Journal Article

β-Ga2O3 Schottky Barrier Diodes with Near-Zero Turn-on Voltage and Breakdown Voltage over 3.6 kV

Cho, Kyu Jun, Chang, Woojin, Lee, Hoon-Ki, Mun, Jae Kyoung

2024

Overview

Lateral Schottky barrier diodes (SBD) were fabricated on a molecular beam epitaxy (MBE) grown, Si-doped β -Ga 2 O 3 wafer measuring 1 cm by 1.5 cm. These devices featured varying anode to cathode distances and included anode connected field plate structures. A device with a 25 μm anode to cathode spacing exhibited a high breakdown voltage exceeding 3.6 kV. A smaller device with a 10 μm anode to cathode spacing demonstrated a R on,sp (specific on resistance) of 0.1508 Ω·cm 2 and a power figure of merit of 18.87 MW/cm 2 . The incorporation of titanium, characterized by a relatively low work function, as the Schottky contact enabled the achievement of a very low turn-on voltage and a sub-60 mV/dec subthreshold swing.

• Publisher: The Korean Institute of Electrical and Electronic Material Engineers (KIEEME),Springer Nature B.V,한국전기전자재료학회
• Subject: Breakdown / Cathodes / Chemistry and Materials Science / Diodes / Electric fields / Electric potential / Electric vehicles / Electronics and Microelectronics / Electrons / Epitaxial growth / Etching / Figure of merit / Gallium oxides / Instrumentation / Materials Science / Molecular beam epitaxy / Optical and Electronic Materials / Regular Paper / Schottky diodes / Titanium / Voltage / Work functions / 전기공학