Journal Article

Highly scalable non-volatile and ultra-low-power phase-change nanowire memory

Jung, Yeonwoong, Lee, Se-Ho, Agarwal, Ritesh

2007

Overview

The search for a universal memory storage device that combines rapid read and write speeds, high storage density and non-volatility is driving the exploration of new materials in nanostructured form 1 , 2 , 3 , 4 , 5 , 6 , 7 . Phase-change materials, which can be reversibly switched between amorphous and crystalline states, are promising in this respect, but top-down processing of these materials into nanostructures often damages their useful properties 4 , 5 . Self-assembled nanowire-based phase-change material memory devices offer an attractive solution owing to their sub-lithographic sizes and unique geometry, coupled with the facile etch-free processes with which they can be fabricated. Here, we explore the effects of nanoscaling on the memory-storage capability of self-assembled Ge 2 Sb 2 Te 5 nanowires, an important phase-change material. Our measurements of write-current amplitude, switching speed, endurance and data retention time in these devices show that such nanowires are promising building blocks for non-volatile scalable memory and may represent the ultimate size limit in exploring current-induced phase transition in nanoscale systems.

• Publisher: Nature Publishing Group UK,Nature Publishing Group
• Subject: Chemistry and Materials Science / Driving ability / Energy Transfer / Equipment Design / Equipment Failure Analysis / Information storage / Information Storage and Retrieval - methods / letter / Materials Science / Nanotechnology / Nanotechnology - instrumentation / Nanotechnology - methods / Nanotechnology and Microengineering / Nanotubes - chemistry / Nanotubes - ultrastructure / Nanowires / Phase transitions / Power / Retention / Retention time / Signal Processing, Computer-Assisted - instrumentation / Spectrum analysis