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Radiation tolerance studies of silicon microstrip sensors for the CBM Silicon Tracking System
by
Momot, I.
, Singla, M.
, Teklishyn, M.
, Heuser, J.
, Pugatch, V.
in
Fluence
/ Physics
/ Prototypes
/ Radiation
/ Radiation tolerance
/ Sensors
/ Silicon
/ Tracking systems
2016
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Radiation tolerance studies of silicon microstrip sensors for the CBM Silicon Tracking System
by
Momot, I.
, Singla, M.
, Teklishyn, M.
, Heuser, J.
, Pugatch, V.
in
Fluence
/ Physics
/ Prototypes
/ Radiation
/ Radiation tolerance
/ Sensors
/ Silicon
/ Tracking systems
2016
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Radiation tolerance studies of silicon microstrip sensors for the CBM Silicon Tracking System
Journal Article
Radiation tolerance studies of silicon microstrip sensors for the CBM Silicon Tracking System
2016
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Overview
Double-sided silicon microstrip sensors will be used in the Silicon Tracking System of the CBM experiment. During experimental run they will be exposed to a radiation field of up to 1x1014 1 MeV neq cm-2. Radiation tolerance studies were made on prototypes from two different vendors. Results from these prototype detectors before and after irradiation to twice that neutron fluence are discussed.
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