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Design of four-state inverter using quantum dot gate-quantum dot channel field effect transistor
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Journal Article
Design of four-state inverter using quantum dot gate-quantum dot channel field effect transistor
2013
Overview
Quaternary logic can be implemented using quantum dot gate-quantum dot channel field effect transistors (QDG-QDCFETs) which produce four states in their transfer characteristics. A circuit model is used to simulate a four-state state inverter which is the basic building block of any multi-valued logic (MVL) circuit design. A basic problem of MVL implementation is the noise margin. The stable nature of the transfer characteristics of the QDG-QDCFET can make them a promising circuit element in future MVL circuit design. Comparison of fabricated device characteristics and the model data is shown.
Publisher
The Institution of Engineering and Technology,Institution of Engineering and Technology
Subject
/ Exact sciences and technology
/ fabricated device characteristics
/ Integrated circuits by function (including memories and processors)
/ Micro- and nanoelectromechanical devices (mems/nems)
/ multivalued logic circuit design
/ quantum dot gate‐quantum dot channel field effect transistor
/ Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
