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Pseudo-halide anion engineering for α-FAPbI3 perovskite solar cells
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Journal Article
Pseudo-halide anion engineering for α-FAPbI3 perovskite solar cells
2021
Overview
Metal halide perovskites of the general formula ABX
3
—where A is a monovalent cation such as caesium, methylammonium or formamidinium; B is divalent lead, tin or germanium; and X is a halide anion—have shown great potential as light harvesters for thin-film photovoltaics
1
–
5
. Among a large number of compositions investigated, the cubic α-phase of formamidinium lead triiodide (FAPbI
3
) has emerged as the most promising semiconductor for highly efficient and stable perovskite solar cells
6
–
9
, and maximizing the performance of this material in such devices is of vital importance for the perovskite research community. Here we introduce an anion engineering concept that uses the pseudo-halide anion formate (HCOO
−
) to suppress anion-vacancy defects that are present at grain boundaries and at the surface of the perovskite films and to augment the crystallinity of the films. The resulting solar cell devices attain a power conversion efficiency of 25.6 per cent (certified 25.2 per cent), have long-term operational stability (450 hours) and show intense electroluminescence with external quantum efficiencies of more than 10 per cent. Our findings provide a direct route to eliminate the most abundant and deleterious lattice defects present in metal halide perovskites, providing a facile access to solution-processable films with improved optoelectronic performance.
Incorporation of the pseudo-halide anion formate during the fabrication of α-FAPbI
3
perovskite films eliminates deleterious iodide vacancies, yielding solar cell devices with a certified power conversion efficiency of 25.21 per cent and long-term operational stability.
Publisher
Nature Publishing Group UK
