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Influence of Surface Preprocessing on 4H-SiC Wafer Slicing by Using Ultrafast Laser
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Influence of Surface Preprocessing on 4H-SiC Wafer Slicing by Using Ultrafast Laser
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Journal Article
Influence of Surface Preprocessing on 4H-SiC Wafer Slicing by Using Ultrafast Laser
2023
Overview
The physical properties of silicon carbide (SiC) are excellent as a third-generation semiconductor. Nevertheless, diamond wire cutting has many drawbacks, including high loss, long cutting time and prolonged processing time. The study of 4H-SiC wafer slicing by using an ultrafast laser is hopeful for solving these problems. In this work, the 4H-SiC samples with different surface roughness were processed by laser slicing. Findings revealed that good surface quality could reduce the damage to the wafer surface during laser slicing, reduce cleavage, and improve the flatness and uniformity of the modified layer. Thus, preprocessing on 4H-SiC can significantly improve the quality and efficiency of laser slicing.
Publisher
MDPI AG
Subject
