Asset Details
Do you wish to reserve the book?
Design of High-Reliability Low-Dropout Regulator Combined with Silicon Controlled Rectifier-Based Electrostatic Discharge Protection Circuit Using Dynamic Dual Buffer
Hey, we have placed the reservation for you!
By the way, why not check out events that you can attend while you pick your title.
Oops! Something went wrong.
Looks like we were not able to place the reservation. Kindly try again later.
Are you sure you want to remove the book from the shelf?
Design of High-Reliability Low-Dropout Regulator Combined with Silicon Controlled Rectifier-Based Electrostatic Discharge Protection Circuit Using Dynamic Dual Buffer
Do you wish to request the book?
Design of High-Reliability Low-Dropout Regulator Combined with Silicon Controlled Rectifier-Based Electrostatic Discharge Protection Circuit Using Dynamic Dual Buffer
Please be aware that the book you have requested cannot be checked out. If you would like to checkout this book, you can reserve another copy
We have requested the book for you!
Your request is successful and it will be processed during the Library working hours. Please check the status of your request in My Requests.
Oops! Something went wrong.
Looks like we were not able to place your request. Kindly try again later.
Journal Article
Design of High-Reliability Low-Dropout Regulator Combined with Silicon Controlled Rectifier-Based Electrostatic Discharge Protection Circuit Using Dynamic Dual Buffer
2024
Overview
Overshoot and undershoot caused by the current load impact the accuracy of the required output voltage and circuit performance. The transient response issue in existing low-dropout (LDO) regulators is a dynamic specification that must be addressed at the design stage. This transient response is influenced by system parameters such as stability and gain. The LDO regulator suggested in this study is designed to minimize the change in output voltage by considerably enhancing the gain using a dynamic dual buffer structure. A dynamic dual buffer is utilized to effectively control undershoot and overshoot. Under the conditions that the input voltage range is from 3.3 to 4.5 V, the maximum load current is 300 mA, the output voltage is 3 V, and the output of the proposed LDO regulator with the dynamic dual buffer structure has undershoot and overshoot voltages of 41 mV and 31 mV, respectively. That is, the output voltage of the proposed LDO regulator effectively provided and discharged an additional current suited for the undershoot/overshoot conditions to enhance the transient response characteristics. Furthermore, the electrostatic discharge (ESD) robustness characteristics of the proposed LDO regulator improved because of the silicon-controlled rectifier underlying the ESD protection device embedded in the output node and power line.
Publisher
MDPI AG
