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Transport Measurements of Surface Electrons in 200-nm-Deep Helium-Filled Microchannels Above Amorphous Metallic Electrodes
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Transport Measurements of Surface Electrons in 200-nm-Deep Helium-Filled Microchannels Above Amorphous Metallic Electrodes
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Journal Article
Transport Measurements of Surface Electrons in 200-nm-Deep Helium-Filled Microchannels Above Amorphous Metallic Electrodes
2019
Overview
We report transport measurements of electrons on helium in a microchannel device where the channels are 200 nm deep and
3
μ
m
wide. The channels are fabricated above amorphous metallic
Ta
40
W
40
Si
20
, which has surface roughness below 1 nm and minimal variations in work function across the surface due to the absence of polycrystalline grains. We are able to set the electron density in the channels using a ground plane. We estimate a mobility of
300
cm
2
/
V
s
and electron densities as high as
2.56
×
10
9
cm
-
2
. We demonstrate control of the transport using a barrier which enables pinch-off at a central microchannel connecting two reservoirs. The conductance through the central microchannel is measured to be 10 nS for an electron density of
1.58
×
10
9
cm
-
2
. Our work extends transport measurements of surface electrons to thin helium films in microchannel devices above metallic substrates.
Publisher
Springer US,Springer Nature B.V,Plenum Press
Subject
