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Influence of AZO amorphous structure on n-AZO/p-Cu2O heterojunction diode photoluminescence properties
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Influence of AZO amorphous structure on n-AZO/p-Cu2O heterojunction diode photoluminescence properties
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Journal Article
Influence of AZO amorphous structure on n-AZO/p-Cu2O heterojunction diode photoluminescence properties
2017
Overview
In this work two samples of Ag/Cu/Cu
2
O and Al:ZnO (AZO) multilayers, on glass substrates were prepared. The Ag/Cu layers were obtained by the physical vapor deposition (PVD) method, while the Cu
2
O and AZO layers were deposited by DC reactive magnetron sputtering. The structural and morphology properties of the considered samples were studied. The X-ray diffraction (XRD) showed that the first junction signifies a crystal structure of compounds of Ag, Cu and Cu
2
O, but the latter sample showed an amorphous structure. It was shown that the roughness of glass/Ag/Cu/Cu
2
O layers was substantially lower than the roughness of AZO layer deposited on glass substrate. In addition, the microstructure consideration revealed that the glass/Ag/Cu/Cu
2
O surface morphology was highly homogenous with average grain size of 35 nm. Moreover, we investigated the properties of the Cu
2
O/AZO heterojunction. The low turn-on voltage of about 0.64 V was obtained, which indicate that the heterojunction acts as a rectifier diode. The ideality factor was determined to be 10.28.
Publisher
Springer US,Springer Nature B.V
