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Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates
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Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates
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Journal Article
Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates
2020
Overview
Magnetron sputtering is adopted to deposit ~25 nm thick AlN on the surface of hexagonal BN(h-BN)/sapphire substrates, followed by epitaxial GaN growth on top of the AlN/h-BN/sapphire substrate using a metal–organic chemical vapor deposition system. Compared to GaN grown on the h-BN/sapphire surface directly, this method results in a continuous and smooth GaN film with a smaller root mean square roughness. Besides, the introduction of the sputtered AlN layer reduces the dislocation density of GaN by 35.7%. We provide a pathway of GaN epitaxy on the h-BN surface, which significantly improves its surface morphology and crystal quality.
Publisher
MDPI AG,MDPI
Subject
