Do you wish to reserve the book?
Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2
Hey, we have placed the reservation for you!
By the way, why not check out events that you can attend while you pick your title.
Oops! Something went wrong.
Looks like we were not able to place the reservation. Kindly try again later.
Are you sure you want to remove the book from the shelf?
Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2
Do you wish to request the book?
Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2
Please be aware that the book you have requested cannot be checked out. If you would like to checkout this book, you can reserve another copy
We have requested the book for you!
Your request is successful and it will be processed during the Library working hours. Please check the status of your request in My Requests.
Oops! Something went wrong.
Looks like we were not able to place your request. Kindly try again later.
Journal Article
Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2
2018
Overview
Materials research has driven the development of modern nano-electronic devices. In particular, research in magnetic thin films has revolutionized the development of spintronic devices
1
,
2
because identifying new magnetic materials is key to better device performance and design. Van der Waals crystals retain their chemical stability and structural integrity down to the monolayer and, being atomically thin, are readily tuned by various kinds of gate modulation
3
,
4
. Recent experiments have demonstrated that it is possible to obtain two-dimensional ferromagnetic order in insulating Cr
2
Ge
2
Te
6
(ref.
5
) and CrI
3
(ref.
6
) at low temperatures. Here we develop a device fabrication technique and isolate monolayers from the layered metallic magnet Fe
3
GeTe
2
to study magnetotransport. We find that the itinerant ferromagnetism persists in Fe
3
GeTe
2
down to the monolayer with an out-of-plane magnetocrystalline anisotropy. The ferromagnetic transition temperature,
T
c
, is suppressed relative to the bulk
T
c
of 205 kelvin in pristine Fe
3
GeTe
2
thin flakes. An ionic gate, however, raises
T
c
to room temperature, much higher than the bulk
T
c
. The gate-tunable room-temperature ferromagnetism in two-dimensional Fe
3
GeTe
2
opens up opportunities for potential voltage-controlled magnetoelectronics
7
–
11
based on atomically thin van der Waals crystals.
Monolayers of Fe
3
GeTe
2
exhibit itinerant ferromagnetism with an out-of-plane magnetocrystalline anisotropy; ionic gating raises the ferromagnetic transition temperature of few-layer Fe
3
GeTe
2
to room temperature.
Publisher
Nature Publishing Group UK
