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Radiation tolerance studies of silicon microstrip sensors for the CBM Silicon Tracking System
Radiation tolerance studies of silicon microstrip sensors for the CBM Silicon Tracking System
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Radiation tolerance studies of silicon microstrip sensors for the CBM Silicon Tracking System
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Radiation tolerance studies of silicon microstrip sensors for the CBM Silicon Tracking System
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Radiation tolerance studies of silicon microstrip sensors for the CBM Silicon Tracking System
Radiation tolerance studies of silicon microstrip sensors for the CBM Silicon Tracking System
Journal Article

Radiation tolerance studies of silicon microstrip sensors for the CBM Silicon Tracking System

2016
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Overview
Double-sided silicon microstrip sensors will be used in the Silicon Tracking System of the CBM experiment. During experimental run they will be exposed to a radiation field of up to 1x1014 1 MeV neq cm-2. Radiation tolerance studies were made on prototypes from two different vendors. Results from these prototype detectors before and after irradiation to twice that neutron fluence are discussed.
Publisher
IOP Publishing