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Morphology evolution, growth mechanism and optical properties of AlN nanostructures
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Morphology evolution, growth mechanism and optical properties of AlN nanostructures
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Journal Article
Morphology evolution, growth mechanism and optical properties of AlN nanostructures
2013
Overview
In the present paper, we prepared various kinds of aluminium nitride (AlN) nanostructures utilizing chemical vapor deposition method at atmospheric pressure. Different nanostructures including flower, rod and film were obtained on bare silicon substrates by controlling the growth temperature between 650 and 800 °C. The formation mechanism of these nanostructures is related to vapor–solid process and Ehrlich–Schwoebel barrier. The crystalline phase and morphologies of the as-prepared AlN samples are investigated systematically. Their microstructures are observed by the scanning electron microscope. The X-ray diffraction results demonstrate that the AlN samples exhibit pure phase and grow preferentially along the
c
-axis. The Raman examination shows there is a strong stress at the interface between the AlN nanostructures and the silicon substrate. The photoluminescence properties indicate that AlN nanostructures possess a broad luminescence band, which can be divided into two subbands by Gaussian fitting, and they are ascribed to nitrogen vacancy as well as the oxygen impurity.
Publisher
Springer US,Springer,Springer Nature B.V
Subject
/ Characterization and Evaluation of Materials
/ Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
/ Chemistry and Materials Science
/ Condensed matter: electronic structure, electrical, magnetic, and optical properties
/ Condensed matter: structure, mechanical and thermal properties
/ Cross-disciplinary physics: materials science; rheology
/ Exact sciences and technology
/ Fittings
/ Methods of deposition of films and coatings; film growth and epitaxy
/ Optical and Electronic Materials
/ Physics
/ Scanning electron microscopy
/ Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
