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An Analytical Solution for Energy Harvesting Using a High-Order Shear Deformation Model in Functionally Graded Beams Subjected to Concentrated Moving Loads
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An Analytical Solution for Energy Harvesting Using a High-Order Shear Deformation Model in Functionally Graded Beams Subjected to Concentrated Moving Loads
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Journal Article
An Analytical Solution for Energy Harvesting Using a High-Order Shear Deformation Model in Functionally Graded Beams Subjected to Concentrated Moving Loads
2025
Overview
This study presents a high-order shear deformation theory (HSDT)-based model for evaluating the energy harvesting performance of functionally graded material (FGM) beams integrated with a piezoelectric layer and subjected to a moving concentrated load at constant velocity. The governing equations are derived using Hamilton’s principle, and the dynamic response is obtained through the State Function Method with trigonometric mode shapes. The output voltage and harvested power are calculated based on piezoelectric constitutive relations. A comparative analysis with homogeneous isotropic beams demonstrates that HSDT yields more accurate predictions than the Classical Beam Theory (CBT), especially for thick beams; for instance, at a span-to-thickness ratio of h/L = 12.5, HSDT predicts increases of approximately 6%, 7%, and 12% in displacement, voltage, and harvested power, respectively, compared to CBT. Parametric studies further reveal that increasing the load velocity significantly enhances the strain rate in the piezoelectric layer, resulting in higher voltage and power output, with the latter exhibiting quadratic growth. Moreover, increasing the material gradation index n reduces the beam’s effective stiffness, which amplifies vibration amplitudes and improves energy conversion efficiency. These findings underscore the importance of incorporating shear deformation and material gradation effects in the design and optimization of piezoelectric energy harvesting systems using FGM beams subjected to dynamic loading.
Publisher
MDPI AG
Subject
